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PINACHO GOMEZ, RUTH

PROFESORES TITULARES DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
rutpin@tel.uva.es

Índice H en Web of Science: 11
Índice H en Scopus: 10
 
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[][ PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE49981 , ARE , 2019-08-14 , REC , 16418 , 16422 , 21 , 30 , CIE , PUB , Rotational spectroscopy of organophosphorous chemical agents: cresyl and phenyl saligenin phosphates , PHYSICAL CHEMISTRY CHEMICAL PHYSICS , null , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE38483 , ARE , 2018-05-02 , REC , 6564 , 6571 , 24 , 0 , CIE , PUB , Sulfur Hydrogen Bonding in Isolated Monohydrates: Furfuryl Mercaptan versus Furfuryl Alcohol , CHEMISTRY-A EUROPEAN JOURNAL , Juanes M.; Lesarri A.; Pinacho R.; Charro E.; Rubio J.; Enriquez L.; Jaraiz M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7220 , ARE , 2017-07-21 , REC , 17553 , 17559 , 19 , 0 , CIE , PUB , Rotational spectra of tetracyclic quinolizidine alkaloids: does a water molecule flip sparteine? , PHYSICAL CHEMISTRY CHEMICAL PHYSICS , Lesarri A.; Pinacho R.; Enriquez L.; Rubio J.; Jaraiz M.; Abad J.; Gigosos M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7184 , ARE , 2017-04-07 , REC , 3760 , 3766 , 82 , 0 , CIE , PUB , A DFT-Based Computational-Experimental Methodology for Synthetic Chemistry: Example of Application to the Catalytic Opening of Epoxides by Titanocene , JOURNAL OF ORGANIC CHEMISTRY , Jaraiz M.; Enriquez L.; Pinacho R.; Rubio J.; Lesarri A.; Lopez-Perez J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7779 , ARE , 2011-05-15 , REC , 0 , 0 , 109 , 0 , CIE , PUB , Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation , JOURNAL OF APPLIED PHYSICS , Castrillo, P.; Pinacho, R.; Jaraiz, M.; Rubio, J. E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7786 , ARE , 2010-02-26 , REC , 2448 , 2453 , 518 , 0 , CIE , PUB , Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures , THIN SOLID FILMS , Castrillo, P.; Jaraiz, M.; Pinacho, R.; Rubio, J. E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7767 , ARE , 2008-12-05 , REC , 260 , 263 , 154 , 0 , CIE , PUB , The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy , MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , Castrillo, P.; Pinacho, R.; Jaraiz, M.; Rubioa, J. E.; Singer, J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7771 , ARE , 2008-01-01 , REC , 0 , 0 , 103 , 0 , CIE , PUB , Comprehensive model of damage accumulation in silicon , JOURNAL OF APPLIED PHYSICS , Mok, K. R. C.; Benistant, F.; Jaraiz, M.; Rubio, J. E.; Castrillo, P.; Pincacho, R. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE50503 , ARE , 2007-12-01 , REC , 951 , 954 , 0 , 0 , CIE , PUB , Current capabilities and future prospects of atomistic process simulation , TECHNICAL DIGEST: INTERNATIONAL ELECTRON DEVICES MEETING , Jaraiz M.; Castrillo P.; Pinacho R.; Rubio J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7783 , ARE , 2006-12-01 , REC , 63 , 67 , 253 , 0 , CIE , PUB , Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Martin-Bragado, Ignacio; Tian, S.; Johnson, M.; Castrillo, P.; Pinacho, R.; Rubio, J.; Jaraiz, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE50504 , ARE , 2006-11-21 , REC , 99 , 104 , 912 , 0 , CIE , PUB , Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth , ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS , Mok K.; Colombeau B.; Jaraiz M.; Castrillo P.; Rubio J.; Pinacho R.; Srinivasan M.; Benistant F.; Martin-Bragado I.; Hamilton J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7788 , ARE , 2006-01-01 , REC , 99 , 0 , 912 , 0 , CIE , PUB , Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk , DOPING ENGINEERING FOR DEVICE FABRICATION , Mok, K. R. C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J. E.; Pinacho, R.; Srinivasan, M. P.; Benistant, F.; Martin-Bragado, I.; Hamilton, J. J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7790 , ARE , 2005-12-05 , REC , 389 , 391 , 124 , 0 , CIE , PUB , Bimodal distribution of damage morphology generated by ion implantation , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Mok, KRC; Jaraiz, M; Martin-Bragado, I; Rubio, JE; Castrillo, P; Pinacho, R; Srinivasan, MP; Benistant, F , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7791 , ARE , 2005-12-05 , REC , 383 , 385 , 124 , 0 , CIE , PUB , Comprehensive modeling of ion-implant amorphization in silicon , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Mok, KRC; Jaraiz, M; Martin-Bragadoa, I; Rubio, JE; Castrillo, P; Pinacho, R; Srinivasan, MP; Benistant, F , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7773 , ARE , 2005-12-05 , REC , 392 , 396 , 124 , 0 , CIE , PUB , Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Rubio, JE; Jaraiz, M; Martin-Bragado, I; Castrillo, P; Pinacho, R; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE39684 , ARE , 2005-12-05 , REC , 386 , 388 , 124 , 0 , CIE , PUB , Ion-implant simulations: The effect of defect spatial correlation on damage accumulation , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Mok, KRC; Jaraiz, A; Martin-Bragado, I; Rubio, JE; Castrillo, P; Pinacho, R; Srinivasan, M; Benistant, F , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7772 , ARE , 2005-12-05 , REC , 404 , 408 , 124 , 0 , CIE , PUB , Physically based modeling of dislocation loops in ion implantation processing in silicon , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Castrillo, P; Martin-Bragado, I; Pinacho, R; Jaraiz, M; Rubio, JE; Mok, KRC; Miguel-Herrero, FJ; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7774 , ARE , 2005-09-01 , REC , 0 , 0 , 98 , 0 , CIE , PUB , Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators , JOURNAL OF APPLIED PHYSICS , Martin-Bragado, I; Castrillo, P; Jaraiz, M; Pinacho, R; Rubio, JE; Barbolla, J; Moroz, V , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7789 , ARE , 2005-08-15 , REC , 0 , 0 , 98 , 0 , CIE , PUB , Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population , JOURNAL OF APPLIED PHYSICS , Mok, KRC; Jaraiz, M; Martin-Bragado, I; Rubio, JE; Castrillo, P; Pinacho, R; Barbolla, J; Srinivasan, MP , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7781 , ARE , 2005-07-01 , REC , 0 , 0 , 72 , 0 , CIE , PUB , Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon , PHYSICAL REVIEW B , Martin-Bragado, I; Castrillo, P; Jaraiz, M; Pinacho, R; Rubio, JE; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7780 , ARE , 2005-06-20 , REC , 0 , 0 , 86 , 0 , CIE , PUB , Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach , APPLIED PHYSICS LETTERS , Pinacho, R; Jaraiz, M; Castrillo, P; Martin-Bragado, I; Rubio, JE; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7787 , ARE , 2004-12-15 , REC , 345 , 348 , 114 , 0 , CIE , PUB , A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Martin-Bragado, I; Jaraiz, M; Castrillo, P; Pinacho, R; Rubio, JE; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7782 , ARE , 2004-12-15 , REC , 135 , 140 , 114 , 0 , CIE , PUB , Comprehensive, physically based modelling of As in Si , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Pinacho, R; Jaraiz, M; Castrillo, P; Rubio, JE; Martin-Bragado, I; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE39685 , ARE , 2004-12-15 , REC , 284 , 289 , 114 , 0 , CIE , PUB , Physical modeling of Fermi-level effects for decanano device process simulations , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Martin-Bragado, I; Pinacho, R; Castrillo, P; Jaraiz, A; Rubio, JE; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7776 , ARE , 2004-12-15 , REC , 151 , 155 , 114 , 0 , CIE , PUB , Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Rubio, JE; Jaraiz, M; Martin-Bragado, I; Pinacho, R; Castrillo, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7785 , ARE , 2004-06-14 , REC , 4962 , 4964 , 84 , 0 , CIE , PUB , Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features , APPLIED PHYSICS LETTERS , Martin-Bragado, I; Jaraiz, M; Castrillo, P; Pinacho, R; Rubio, JE; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7769 , ARE , 2003-11-01 , REC , 0 , 0 , 68 , 0 , CIE , PUB , Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena , PHYSICAL REVIEW B , Martin-Bragado, I; Jaraiz, M; Castrillo, P; Pinacho, R; Barbolla, J; De Souza, MM , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7784 , ARE , 2002-08-01 , REC , 1582 , 1587 , 92 , 0 , CIE , PUB , Carbon in silicon: Modeling of diffusion and clustering mechanisms , JOURNAL OF APPLIED PHYSICS , Pinacho, R; Castrillo, P; Jaraiz, M; Martin-Bragado, I; Barbolla, J; Gossmann, HJ; Gilmer, GH; Benton, JL , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE39735 , ARE , 2000-07-10 , REC , 241 , 243 , 77 , 2 , CIE , PUB , Dominant iron gettering mechanism in p/p(+) silicon wafers , APPLIED PHYSICS LETTERS , Lin, W; Benton, JL; Pinacho, R; Ramappa, DA; Henley, W , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3844 , ARE , 1999-01-01 , REC , 7978 , 7980 , 85 , 11 , CIE , PUB , Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions , JOURNAL OF APPLIED PHYSICS , Quintanilla L.; Pinacho R.; Enriquez L.; Pelaez R.; Dueñas S.; Castan E.; Bailon L.; Barbolla J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3846 , ARE , 1999-01-01 , REC , 413 , 418 , 10 , 5-6 , CIE , PUB , Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Quintanilla Sierra, L.; Dueñas, S.; Castan, E.; Pinacho, R.; Peláez, R.; Barbolla, J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3847 , ARE , 1999-01-01 , REC , 373 , 377 , 10 , 5-6 , CIE , PUB , Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Dueñas, S.; Peláez, R.; Castán, E.; Pinacho, R.; Quintanilla Sierra, L.; Barbolla, J.; Martil, I.; Redondo, E.; González Díaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3843 , ARE , 1999-01-01 , REC , 4855 , 4860 , 86 , 9 , CIE , PUB , Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions , JOURNAL OF APPLIED PHYSICS , Quintanilla L.; Pinacho R.; Enriquez L.; Pelaez R.; Dueñas S.; Castan E.; Bailon L.; Barbolla J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3848 , ARE , 1998-01-01 , REC , 389 , 393 , 13 , 4 , CIE , PUB , Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Quintanilla, L.; Dueñas, S.; Castán, E.; Pinacho, R.; Peláez, R.; Barbolla, J.; Martín, J.M.; González Díaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3853 , ARE , 1997-01-01 , REC , 3143 , 3150 , 81 , 7 , CIE , PUB , Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP , JOURNAL OF APPLIED PHYSICS , Quintanilla Sierra, L.; Dueñas, S.; Castán, E.; Pinacho, R.; Barbolla, J.; Martín, J. M.; González Díaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3851 , ARE , 1997-01-01 , REC , 4338 , 4345 , 82 , 9 , CIE , PUB , Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs , JOURNAL OF APPLIED PHYSICS , Dueñas, S.; Pinacho, R.; Castán, E.; Quintanilla Sierra, L.; Peláez, R.; Barbolla, J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3852 , ARE , 1997-01-01 , REC , 826 , 828 , 71 , 6 , CIE , PUB , Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures , APPLIED PHYSICS LETTERS , Dueñas, S.; Peláez, R.; Castán, E.; Pinacho, R.; Quintanilla Sierra, L.; Barbolla, J.; Martil, I.; González Díaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3854 , ARE , 1997-01-01 , REC , 103 , 109 , 41 , 1 , CIE , PUB , Thermal emission processes of DX centres in AlxGa1-xAs:Si , SOLID-STATE ELECTRONICS , Enriquez L.; Dueñas S.; Castan E.; Quintanilla L.; Pinacho R.; Barbolla J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE5351 , ARE , 1996-01-01 , REC , 121 , 126 , 149 , 0 , CIE , PUB , Determination of three-dimensional deep level defect distribution by Capacitance-Voltage Transient Technique (CVTT , DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995 , Duenas, S; Pinacho, R; Quintanilla, L; Castan, E; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3855 , ARE , 1996-01-01 , REC , 310 , 315 , 79 , 1 , CIE , PUB , Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions , JOURNAL OF APPLIED PHYSICS , Quintanilla Sierra, L.; Dueñas, S.; Castán, E.; Pinacho, R.; Peláez, L.; Bailon, L.; Barbolla, J. , S ) ) ) ][ PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1933 , CAP , null , , 9 , 12 , , , , , Atomistic modeling of defect diffusion in SiGe , , Castrillo, P.; Pinacho, R.; Rubio, J. E.; Vega, L. M.; Jaraiz, M. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1934 , CAP , null , , 99 , 0 , , , , , Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk , , Mok, K. R. C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J. E.; Pinacho, R.; Srinivasan, M. P.; Benistant, F.; Martin-Bragado, I.; Hamilton, J. J. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1932 , CAP , null , , 951 , 954 , , , , , Current capabilities and future prospects of atomistic process simulation , , Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rubio, J. E. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1931 , CAP , null , , 10 , 17 , , , , , Atomistic front-end process modelling: A powerful tool for deep-submicron device fabrication , , Jaraiz, M; Castrillo, P; Pinacho, R; Martin-Bragado, I; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP14673 , CAP , null , , 121 , 126 , , , , , Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT) , , Duenas, S; Pinacho, R; Quintanilla, L; Castan, E; Barbolla, J , S ) ) ) ][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@64f6866f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@74f41531, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@449b7ff3][][][][][][][][][][ Proyecto ( ActivEquipo ( PJI60291 , PJI , PGC2018-098561-B-C22 , 2019-01-01 , 2021-12-31 , null , 62920 , S , ) ) , Proyecto ( ActivEquipo ( PJI60138 , PJI , VA119G18 , 2018-06-05 , 2020-09-30 , null , 12000 , S , ) ) , Proyecto ( ActivEquipo ( PJI53116 , PJI , CTQ2015-68148-C2-2-P , 2016-01-01 , 2018-12-31 , 2019-06-30 , 67518 , S , ) ) , Proyecto ( ActivEquipo ( PJI52329 , PJI , TEC2008-05301/TEC , 2009-01-01 , 2011-12-31 , null , 69575 , S , ) ) , Proyecto ( ActivEquipo ( PJI49371 , PJI , VA062A08 , 2008-01-01 , 2009-12-31 , null , 12900 , S , ) ) , Proyecto ( ActivEquipo ( PJI49126 , PJI , TEC2005-05101 , 2005-10-15 , 2008-12-31 , null , 152558 , S , ) ) , Proyecto ( ActivEquipo ( PJI48864 , PJI , VA070A05 , 2005-06-16 , 2007-12-31 , null , 27300 , S , ) ) , Proyecto ( ActivEquipo ( PJI47673 , PJI , UV19/03 , 2003-05-08 , 2004-11-20 , null , 3400 , S , ) ) , Proyecto ( ActivEquipo ( PJI47517 , PJI , VA010/02 , 2002-02-19 , 2004-11-20 , null , 19273 , S , ) ) , Proyecto ( ActivEquipo ( PJI47796 , PJI , BFM2001-2250 , 2001-12-28 , 2005-06-27 , null , 213058.77 , S , ) ) , Proyecto ( ActivEquipo ( PJI47496 , PJI , PB98-0348 , 1999-12-30 , 2001-12-30 , null , 134626.7 , S , ) ) , Proyecto ( ActivEquipo ( PJI53598 , PJI , PB95-0710 , 1996-11-01 , 1999-11-01 , null , 152056.06 , S , ) ) ][][][][]

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PUBLICACIONES

Artículos de revista (40)

. Rotational spectroscopy of organophosphorous chemical agents: cresyl and phenyl saligenin phosphates. PHYSICAL CHEMISTRY CHEMICAL PHYSICS 2019; 21(30): 16418-16422.
Enlace a la publicación
Juanes M.; Lesarri A.; Pinacho R.; Charro E.; Rubio J.; Enriquez L.; Jaraiz M. Sulfur Hydrogen Bonding in Isolated Monohydrates: Furfuryl Mercaptan versus Furfuryl Alcohol. Chemistry - A European Journal 2018; 24: 6564-6571.
Enlace a la publicación
Lesarri A.; Pinacho R.; Enriquez L.; Rubio J.; Jaraiz M.; Abad J.; Gigosos M. Rotational spectra of tetracyclic quinolizidine alkaloids: does a water molecule flip sparteine?. PHYSICAL CHEMISTRY CHEMICAL PHYSICS 2017; 19: 17553-17559.
Enlace a la publicación
Jaraiz M.; Enriquez L.; Pinacho R.; Rubio J.; Lesarri A.; Lopez-Perez J. A DFT-Based Computational-Experimental Methodology for Synthetic Chemistry: Example of Application to the Catalytic Opening of Epoxides by Titanocene. JOURNAL OF ORGANIC CHEMISTRY 2017; 82: 3760-3766.
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Capítulos de libros (5)

Castrillo, P.; Pinacho, R.; Rubio, J. E.; Vega, L. M.; Jaraiz, M. Atomistic modeling of defect diffusion in SiGe. En: Simulation of Semiconductor Processes and Devices 2007. 2007. p. 9-12.
Enlace a la publicación

Mok, K. R. C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J. E.; Pinacho, R.; Srinivasan, M. P.; Benistant, F.; Martin-Bragado, I.; Hamilton, J. J. Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk. En: Doping engineering for device fabrication. 2006.
Enlace a la publicación

Jaraiz, M.; Castrillo, P.; Pinacho, R.; Rubio, J. E. Current capabilities and future prospects of atomistic process simulation. En: 2007 IEEE International Electron Devices Meeting. 2003. p. 951-954.
Enlace a la publicación

Jaraiz, M; Castrillo, P; Pinacho, R; Martin-Bragado, I; Barbolla, J. Atomistic front-end process modelling: A powerful tool for deep-submicron device fabrication. En: Simulation of Semiconductor Processes and Devices 2001. 2001. p. 10-17.
Enlace a la publicación

Duenas, S; Pinacho, R; Quintanilla, L; Castan, E; Barbolla, J. Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT). En: Defect Recognition and Image Processing in Semiconductors 1995. 1996. p. 121-126.
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AYUDA A LA INVESTIGACIÓN

Proyectos (12)

ESPECTROSCOPÍA Y DINÁMICA EN EXPANSIONES SUPERSÓNICAS: INTERACCIONES NO COVALENTES EN MOLÉCULAS BIOLÓGICAS Y PREBIÓTICAS. JARAIZ MALDONADO, MARTIN (IP); LESARRI GOMEZ, ALBERTO EUGENIO (IP); ENRIQUEZ GIRAUDO, MARIA LOURDES; PINACHO GOMEZ, RUTH; RUBIO GARCIA, JOSE EMILIANO. PGC2018-098561-B-C22. FONDOS FEDERAGENCIA ESTATAL DE INVESTIGACIÓN 2019-2021
ESTUDIO DE PROCESOS TECNOLÓGICOS AVANZADOS PARA LA FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS NANOMÉTRICOS MEDIANTE TÉCNICAS DE SIMULACIÓN PREDICTIVA. MARQUES CUESTA, LUIS ALBERTO (IP); SANTOS TEJIDO, IVAN; HERNANDEZ MANGAS, JESUS MANUEL; ARIAS ALVAREZ, JESUS; RUBIO GARCIA, JOSE EMILIANO; VICENTE ANTON, JOSE; RUIZ PRIETO, MANUEL; ENRIQUEZ GIRAUDO, MARIA LOURDES; PELAZ MONTES, MARIA LOURDES; ABOY CEBRIAN, MARIA; LOPEZ MARTIN, PEDRO; PINACHO GOMEZ, RUTH. VA119G18. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2018-2020
AUTOAGREGACION MOLECULAR: ESPECTROSCOPIA Y DINAMICA DE COMPLEJOS DEBILMENTE ENLAZADOS.. LESARRI GOMEZ, ALBERTO EUGENIO (IP); RUBIO GARCIA, JOSE EMILIANO; ENRIQUEZ GIRAUDO, MARIA LOURDES; JARAIZ MALDONADO, MARTIN; PINACHO GOMEZ, RUTH. CTQ2015-68148-C2-2-P. MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD FONDOS FEDER 2016-2019
MODELOS AVANZADOS DE SIMULACIÓN DE LOS EFECTOS DE LA TENSIÓN MECÁNICA EN LOS PROCESOS DE FABRICACIÓN DE DISPOSITIVOS DE ÚLTIMA GENERACIÓN BASADOS EN SI. CASTRILLO ROMON, PEDRO (IP); RUBIO GARCIA, JOSE EMILIANO; JARAIZ MALDONADO, MARTIN; PINACHO GOMEZ, RUTH. TEC2008-05301/TEC. MICINN SECRETARÍA DE ESTADO DE UNIVERSIDADES 2009-2011
DESARROLLO DE HERRAMIENTAS DE SIMULACIÓN ATOMÍSTICA PARA LA FABRICACIÓN DE DISPOSITIVOS MOSFET DE SIGE Y SI TENSADO. CASTRILLO ROMON, PEDRO (IP); RUBIO GARCIA, JOSE EMILIANO; JARAIZ MALDONADO, MARTIN; PINACHO GOMEZ, RUTH. VA062A08. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2008-2009
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OTROS

Congresos (3)

Technical Digest - International Electron Devices Meeting, IEDM, 10/12/2007 - 12/12/2007
(Ponencia). Jaraiz M.; Castrillo P.; Pinacho R.; Rubio J. Technical Digest - International Electron Devices Meeting, IEDM
Physical Chemistry Chemical Physics, 01/01/2007
(Ponencia). Marques L.; Pelaz L.; Santos I.; Lopez P.; Aboy M. 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Materials Research Society Symposium Proceedings, 18/04/2006 - 19/04/2006
(Ponencia). Mok K.; Colombeau B.; Jaraiz M.; Castrillo P.; Rubio J.; Pinacho R.; Srinivasan M.; Benistant F.; Martin-Bragado I.; Hamilton J. Materials Research Society Symposium Proceedings
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