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PINACHO GOMEZ, RUTH

PROFESORES TITULARES DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
rutpin@tel.uva.es
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Índice H en Web of Science: 11
Índice H en Scopus: 10
 
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[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57051]], camposKey:1463-9076 2020-01-01 Sulfur hydrogen bonding and internal dynamics in the monohydrates of thenyl mercaptan and thenyl alcohol1241212421, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50500]], camposKey:2155-5435 2019-01-01 An Efficient Microkinetic Modeling Protocol: Start with Only the Dominant Mechanisms, Adjust All Parameters, and Build the Complete Model Incrementally48044809, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=49981]], camposKey:1463-9076 2019-01-01 Rotational spectroscopy of organophosphorous chemical agents: cresyl and phenyl saligenin phosphates1641816422, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=38483]], camposKey:0947-6539 2018-01-01 Sulfur Hydrogen Bonding in Isolated Monohydrates: Furfuryl Mercaptan versus Furfuryl Alcohol65646571, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7184]], camposKey:0022-3263 2017-04-07 A DFT-Based Computational-Experimental Methodology for Synthetic Chemistry: Example of Application to the Catalytic Opening of Epoxides by Titanocene37603766, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7220]], camposKey:1463-9076 2017-01-01 Rotational spectra of tetracyclic quinolizidine alkaloids: does a water molecule flip sparteine?1755317559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7779]], camposKey:0021-8979 2011-05-15 Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7786]], camposKey:0040-6090 2010-02-26 Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures24482453, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7767]], camposKey:0921-5107 2008-12-05 The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy260263, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7771]], camposKey:0021-8979 2008-01-01 Comprehensive model of damage accumulation in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50503]], camposKey:0163-1918 2007-12-01 Current capabilities and future prospects of atomistic process simulation951954, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7783]], camposKey:0168-583X 2006-12-01 Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo6367, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7788]], camposKey:0272-9172 2006-01-01 Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk99104, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7790]], camposKey:0921-5107 2005-12-05 Bimodal distribution of damage morphology generated by ion implantation389391, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7791]], camposKey:0921-5107 2005-12-05 Comprehensive modeling of ion-implant amorphization in silicon383385, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7773]], camposKey:0921-5107 2005-12-05 Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations392396, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39684]], camposKey:0921-5107 2005-12-05 Ion-implant simulations: The effect of defect spatial correlation on damage accumulation386388, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7772]], camposKey:0921-5107 2005-12-05 Physically based modeling of dislocation loops in ion implantation processing in silicon404408, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7774]], camposKey:0021-8979 2005-09-01 Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7789]], camposKey:0021-8979 2005-08-15 Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7781]], camposKey:1098-0121 2005-07-01 Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7780]], camposKey:0003-6951 2005-06-20 Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7787]], camposKey:0921-5107 2004-12-15 A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations345348, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7782]], camposKey:0921-5107 2004-12-15 Comprehensive, physically based modelling of As in Si135140, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39685]], camposKey:0921-5107 2004-12-15 Physical modeling of Fermi-level effects for decanano device process simulations284289, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7776]], camposKey:0921-5107 2004-12-15 Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation151155, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7785]], camposKey:0003-6951 2004-06-14 Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features49624964, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7769]], camposKey:1098-0121 2003-11-01 Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7784]], camposKey:0021-8979 2002-08-01 Carbon in silicon: Modeling of diffusion and clustering mechanisms15821587, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52956]], camposKey:0272-9172 2000-12-01 Atomistic modeling of complex silicon processing scenarios00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52955]], camposKey:0272-9172 2000-12-01 The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39735]], camposKey:0003-6951 2000-07-10 Dominant iron gettering mechanism in p/p(+) silicon wafers241243, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3844]], camposKey:0021-8979 1999-01-01 Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions79787980, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3846]], camposKey:0957-4522 1999-01-01 Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions413418, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3847]], camposKey:0957-4522 1999-01-01 Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication373377, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3843]], camposKey:0021-8979 1999-01-01 Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions48554860, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3848]], camposKey:0268-1242 1998-01-01 Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions389393, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3853]], camposKey:0021-8979 1997-01-01 Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP31433150, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3851]], camposKey:0021-8979 1997-01-01 Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs43384345, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3852]], camposKey:0003-6951 1997-01-01 Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures826828, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3854]], camposKey:0038-1101 1997-01-01 Thermal emission processes of DX centres in AlxGa1-xAs:Si103109, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3855]], camposKey:0021-8979 1996-01-01 Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions310315][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1933]},camposKey: 9 12 Atomistic modeling of defect diffusion in SiGe Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1934]},camposKey: 99 0 Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk Doping engineering for device fabrication 1 2006-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1932]},camposKey: 951 954 Current capabilities and future prospects of atomistic process simulation 2007 IEEE International Electron Devices Meeting 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1931]},camposKey: 10 17 Atomistic front-end process modelling: A powerful tool for deep-submicron device fabrication Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14673]},camposKey: 121 126 Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT) Defect Recognition and Image Processing in Semiconductors 1995: Proceedings of the Sixth International Conference held in Boulder, Colorado, 3-6 December 1995 1 1996-01-01 Taylor & Francis][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6312defb, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6bed638d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2e22f556, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7918f8c3][][][][][][][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@46016e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f821], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412fd3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412445], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460629], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4604c5], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411e1e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411cf2], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f463], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8]][][][][]

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Artículos de revista (42)

Juanes, M.; Saragi, R.T.; Pinacho, R.; Rubio, J.E.; Lesarri, A. Sulfur hydrogen bonding and internal dynamics in the monohydrates of thenyl mercaptan and thenyl alcohol. PHYSICAL CHEMISTRY CHEMICAL PHYSICS 2020; 22(12): 12412-12421.
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Capítulos de libros (5)

Castrillo, P.; Pinacho, R.; Rubio, J. E.; Vega, L. M.; Jaraiz, M. Atomistic modeling of defect diffusion in SiGe. En: Tibor Grasser; [et al.]. Simulation of Semiconductor Processes and Devices. SISPAD 2007. Springer; 2007. p. 9-12.
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Proyectos (13)

ESPECTROSCOPÍA Y DINÁMICA EN EXPANSIONES SUPERSÓNICAS: INTERACCIONES NO COVALENTES EN MOLÉCULAS BIOLÓGICAS Y PREBIÓTICAS. JARAIZ MALDONADO, MARTIN (IP); LESARRI GOMEZ, ALBERTO EUGENIO (IP); RUBIO GARCIA, JOSE EMILIANO; ENRIQUEZ GIRAUDO, MARIA LOURDES; PINACHO GOMEZ, RUTH. PGC2018-098561-B-C22. AGENCIA ESTATAL DE INVESTIGACIÓN, FONDOS FEDER, UNIVERSIDAD DE VALLADOLID (UVa) 2019-2021
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Congresos (4)

Technical Digest - International Electron Devices Meeting, IEDM, 10/12/2007 - 12/12/2007
(Ponencia). Jaraiz M.; Castrillo P.; Pinacho R.; Rubio J. Technical Digest - International Electron Devices Meeting, IEDM
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