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com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7754]], camposKey:1369-8001 1999-12-01 Cluster ripening and transient enhanced diffusion in silicon369376, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52957]], camposKey:0163-1918 1999-12-01 Fundamental diffusion issues for deep-submicron device processing333336, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7744]], camposKey:0003-6951 1999-08-02 Activation and deactivation of implanted B in Si662664, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7742]], camposKey:0003-6951 1999-06-14 B cluster formation and dissolution in Si: A scenario based on atomistic modeling36573659, 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simulations of ion bombardment processes893896, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7749]], camposKey:0021-8979 1997-05-01 Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon60316050, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7748]], camposKey:0003-6951 1997-04-28 B diffusion and clustering in ion implanted Si: The role of B cluster precursors22852287, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=571]], camposKey:0021-8979 1997-02-01 Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation14881494, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7750]], camposKey:0272-9172 1997-01-01 Atomistic model of transient enhanced diffusion and clustering of boron in silicon341346, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7729]], camposKey:0003-6951 1996-04-22 Simulation of cluster evaporation and transient enhanced diffusion in silicon23952397, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7730]], camposKey:0921-5107 1996-02-01 Simulations of thin film deposition from atomic and cluster beams17, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7732]], camposKey:0003-6951 1996-01-15 Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena409411, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7741]], camposKey:0272-9172 1996-01-01 Atomic scale simulations of arsenic ion implantation and annealing in silicon4550, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=591]], camposKey:0168-583X 1996-01-01 Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions156159, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52958]], camposKey:0163-1918 1995-12-01 Ion implantation and transient enhanced diffusion7780, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=587]], camposKey:0267-0836 1995-11-01 Detailed computer simulation of ion implantation processes into crystals11911193, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7728]], camposKey:0168-583X 1995-08-01 DEFECTS FROM IMPLANTATION IN SILICON BY LINKED MARLOWE-MOLECULAR DYNAMICS CALCULATIONS180182, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7731]], camposKey:0168-583X 1995-08-01 DIFFUSION AND INTERACTIONS OF POINT-DEFECTS IN SILICON - MOLECULAR-DYNAMICS SIMULATIONS247255, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7739]], camposKey:0168-583X 1995-08-01 POINT-DEFECT ACCUMULATION IN SILICON IRRADIATED BY ENERGETIC PARTICLES - A MOLECULAR-DYNAMICS SIMULATION207210, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=568]], camposKey:0168-583X 1995-01-01 An improved molecular dynamics scheme for ion bombardment simulations711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52959]], camposKey:0168-583X 1995-01-01 Defects from implantation in silicon by linked Marlow-molecular dynamics calculations180182, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7759]], camposKey:0168-583X 1995-01-01 Low energy ion implantation simulation using a modified binary collision approximation code228231, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=570]], camposKey:0168-583X 1995-01-01 Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions301304, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7761]], camposKey:0272-9172 1994-01-01 On the forward conduction mechanisms in SiC P-N junctions151156, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7737]], camposKey:0042-207X 1993-03-01 DETAILED COMPUTER-SIMULATION OF DAMAGE ACCUMULATION IN ION IRRADIATED CRYSTALLINE TARGETS321323, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7758]], camposKey:0168-583X 1993-01-01 Computer simulation of point-defect distributions generated by ion implantation172175, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7734]], camposKey:0021-8979 1992-05-15 INTERWELL ENHANCEMENT OF THE PHOTOLUMINESCENCE EFFICIENCY IN GAAS/ALGAAS QUANTUM-WELLS51365139, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7763]], camposKey:0021-8979 1991-01-01 Optical capture cross sections of palladium in silicon298301, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7736]], camposKey:0013-4651 1986-09-01 A NON-FICKIAN MODEL OF THE BORON IN SILICON DIFFUSION FROM BN SOURCES18951900, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6957]], camposKey:0038-1101 1986-01-01 Electron thermal emission rates of nickel centers in silicon883884, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23310]], camposKey:0210-2064 1986-01-01 Transporte magnético de sólidos103111][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1919]},camposKey: 229 0 Atomistic Simulation and Subsequent Optimization of Boron USJ Using Pre-Amorphization and High Ramp Rates Annealing 978-1-60511-040-0Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1926]},camposKey: 209 0 The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study 978-0-7354-0597-4- 1 2008-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1927]},camposKey: 338 0 Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D 978-1-4244-1123-8- 1 2007-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1933]},camposKey: 9 12 Atomistic modeling of defect diffusion in SiGe 978-3-211-72860-4Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1930]},camposKey: 334 0 From point defects to dislocation loops: a comprehensive TCAD model for self-interstitial defects in silicon 978-1-4244-1123-8- 1 2007-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1918]},camposKey: 145 0 Coupling advanced atomistic process and device modeling for optimizing future CMOS devices 142440181XVLSI 1 2006-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1916]},camposKey: 116 0 Design and optimization of nanoCMOS devices using predictive atomistic physicsbased process modeling 978-1-4244-0438-4- 1 2006-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1934]},camposKey: 99 0 Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk 978-1-55899-868-1Doping engineering for device fabrication 1 2006-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1932]},camposKey: 951 954 Current capabilities and future prospects of atomistic process simulation 978-1-4244-1507-62007 IEEE International Electron Devices Meeting 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1915]},camposKey: 87 90 Integrated atomistic process and device simulation of decananometre MOSFETs 4891140275Simulation of Semiconductor Processes and Devices 1 2002-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1920]},camposKey: 247 250 Introducing Monte Carlo diffusion simulation into TCAD tools 0970827563Technical proceddings of the second International Conference on Computational Nanoscience and Nanotechnology 1 2002-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1931]},camposKey: 10 17 Atomistic front-end process modelling: A powerful tool for deep-submicron device fabrication 978-3-7091-7278-0 Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1924]},camposKey: 163 168 Ostwald ripening of {113} defects precursors and transient enhanced diffusion 1-55899-475-0- 1 1999-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1929]},camposKey: 43 53 Atomistic modeling of point and extended defects in crystalline materials 978-1-55899-438-6Silicon Front-End Technology 1 1998-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1922]},camposKey: 127 132 Monte Carlo atomistic simulation of polycrystalline aluminum deposition 1-55899-420-3- 1 1998-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1925]},camposKey: 341 346 Atomistic model of transient enhanced diffusion and clustering of boron in silicon 978-1-55899-373-0Defects and Diffusion in Silicon Processing 1 1997-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1923]},camposKey: 45 50 Atomic scale simulations of arsenic ion implantation and annealing in silicon 978-1-55899-299-3Ion-Solid Interactions for Materials Modification and Processing 1 1996-01-01 MRS. 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