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JARAIZ MALDONADO, MARTIN

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
GRUPO DE ESPECTROSCOPÍA DE PLASMAS Y CHORROS SUPERSÓNICOS
 
mjaraiz@ele.uva.es
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Índice H en Web of Science: 20
Índice H en Scopus: 22
 
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[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52950]], camposKey:2041-6520 2020-02-28 Rational selection of co-catalysts for the deaminative hydrogenation of amides22252230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50505]], camposKey:0022-3263 2019-11-01 Mimicking Halimane Synthases: Monitoring a Cascade of Cyclizations and Rearrangements from Epoxypolyprenes1376413779, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52951]], camposKey:0268-2605 2019-07-01 Reduction of furfural by Mn/2,4,6-Coll.HCl/H2O: Mechanistic aspects of this reaction00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50500]], camposKey:2155-5435 2019-01-01 An Efficient Microkinetic Modeling Protocol: Start with Only the Dominant Mechanisms, Adjust All Parameters, and Build the Complete Model Incrementally48044809, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=49985]], camposKey:1089-5639 2019-01-01 Rotational Spectrum, Tunneling Motions, and Intramolecular Potential Barriers in Benzyl Mercaptan84358440, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52952]], camposKey:0079-6425 2018-01-01 Kinetic Monte Carlo simulation for semiconductor processing: A review132, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=38483]], camposKey:0947-6539 2018-01-01 Sulfur Hydrogen Bonding in Isolated Monohydrates: Furfuryl Mercaptan versus Furfuryl Alcohol65646571, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50501]], camposKey:0022-3263 2018-01-01 15-Hydroxygermacranolides as Sources of Structural Diversity: Synthesis of Sesquiterpene Lactones by Cyclization and Rearrangement Reactions. 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Atomistic model of transient enhanced diffusion and clustering of boron in silicon341346, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7729]], camposKey:0003-6951 1996-04-22 Simulation of cluster evaporation and transient enhanced diffusion in silicon23952397, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7730]], camposKey:0921-5107 1996-02-01 Simulations of thin film deposition from atomic and cluster beams17, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7732]], camposKey:0003-6951 1996-01-15 Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena409411, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7741]], camposKey:0272-9172 1996-01-01 Atomic scale simulations of arsenic ion implantation and annealing in silicon4550, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=591]], camposKey:0168-583X 1996-01-01 Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions156159, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52958]], camposKey:0163-1918 1995-12-01 Ion implantation and transient enhanced diffusion7780, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=587]], camposKey:0267-0836 1995-11-01 Detailed computer simulation of ion implantation processes into crystals11911193, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7728]], camposKey:0168-583X 1995-08-01 DEFECTS FROM IMPLANTATION IN SILICON BY LINKED MARLOWE-MOLECULAR DYNAMICS CALCULATIONS180182, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7731]], camposKey:0168-583X 1995-08-01 DIFFUSION AND INTERACTIONS OF POINT-DEFECTS IN SILICON - MOLECULAR-DYNAMICS SIMULATIONS247255, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7739]], camposKey:0168-583X 1995-08-01 POINT-DEFECT ACCUMULATION IN SILICON IRRADIATED BY ENERGETIC PARTICLES - A MOLECULAR-DYNAMICS SIMULATION207210, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=568]], camposKey:0168-583X 1995-01-01 An improved molecular dynamics scheme for ion bombardment simulations711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52959]], camposKey:0168-583X 1995-01-01 Defects from implantation in silicon by linked Marlow-molecular dynamics calculations180182, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7759]], camposKey:0168-583X 1995-01-01 Low energy ion implantation simulation using a modified binary collision approximation code228231, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=570]], camposKey:0168-583X 1995-01-01 Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions301304, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7761]], camposKey:0272-9172 1994-01-01 On the forward conduction mechanisms in SiC P-N junctions151156, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7737]], camposKey:0042-207X 1993-03-01 DETAILED COMPUTER-SIMULATION OF DAMAGE ACCUMULATION IN ION IRRADIATED CRYSTALLINE TARGETS321323, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7758]], camposKey:0168-583X 1993-01-01 Computer simulation of point-defect distributions generated by ion implantation172175, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7734]], camposKey:0021-8979 1992-05-15 INTERWELL ENHANCEMENT OF THE PHOTOLUMINESCENCE EFFICIENCY IN GAAS/ALGAAS QUANTUM-WELLS51365139, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7763]], camposKey:0021-8979 1991-01-01 Optical capture cross sections of palladium in silicon298301, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7736]], camposKey:0013-4651 1986-09-01 A NON-FICKIAN MODEL OF THE BORON IN SILICON DIFFUSION FROM BN SOURCES18951900, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6957]], camposKey:0038-1101 1986-01-01 Electron thermal emission rates of nickel centers in silicon883884, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23310]], camposKey:0210-2064 1986-01-01 Transporte magnético de sólidos103111][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1919]},camposKey: 229 0 Atomistic Simulation and Subsequent Optimization of Boron USJ Using Pre-Amorphization and High Ramp Rates Annealing Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1926]},camposKey: 209 0 The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study - 1 2008-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1927]},camposKey: 338 0 Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D - 1 2007-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1933]},camposKey: 9 12 Atomistic modeling of defect diffusion in SiGe Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1930]},camposKey: 334 0 From point defects to dislocation loops: a comprehensive TCAD model for self-interstitial defects in silicon - 1 2007-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1918]},camposKey: 145 0 Coupling advanced atomistic process and device modeling for optimizing future CMOS devices VLSI 1 2006-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1916]},camposKey: 116 0 Design and optimization of nanoCMOS devices using predictive atomistic physicsbased process modeling - 1 2006-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1934]},camposKey: 99 0 Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk Doping engineering for device fabrication 1 2006-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1932]},camposKey: 951 954 Current capabilities and future prospects of atomistic process simulation 2007 IEEE International Electron Devices Meeting 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1915]},camposKey: 87 90 Integrated atomistic process and device simulation of decananometre MOSFETs Simulation of Semiconductor Processes and Devices 1 2002-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1920]},camposKey: 247 250 Introducing Monte Carlo diffusion simulation into TCAD tools Technical proceddings of the second International Conference on Computational Nanoscience and Nanotechnology 1 2002-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1931]},camposKey: 10 17 Atomistic front-end process modelling: A powerful tool for deep-submicron device fabrication Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1924]},camposKey: 163 168 Ostwald ripening of {113} defects precursors and transient enhanced diffusion - 1 1999-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1929]},camposKey: 43 53 Atomistic modeling of point and extended defects in crystalline materials Silicon Front-End Technology 1 1998-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1922]},camposKey: 127 132 Monte Carlo atomistic simulation of polycrystalline aluminum deposition - 1 1998-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1925]},camposKey: 341 346 Atomistic model of transient enhanced diffusion and clustering of boron in silicon Defects and Diffusion in Silicon Processing 1 1997-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1923]},camposKey: 45 50 Atomic scale simulations of arsenic ion implantation and annealing in silicon Ion-Solid Interactions for Materials Modification and Processing 1 1996-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1917]},camposKey: 77 80 Ion implantation and transient enhanced diffusion Technical Digest on Electron Devices 1 1995-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1928]},camposKey: 151 156 On the Forward Conduction Mechanisms in SiC P-N Junctions Diamond, Sic and Nitride Wide Bandgap Semiconductors: Symposium Held April 4-8, 1994, San Francisco, California, U.S.A. 1 1994-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1921]},camposKey: 79 82 EFFECTS OF NEAR-INTERFACE DEFECTS ON THE OPTICAL-PROPERTIES OF MBE GROWN GAAS/ALGAAS LAYERS Crucial Issues in Semiconductor Materials and Processing Technologies 1 1992-10-31 -][][][][][][][][][][com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145628713]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145627020]]][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@43109792, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@764f14a3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@41d41603, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4af140b8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@24d01678, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@59733329, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1a23f6a0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2f148fc8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6eebab9d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3250094f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@24933b57, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3e1cdf83, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@59963150, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@137fa923, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@223942d5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5d52bf80, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@639a9c5d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3b8fd0c1, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5ed24d73, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@40dae9a7, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6421f434, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7127b547][][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca632, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca62e, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca62b, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca631, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca62d, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca62a, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca62f, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3ca633][][][][][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@46016e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e5c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f821], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412fd3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412445], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413f6a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411cf2], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f464], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f436], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f346], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134dc]][][][][]

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Artus Suarez L.; Jayarathne U.; Balcells D.; Bernskoetter W.H.; Hazari N.; Jaraiz M.; Nova A. Rational selection of co-catalysts for the deaminative hydrogenation of amides . Chemical Science 2020; 11(8): 2225-223.
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Singer, Julien; Wacquant, Francois; Villanueva, Davy; Salvetti, Frederic; Laviron, Cyrille; Cueto, Olga; Rivallin, Pierrette; Jaraiz, Martin; Poncet, Alain. Atomistic Simulation and Subsequent Optimization of Boron USJ Using Pre-Amorphization and High Ramp Rates Annealing . En: B. J. Pawlak; [et al.]. Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A.. Materials Research Society; 2008. p. 229-0.
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ESPECTROSCOPÍA Y DINÁMICA EN EXPANSIONES SUPERSÓNICAS: INTERACCIONES NO COVALENTES EN MOLÉCULAS BIOLÓGICAS Y PREBIÓTICAS. JARAIZ MALDONADO, MARTIN (IP); LESARRI GOMEZ, ALBERTO EUGENIO (IP); RUBIO GARCIA, JOSE EMILIANO; ENRIQUEZ GIRAUDO, MARIA LOURDES; PINACHO GOMEZ, RUTH. PGC2018-098561-B-C22. AGENCIA ESTATAL DE INVESTIGACIÓN, FONDOS FEDER, UNIVERSIDAD DE VALLADOLID (UVa) 2019-2021
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DIFFUSION OF ATOMISTIC DEFECTS OBJECT-ORIENTED SIMULATOR. JARAIZ MALDONADO, MARTIN (IP). FREESCALE SEMICONDUCTOR INC, FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID FREESCALE SEMICONDUCTOR INC. 2006
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MARTIN BRAGADO, IGNACIO SIMULACIÓN ATOMÍSTICA DE PROCESOS PARA MICROELECTRÓNICA. Universidad de Valladolid; 2004.
 
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AIP Conference Proceedings, Monterey 08/06/2008 - 13/06/2008
(Ponencia). Sekowski M.; Burenkov A.; Hernandez-Mangas J.; Martinez-Limia A.; Ryssel H. AIP Conference Proceedings
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