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DUEÑAS CARAZO, SALVADOR

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
GRUPO DE CARACTERIZACIÓN DE MATERIALES Y DISPOSITIVOS ELECTRÓNICOS ( ELECTRONIC MATERIALS AND DEVICES CHARACTERIZATION GROUP, GCME)
 
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Índice H en Web of Science: 17
Índice H en Scopus: 18
 
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[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55351]], camposKey:0957-4484 2020-02-25 Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55346]], camposKey:1938-6737 2020-01-01 Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications1720, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55347]], camposKey:1938-6737 2020-01-01 Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films36, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52709]], camposKey:0167-9317 2019-01-01 Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52710]], camposKey:0167-9317 2019-01-01 Controlling the intermediate conductance states in RRAM devices for synaptic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52708]], camposKey:0167-9317 2019-01-01 Dynamics of set and reset processes on resistive switching memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40934]], camposKey:0040-6090 2019-01-01 Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates294300, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52711]], camposKey:0021-8979 2018-01-01 Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11939]], camposKey:2190-4286 2018-01-01 Atomic layer deposition and properties of ZrO2/Fe2O3 thin films119128, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40100]], camposKey:0361-5235 2018-01-01 Electrical Characterization of Defects Created by gamma-Radiation in HfO2-Based MIS Structures for RRAM Applications50135018, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40101]], camposKey:0361-5235 2018-01-01 Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals49934997, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40099]], camposKey:2162-8769 2018-01-01 Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11079]], camposKey:0361-5235 2018-01-01 The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal Insulator Metal (MIM) Devices for Memory Applications49384943, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3787]], camposKey:0167-9317 2017-06-25 A physically based model for resistive memories including a detailed temperature and variability description2629, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39977]], camposKey:2163-4971 2017-01-01 A Physically Based Model to describe Resistive Switching in different RRAM technologies00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39976]], camposKey:2163-4971 2017-01-01 Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3785]], camposKey:0741-3106 2017-01-01 Experimental observation of negative susceptance in HfO2-based RRAM devices12161219, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3786]], camposKey:0167-9317 2017-01-01 Study of the admittance hysteresis cycles in 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observations of temperature-dependent flat band voltage transients on high-k dielectrics653656, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3821]], camposKey:0021-8979 2006-11-23 Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3822]], camposKey:0021-8979 2006-03-01 Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8947]], camposKey:1568-2609 2006-01-01 Disordered structure and density of gap states in high-permittivity thin solid films1230, 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IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2065]},camposKey: 49 52 Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1860]},camposKey: 83 87 Conductance transient comparative analysis of ECR-PECVD deposited SiNx,SiO2/SiNx and SiOxN gamma dielectric films on silicon substrates Fundamentals of novel oxide/semiconductor interfaces 1 2004-03-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1863]},camposKey: 147 152 On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2,Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films Fundamentals of novel oxide/semiconductor interfaces 1 2004-03-01 -, 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PUBLICACIONES

Artículos de revista (127)

Kukli K.; Kemell M.; Heikkil M.J.; Castan H.; Dueñas S.; Mizohata K.; Ritala M.; Leskel M. Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane . Nanotechnology 2020; 31(19).
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Libros (1)

García, Héctor; Ossorio, Óscar G.; Dueñas, Salvador; Castán, Helena. Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices. IEEE; 2020.
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Capítulos de libros (24)

Pérez, E.; García, H.; Castán, H.; Dueñas, S.; Bailon, L.; Moralejo, B.; Martínez, O.; Jiménez, J.; Parra, V. Deep level defects on mono-like and polycrystalline silicon solar cells. En: IEEE Communications Society; Vehicular Technology Society. 2012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia. Piscataway; 2013. p. 313-316.
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Proyectos (14)

FABRICACIÓN, CARACTERIZACIÓN, SIMULACIÓN, MODELADO Y APLICACIONES DE DISPOSITIVOS DE CONMUTACIÓN RESISTIVA.. CASTAN LANASPA, MARIA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP); GARCIA GARCIA, HECTOR; SAHELICES FERNANDEZ, BENJAMIN. TEC2017-84321-C4-2-R. FONDOS FEDER, MINISTERIO DE ECONOMIA Y COMPETITIVIDAD , UNIVERSIDAD DE VALLADOLID (UVa) 2018-2021
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Convenios (3)

CONVENIO ESPECIFIFICO ENTRE LA UNIVERSIDAD DE VALLADOLID Y TELEFONICA EN EL MARCO DE COLABORACION PARA EL DESARROLLO DE INICIATIVAS CONJUNTAS. ADDENDUM II. DUEÑAS CARAZO, SALVADOR (IP). TELEFÓNICA, S.A., UNIVERSIDAD DE VALLADOLID TELEFÓNICA, S.A.. 2013
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OTROS

Tesis doctorales (4)

CABEZA RODRIGUEZ, MIGUEL ÁNGEL A DEPENDABILITY MINDED APPROACH TO VIDEO RECORDING BY MEANS OF VIRTUALIZATION. Universidad de Valladolid; 2017.
 
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Congresos (23)

ECS Transactions, Montreal 10/05/2020 - 14/05/2020
(Ponencia). Garcia H.; Ossorio O.G.; Dueñas S.; Castan H. ECS Transactions
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Patentes (1)

Salvador Dueñas. Sistema de Energía Solar. P-201130646/PCT/ES2012/070279. 2017.
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