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DUEÑAS CARAZO, SALVADOR

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
GRUPO DE CARACTERIZACIÓN DE MATERIALES Y DISPOSITIVOS ELECTRÓNICOS ( ELECTRONIC MATERIALS AND DEVICES CHARACTERIZATION GROUP, GCME)
 
sduenas@ele.uva.es

Índice H en Web of Science: 15
Índice H en Scopus: 13
 
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[][ PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE40934 , ARE , 2019-01-01 , REC , 294 , 300 , 669 , 0 , CIE , PUB , Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates , Thin Solid Films , Kalam K.; Seemen H.; Mikkor M.; Jõgiaas T.; Ritslaid P.; Tamm A.; Kukli K.; Kasikov A.; Link J.; Stern R.; Dueñas S.; Castan H. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE40100 , ARE , 2018-09-01 , REC , 5013 , 5018 , 47 , 9 , CIE , PUB , Electrical Characterization of Defects Created by gamma-Radiation in HfO2-Based MIS Structures for RRAM Applications , JOURNAL OF ELECTRONIC MATERIALS , Garcia, H.; Gonzalez, M. B.; Mallol, M. M.; Castan, H.; Duenas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigon, A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE40101 , ARE , 2018-09-01 , REC , 4993 , 4997 , 47 , 9 , CIE , PUB , Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals , JOURNAL OF ELECTRONIC MATERIALS , Garcia, H.; Castan, H.; Duenas, S.; Garcia-Hemme, E.; Garcia-Hernansaz, R.; Montero, D.; Gonzalez-Diaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE40099 , ARE , 2018-07-28 , REC , 0 , 0 , 7 , 8 , CIE , PUB , Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides , ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY , Seemen, Helina; Rahn, Mihkel; Kalam, Kristjan; Sajavaara, Timo; Duenas, Salvador; Castan, Helena; Link, Joosep; Stern, Raivo; Kukli, Kaupo; Tamm, Aile , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11079 , ARE , 2018-02-07 , PRS , 1 , 6 , 0 , 0 , CIE , PUB , The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal¿Insulator¿Metal (MIM) Devices for Memory Applications , JOURNAL OF ELECTRONIC MATERIALS , Duenas, S.; Castan, H.; Garcia, H.; Ossorio, O. G.; Dominguez, L. A.; Seemen, H.; Tamm, A.; Kukli, K.; Aarik, J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11939 , ARE , 2018-01-10 , REC , 119 , 128 , 9 , 0 , CIE , PUB , Atomic layer deposition and properties of ZrO2/Fe2O3 thin films , BEILSTEIN JOURNAL OF NANOTECHNOLOGY , Kalam, Kristjan; Seemen, Helina; Ritslaid, Peeter; Rahn, Mihkel; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Duenas, Salvador; Castan, Helena; Garcia, Hector , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3785 , ARE , 2017-09-01 , REC , 1216 , 1219 , 38 , 0 , CIE , PUB , Experimental observation of negative susceptance in HfO2-based RRAM devices , IEEE ELECTRON DEVICE LETTERS , Duenas, S.; Castan, H.; Garcia, H.; Ossorio, Oscar G.; Dominguez, Luis A.; Miranda, E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3787 , ARE , 2017-06-25 , REC , 26 , 29 , 178 , 0 , CIE , PUB , A physically based model for resistive memories including a detailed temperature and variability description , MICROELECTRONIC ENGINEERING , Gonzalez-Cordero, G.; Gonzalez, M. B.; Garcia, H.; Campabadal, F.; Duenas, S.; Castan, H.; Jimenez-Molinos, F.; Roldan, J. B. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3786 , ARE , 2017-06-25 , REC , 30 , 33 , 178 , 0 , CIE , PUB , Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices , MICROELECTRONIC ENGINEERING , Duenas, S.; Castan, H.; Garcia, H.; Miranda, E.; Gonzalez, M. S.; Campabadal, F. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE39976 , ARE , 2017-01-01 , REC , 0 , 0 , 0 , 0 , CIE , PUB , Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures , 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) , Garcia, H.; Castan, H.; Duenas, S.; Gonzalez, M. B.; Acero, M. C.; Campabadal, F. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3788 , ARE , 2016-12-01 , REC , 0 , 0 , 11 , 0 , CIE , PUB , Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications , NANOSCALE RESEARCH LETTERS , Garcia, Hector; Castan, Helena; Duenas, Salvador; Bailon, Luis; Garcia-Hernansanz, Rodrigo; Olea, Javier; del Prado, Alvaro; Martil, Ignacio , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11941 , ARE , 2016-11-18 , REC , 52 , 57 , 2016-Nove , 0 , CIE , PUB , Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications , 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) , Ochoa, M.; Garcia, I.; Lombardero, I.; Ayllon, L.; Cifuentes, L.; Rey-Stolle, I.; Algora, C.; Johnson, A. D.; Davies, J. I.; Tan, K. H.; Loke, W. K.; Wicaksono, S.; Yoon, S. F.; Ochoa, E.; Gabas, M.; Thomas, T.; Ekins-Daukes, N. J.; Garcia, H.; Castan, H.; Duenas, S.; Estrade, S.; Peiro, F. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3789 , ARE , 2016-05-01 , REC , 1877 , 1883 , 63 , 0 , CIE , PUB , Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors , IEEE TRANSACTIONS ON ELECTRON DEVICES , Vaca, Cesar; Gonzalez, Mireia B.; Castan, Helena; Garcia, Hector; Duenas, Salvador; Campabadal, Francesca; Miranda, Enrique; Bailon, Luis A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11942 , ARE , 2016-01-01 , REC , 153 , 165 , 72 , 0 , CIE , PUB , A complete suite of experimental techniques for electrical characterization of conventional and incoming high-k dielectric-based devices , DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING , Duenas, S.; Castan, H.; Garcia, H.; Arroval, T.; Tamm, A.; Kukli, K.; Aarik, J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11080 , ARE , 2016-01-01 , REC , 335 , 342 , 72 , 0 , CIE , PUB , Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors , DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING , Garcia, H.; Gonzalez, M. B.; Vaca, C.; Castan, H.; Duenas, S.; Campabadal, F.; Miranda, E.; Bailon, L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3790 , ARE , 2015-12-30 , REC , 0 , 0 , 118 , 0 , CIE , PUB , A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications , JOURNAL OF APPLIED PHYSICS , Perez, E.; Duenas, S.; Castan, H.; Garcia, H.; Bailon, L.; Montero, D.; Garcia-Hernansanz, R.; Garcia-Hemme, E.; Olea, J.; Gonzalez-Diaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3791 , ARE , 2015-11-01 , REC , 55 , 58 , 147 , 0 , CIE , PUB , Charge and current hysteresis in dysprosium-doped zirconium oxide thin films , MICROELECTRONIC ENGINEERING , Castan, H.; Duenas, S.; Garcia, H.; Bailon, L.; Kukli, K.; Tamm, A.; Kozlova, J.; Aarik, J.; Mizohata, K. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3792 , ARE , 2015-05-01 , REC , 0 , 0 , 33 , 0 , CIE , PUB , Hole trap distribution on 2 MeV electron irradiated high-k dielectrics , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Duenas, Salvador; Castan, Helena; Garcia, Hector; Maria Fuentes, Lisa; Bailon, Luis; Campabadal, Francesca; Marc Rafi, Joan; Bargallo Gonzalez, Mireia; Takakura, Kenitirou; Tsunoda, Isao; Yoneoka, Masashi , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3793 , ARE , 2015-03-01 , REC , 0 , 0 , 30 , 0 , CIE , PUB , Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Perez, E.; Garcia, H.; Castan, H.; Duenas, S. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3794 , ARE , 2015-03-01 , REC , 0 , 0 , 30 , 0 , CIE , PUB , Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Pampillon, M. A.; Feijoo, P. C.; Andres, E. San; Garcia, H.; Castan, H.; Duenas, S. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3795 , ARE , 2015-01-12 , REC , 0 , 0 , 106 , 0 , CIE , PUB , Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications , APPLIED PHYSICS LETTERS , Perez, E.; Castan, H.; Garcia, H.; Duenas, S.; Bailon, L.; Montero, D.; Garcia-Hernansanz, R.; Garcia-Hemme, E.; Olea, J.; Gonzalez-Diaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3797 , ARE , 2015-01-01 , REC , 181 , 187 , 21 , 0 , CIE , PUB , Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films , CHEMICAL VAPOR DEPOSITION , Tamm, Aile; Kozlova, Jekaterina; Arroval, Tonis; Aarik, Lauri; Ritslaid, Peeter; Garcia, Hector; Castan, Helena; Duenas, Salvador; Kukli, Kaupo; Aarik, Jaan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE23698 , ARE , 2015-01-01 , REC , 88 , 99 , 0 , 22 , CIE , PUB , Blue led: una nueva luz para el planeta azul , Alkaid: revista multitemática , Dueñas Carazo, Salvador , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3796 , ARE , 2015-01-01 , REC , 55 , 59 , 591 , 0 , CIE , PUB , Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition , THIN SOLID FILMS , Castan, H.; Garcia, H.; Duenas, S.; Bailon, L.; Miranda, E.; Kukli, K.; Kemell, M.; Ritala, M.; Leskela, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6958 , ARE , 2015-01-01 , REC , 23 , 0 , 0 , 0 , CIE , PUB , Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics , PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) , Garcia, H.; Castan, H.; Duenas, S.; Perez, E.; Bailon, L.; Tamm, A.; Kukli, K.; Aarik, J.; Mizohata, K. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11081 , ARE , 2014-01-01 , REC , 0 , 0 , 1691 , 0 , CIE , PUB , Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors , SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY , Garcia H.; Castan H.; Dueñas S.; Perez E.; Bailon L.; Kukli K.; Ritala M.; Leskela M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3799 , ARE , 2014-01-01 , COP , 1707 , 1711 , 54 , 0 , CIE , PUB , Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors , MICROELECTRONICS RELIABILITY , Blasco, J.; Castan, H.; Garcia, H.; Duenas, S.; Sune, J.; Kemell, M.; Kukli, K.; Ritala, M.; Leskelae, M.; Miranda, E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3800 , ARE , 2013-05-10 , REC , 0 , 0 , 28 , 0 , CIE , PUB , Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Garcia, H.; Castan, H.; Perez, E.; Duenas, S.; Bailon, L.; Blanquart, T.; Niinisto, J.; Kukli, K.; Ritala, M.; Leskela, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3801 , ARE , 2013-05-01 , REC , 482 , 487 , 534 , 0 , CIE , PUB , 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon , THIN SOLID FILMS , Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Campabadal, F.; Rafi, J. M.; Zabala, M.; Beldarrain, O.; Ohyama, H.; Takakura, K.; Tsunoda, I. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3802 , ARE , 2013-01-14 , REC , 0 , 0 , 113 , 0 , CIE , PUB , Experimental verification of intermediate band formation on titanium-implanted silicon , JOURNAL OF APPLIED PHYSICS , Castan, H.; Perez, E.; Garcia, H.; Duenas, S.; Bailon, L.; Olea, J.; Pastor, D.; Garcia-Hemme, E.; Irigoyen, M.; Gonzalez-Diaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3805 , ARE , 2013-01-01 , REC , 65 , 74 , 79 , 0 , CIE , PUB , 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics , SOLID-STATE ELECTRONICS , Rafi, J. M.; Campabadal, F.; Ohyama, H.; Takakura, K.; Tsunoda, I.; Zabala, M.; Beldarrain, O.; Gonzalez, M. B.; Garcia, H.; Castan, H.; Gomez, A.; Duenas, S. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6954 , ARE , 2013-01-01 , REC , 313 , 316 , 0 , 0 , CIE , PUB , Deep level defects on mono-like and polycrystalline silicon solar cells , PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) , Perez, E.; Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Moralejo, B.; Martinez, O.; Jimenez, J.; Parra, V. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE23695 , ARE , 2013-01-01 , REC , 5 , 7 , 0 , 3 , CIE , PUB , El Parque Científico UVa con la transferencia Universidad-Empresa , Revista de ciencias , Dueñas Carazo, Salvador; Rodriguez Blanco, Lourdes; Escudero Sanchez, Alma , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3804 , ARE , 2013-01-01 , REC , 0 , 0 , 31 , 0 , CIE , PUB , Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A , Garcia, Hector; Castan, Helena; Duenas, Salvador; Bailon, Luis; Campabadal, Francesca; Beldarrain, Oihane; Zabala, Miguel; Bargallo Gonzalez, Mireia; Marc Rafi, Joan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6963 , ARE , 2013-01-01 , REC , 285 , 288 , 0 , 0 , CIE , PUB , Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes , PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) , Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Feijoo, P. C.; Pampillon, M. A.; San Andres, E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3803 , ARE , 2013-01-01 , REC , 0 , 0 , 31 , 0 , CIE , PUB , Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Gomez, Alfonso; Castan, Helena; Garcia, Hector; Duenas, Salvador; Bailon, Luis; Angela Pampillon, Maria; Carlos Feijoo, Pedro; San Andres, Enrique , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6952 , ARE , 2013-01-01 , REC , 349 , 352 , 0 , 0 , CIE , PUB , Photocurrent measurements for solar cells characterization , PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) , Perez, E.; Maestro, M.; Garcia, H.; Castan, H.; Duenas, S.; Bailon, L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6953 , ARE , 2013-01-01 , REC , 301 , 304 , 0 , 0 , CIE , PUB , The role of defects in solar cells: Control and detection Defects in solar cells , PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) , Duenas, Salvador; Perez, E.; Castan, H.; Garcia, H.; Bailon, L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6961 , ARE , 2012-01-01 , REC , 189 , 192 , 1496 , 0 , CIE , PUB , Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation , ION IMPLANTATION TECHNOLOGY 2012 , Castan, Helena; Perez, Eduardo; Garcia, Hector; Duenas, Salvador; Bailon, Luis; Olea, Javier; Pastor, David; Garcia-Hemme, Eric; Irigoyen, Maite; Gonzalez-Diaz, German , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3806 , ARE , 2011-01-31 , REC , 2268 , 2272 , 519 , 0 , CIE , PUB , Electrical characterization of high-pressure reactive sputtered ScO x films on silicon , THIN SOLID FILMS , Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P. C.; Toledano-Luque, M.; del Prado, A.; San Andres, E.; Lucia, M. L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3808 , ARE , 2011-01-01 , COP , 0 , 0 , 29 , 0 , CIE , PUB , Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Campabadal, F.; Rafi, J. M.; Zabala, M.; Beldarrain, O.; Faigon, A.; Castan, H.; Gomez, A.; Garcia, H.; Duenas, S. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3807 , ARE , 2011-01-01 , COP , 0 , 0 , 29 , 0 , CIE , PUB , Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Gomez, A.; Castan, H.; Garcia, H.; Duenas, S.; Bailon, L.; Campabadal, F.; Rafi, J. M.; Zabala, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6962 , ARE , 2011-01-01 , REC , 349 , 359 , 41 , 0 , CIE , PUB , Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics , PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 , Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Campabadal, F.; Rafi, J. M.; Zabala, M.; Beldarrain, O.; Ohyama, H.; Takakura, K.; Tsunoda, I. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3809 , ARE , 2011-01-01 , COP , 0 , 0 , 29 , 0 , CIE , PUB , Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Garcia, H.; Castan, H.; Gomez, A.; Duenas, S.; Bailon, L.; Kukli, K.; Kariniemi, M.; Kemell, M.; Niinisto, J.; Ritala, M.; Leskela, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE23697 , ARE , 2011-01-01 , REC , 33 , 35 , 0 , 13 , CIE , PUB , Steve Jobs y la tecnología emocional , Alkaid: revista multitemática , Dueñas Carazo, Salvador; Castan Lanaspa, Helena , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3810 , ARE , 2010-06-01 , REC , 0 , 0 , 107 , 0 , CIE , PUB , Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks , JOURNAL OF APPLIED PHYSICS , Castan, H.; Duenas, S.; Garcia, H.; Gomez, A.; Bailon, L.; Toledano-Luque, M.; del Prado, A.; Martil, I.; Gonzalez-Diaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6964 , ARE , 2010-01-01 , REC , 287 , 297 , 28 , 0 , CIE , PUB , Electrical characterization of high-pressure reactive sputtered Sc2O3 films on silicon , ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT , Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P. C.; Toledano-Luque, M.; del Prado, A.; San Andres, E.; Lucia, M. L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3811 , ARE , 2009-07-01 , REC , 1689 , 1691 , 86 , 0 , CIE , PUB , Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors , MICROELECTRONIC ENGINEERING , Duenas, Salvador; Castan, Helena; Garcia, Hector; Gomez, Alfonso; Bailon, Luis; Kukli, Kaupo; Niinisto, Jaakko; Ritala, Mikko; Leskela, Markku , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3812 , ARE , 2009-02-19 , REC , 416 , 420 , 27 , 0 , CIE , PUB , Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Garcia, H.; Duenas, S.; Castan, H.; Gomez, A.; Bailon, L.; Barquero, R.; Kukli, K.; Ritala, M.; Leskela, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3813 , ARE , 2009-02-17 , REC , 389 , 393 , 27 , 0 , CIE , PUB , Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Duenas, S.; Castan, H.; Garcia, H.; Gomez, A.; Bailon, L.; Kukli, K.; Niinisto, J.; Ritala, M.; Leskela, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3814 , ARE , 2008-11-25 , REC , 0 , 0 , 104 , 0 , CIE , PUB , Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon , JOURNAL OF APPLIED PHYSICS , Garcia, H.; Duenas, S.; Castan, H.; Gomez, A.; Bailon, L.; Toledano-Luque, M.; del Prado, A.; Martil, I.; Gonzalez-Diaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3815 , ARE , 2008-10-01 , REC , 0 , 0 , 155 , 0 , CIE , PUB , Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors , JOURNAL OF THE ELECTROCHEMICAL SOCIETY , Duenas, S.; Castan, H.; Garcia, H.; Gomez, A.; Bailon, L.; Kukli, K.; Aarik, J.; Ritala, M.; Leskela, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3817 , ARE , 2008-01-15 , REC , 393 , 398 , 354 , 0 , CIE , PUB , Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices , JOURNAL OF NON-CRYSTALLINE SOLIDS , Garcia, H.; Duenas, S.; Castan, H.; Bailon, L.; Kukli, K.; Aarik, J.; Ritala, M.; Leskelae, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3816 , ARE , 2008-01-15 , REC , 404 , 408 , 354 , 0 , CIE , PUB , Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films , JOURNAL OF NON-CRYSTALLINE SOLIDS , Duenas, S.; Castan, H.; Garcia, H.; Bailon, L.; Kukli, K.; Lu, J.; Ritala, M.; Leskelae, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11944 , ARE , 2007-12-01 , REC , 169 , 174 , 996 , 0 , CIE , PUB , Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording , SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY , Duenas S.; Castan H.; Garcia H.; Bailon L.; Kukli K.; Ritala M.; Leskela M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3818 , ARE , 2007-12-01 , REC , 1344 , 1351 , 22 , 0 , CIE , PUB , Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Duenas, S.; Castan, H.; Garcia, H.; Gomez, A.; Bailon, L.; Toledano-Luque, M.; Martil, I.; Gonzalez-Diaz, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3819 , ARE , 2007-08-31 , REC , 0 , 0 , 154 , 0 , CIE , PUB , Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics , JOURNAL OF THE ELECTROCHEMICAL SOCIETY , Duenas, S.; Castan, H.; Garcia, H.; Gomez, A.; Bailon, L.; Kukli, K.; Hatanpaeae, T.; Lu, J.; Ritala, M.; Leskelae, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3820 , ARE , 2007-04-01 , REC , 653 , 656 , 47 , 0 , CIE , PUB , Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics , MICROELECTRONICS RELIABILITY , Duenas, S.; Castan, H.; Garcia, H.; Bailon, L.; Kukli, K.; Hatanpaa, T.; Ritala, M.; Leskela, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3821 , ARE , 2006-11-23 , REC , 0 , 0 , 100 , 0 , CIE , PUB , Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon , JOURNAL OF APPLIED PHYSICS , Duenas, S.; Castan, H.; Garcia, H.; Bailon, L.; Kukli, K.; Ritala, M.; Leskela, M.; Rooth, M.; Wilhelmsson, O.; Harsta, A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3822 , ARE , 2006-03-01 , REC , 0 , 0 , 99 , 0 , CIE , PUB , Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon , JOURNAL OF APPLIED PHYSICS , Duenas, S; Castan, H; Garcia, H; de Castro, A; Bailon, L; Kukli, K; Aidla, A; Aarik, J; Mandar, H; Uustare, T; Lu, J; Harsta, A , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE23696 , ARE , 2006-01-01 , REC , 275 , 314 , 0 , 24 , CIE , PUB , Revisión de la incidencia de la Peste Negra (1348) en Navarra a través de un modelo matemático de población , Studia historica. Historia medieval , Castan Lanaspa, Guillermo; Dueñas Carazo, Salvador , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3823 , ARE , 2005-10-01 , REC , 1044 , 1051 , 20 , 0 , CIE , PUB , A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Duenas, S; Castan, H; Garcia, H; San Andres, E; Toledano-Luque, M; Martil, I; Gonzalez-Diaz, G; Kukli, K; Uustare, T; Aarik, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3824 , ARE , 2005-05-01 , COP , 949 , 952 , 45 , 0 , CIE , PUB , Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition , MICROELECTRONICS RELIABILITY , Duenas, S; Castan, H; Garcia, H; Barbolla, J; Kukli, K; Aarik, J; Ritala, M; Leskela, M , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3825 , ARE , 2005-03-01 , REC , 222 , 229 , 474 , 0 , CIE , PUB , Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates , THIN SOLID FILMS , Duenas, S; Castan, H; Garcia, H; Barbolla, J; Kukli, K; Ritala, M; Leskela, M , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3826 , ARE , 2004-09-01 , REC , 1141 , 1148 , 19 , 0 , CIE , PUB , The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Duenas, S; Castan, H; Garcia, H; Barbolla, J; Kukli, K; Aarik, J; Aidla, A , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3827 , ARE , 2004-08-01 , REC , 1365 , 1372 , 96 , 0 , CIE , PUB , Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon , JOURNAL OF APPLIED PHYSICS , Duenas, S; Castan, H; Garcia, H; Barbolla, J; Kukli, K; Aarik, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6956 , ARE , 2004-01-01 , REC , 83 , 87 , 786 , 0 , CIE , PUB , Conductance transient comparative analysis of ECR-PECVD deposited SiNx,SiO2/SiNx and SiOxN gamma dielectric films on silicon substrates , FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES , Castan, H; Duenas, S; Barbolla, J; Del Prado, A; Andres, ES; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3828 , ARE , 2004-01-01 , REC , 66 , 70 , 43 , 0 , CIE , PUB , Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates , JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS , Castan, H; Duenas, S; Barbolla, J; Del Prado, A; Andres, ES; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6960 , ARE , 2004-01-01 , REC , 147 , 152 , 786 , 0 , CIE , PUB , On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2,Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films , FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES , Duenas, S; Castan, H; Garcia, H; Barbolla, J; Kukli, K; Ritala, M; Leskela, M , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3829 , ARE , 2003-10-01 , COP , 1623 , 1629 , 47 , 0 , CIE , PUB , Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films , SOLID-STATE ELECTRONICS , Duenas, S; Castan, H; Barbolla, J; Kukli, K; Ritala, M; Leskela, M , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3830 , ARE , 2003-08-01 , REC , 4978 , 4981 , 42 , 0 , CIE , PUB , Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films , JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS , Castan, H; Duenas, S; Barbolla, J; Del Prado, A; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3832 , ARE , 2003-05-01 , REC , 375 , 378 , 14 , 0 , CIE , PUB , A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Duenas, S; Castan, H; Barbolla, J; San Andres, E; Del Prado, A; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3831 , ARE , 2003-05-01 , REC , 287 , 290 , 14 , 0 , CIE , PUB , Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Castan, H; Duenas, S; Barbolla, J; San Andres, E; Del Prado, A; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3833 , ARE , 2002-11-01 , LET , 0 , 0 , 41 , 0 , CIE , PUB , Experimental verification of direct tunneling assisted electron capture of disordered-induced gap states in metal-insulator-semiconductor structures , Japanese Journal of Applied Physics, Part 2: Letters , Castan H.; Dueñas S.; Barbolla J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3834 , ARE , 2001-08-01 , REC , 1441 , 1450 , 45 , 0 , CIE , PUB , Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: An inexpensive and thermally stable high k dielectric , SOLID-STATE ELECTRONICS , Duenas, S; Castan, E; Barbolla, J; Kola, RR; Sullivan, PA , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3835 , ARE , 2001-07-01 , REC , 4479 , 4484 , 40 , 0 , CIE , PUB , Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques , JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS , Castan, H; Duenas, S; Barbolla, J; Blanco, N; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3837 , ARE , 2001-04-01 , REC , 263 , 267 , 12 , 0 , CIE , PUB , C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Castan, H; Duenas, S; Barbolla, J; Redondo, E; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3836 , ARE , 2001-04-01 , REC , 317 , 321 , 12 , 0 , CIE , PUB , DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Duenas, S; Castan, H; Barbolla, J; Kola, RR; Sullivan, PA , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11946 , ARE , 2001-01-01 , REC , 186 , 191 , 19 , 0 , CIE , PUB , Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx:H/InP structures , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Redondo, E; Martil, I; Gonzalez-Diaz, G; Castan, H; Duenas, S , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3838 , ARE , 2000-12-01 , REC , 845 , 848 , 40 , 0 , CIE , PUB , Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx:H/InP and A1/SiNx:H/ in0.53Ga0.47As structures by DLTS and conductance transient techniques , MICROELECTRONICS RELIABILITY , Castan, H; Duenas, S; Barbolla, J; Redondo, E; Blanco, N; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3839 , ARE , 2000-11-01 , REC , 6212 , 6215 , 39 , 0 , CIE , PUB , Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures , JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS , Castan, H; Duenas, S; Barbolla, J; Redondo, E; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3840 , ARE , 1999-12-01 , REC , 659 , 662 , 40 , 0 , CIE , PUB , Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress , MICROELECTRONICS RELIABILITY , Duenas, S; Castan, H; Barbolla, J; Kola, RR; Sullivan, PA , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3842 , ARE , 1999-12-01 , REC , 6924 , 6930 , 86 , 0 , CIE , PUB , Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced AI/SiNx:H/InP metal-insulator-semiconductor structures fabrication , JOURNAL OF APPLIED PHYSICS , Pelaez, R; Castan, E; Duenas, S; Barbolla, J; Redondo, E; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3841 , ARE , 1999-12-01 , COP , 2178 , 2182 , 17 , 0 , CIE , PUB , Thermally induced improvements on SiNx:H/lnP devices , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS , Redondo, E; Blanco, N; Martil, I; Gonzalez-Diaz, G; Pelaez, R; Deunas, S; Castan, H , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3843 , ARE , 1999-11-01 , REC , 4855 , 4860 , 86 , 0 , CIE , PUB , Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions , JOURNAL OF APPLIED PHYSICS , Quintanilla, L; Pinacho, R; Enriquez, L; Pelaez, R; Duenas, S; Castan, E; Bailon, L; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3844 , ARE , 1999-06-01 , REC , 7978 , 7980 , 85 , 0 , CIE , PUB , Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions , JOURNAL OF APPLIED PHYSICS , Quintanilla, L; Pinacho, R; Enriquez, L; Pelaez, R; Duenas, S; Castan, E; Bailon, L; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3846 , ARE , 1999-01-01 , REC , 413 , 418 , 10 , 0 , CIE , PUB , Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Quintanilla, L; Duenas, S; Castan, E; Pinacho, R; Pelaez, R; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3847 , ARE , 1999-01-01 , REC , 373 , 377 , 10 , 0 , CIE , PUB , Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Duenas, S; Pelaez, R; Castan, E; Pinacho, R; Quintanilla, L; Barbolla, J; Martil, I; Redondo, E; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3845 , ARE , 1999-01-01 , REC , 379 , 384 , 10 , 0 , CIE , PUB , Use of anodic tantalum pentoxide for high-density capacitor fabrication , JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , Duenas, S; Castan, E; Barbolla, J; Kola, RR; Sullivan, PA , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3848 , ARE , 1998-04-01 , REC , 389 , 393 , 13 , 0 , CIE , PUB , Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , Quintanilla, L; Duenas, S; Castan, E; Pinacho, R; Pelaez, R; Barbolla, J; Martin, JM; Gonzalez-Diaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3850 , ARE , 1998-01-01 , REC , 332 , 338 , 83 , 0 , CIE , PUB , Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures , JOURNAL OF APPLIED PHYSICS , Garcia, S; Martil, I; Diaz, GG; Castan, E; Duenas, S; Fernandez, M , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3849 , ARE , 1998-01-01 , REC , 600 , 603 , 83 , 0 , CIE , PUB , Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method , JOURNAL OF APPLIED PHYSICS , Garcia, S; Martil, I; Diaz, GG; Castan, E; Duenas, S; Fernandez, M , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3851 , ARE , 1997-11-01 , REC , 4338 , 4345 , 82 , 0 , CIE , PUB , Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs , JOURNAL OF APPLIED PHYSICS , Duenas, S; Pinacho, R; Castan, E; Quintanilla, L; Pelaez, R; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3852 , ARE , 1997-08-11 , REC , 826 , 828 , 71 , 0 , CIE , PUB , Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures , APPLIED PHYSICS LETTERS , Duenas, S; Pelaez, R; Castan, E; Pinacho, R; Quintanilla, L; Barbolla, J; Martil, I; GonzalezDiaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3853 , ARE , 1997-04-01 , REC , 3143 , 3150 , 81 , 0 , CIE , PUB , Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP , JOURNAL OF APPLIED PHYSICS , Quintanilla, L; Duenas, S; Castan, E; Pinacho, R; Barbolla, J; Martin, JM; GonzalezDiaz, G , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3854 , ARE , 1997-01-01 , REC , 103 , 109 , 41 , 0 , CIE , PUB , Thermal emission processes of DX centres in AlxGa1-xAs:Si , SOLID-STATE ELECTRONICS , Enriquez, L; Duenas, S; Castan, E; Quintanilla, L; Pinacho, R; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3855 , ARE , 1996-01-01 , REC , 310 , 315 , 79 , 0 , CIE , PUB , Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions , JOURNAL OF APPLIED PHYSICS , Quintanila, L; Duenas, S; Castan, E; Pinacho, R; Pelaz, L; Bailon, L; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3856 , ARE , 1995-12-01 , REC , 5325 , 5330 , 78 , 0 , CIE , PUB , Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP , JOURNAL OF APPLIED PHYSICS , MARTIN, JM; GARCIA, S; MARTIL, I; GONZALEZDIAZ, G; CASTAN, E; DUENAS, S , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE12031 , ARE , 1995-10-01 , REC , 1074 , 1078 , 11 , 0 , CIE , PUB , Ability of capacitance¿voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors , MATERIALS SCIENCE AND TECHNOLOGY , Duenas, S; Castan, E; Quintanilla, L; Enriquez, L; Barbolla, J; LoraTamayo, E; Montserrat, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3857 , ARE , 1994-12-01 , REC , 1637 , 1648 , 9 , 0 , CIE , PUB , Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique , SEMICONDUCTOR SCIENCE AND TECHNOLOGY , DUENAS, S; CASTAN, E; ENRIQUEZ, L; BARBOLLA, J; MONTSERRAT, J; LORATAMAYO, E , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE40608 , ARE , 1994-01-01 , REC , 47 , 50 , 0 , 135 , CIE , PUB , A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON , DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES , DUENAS, S; CASTAN, E; BARBOLLA, J; MONTSERRAT, J; TAMAYO, EL , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6951 , ARE , 1992-07-15 , REC , 525 , 530 , 72 , 0 , CIE , PUB , INFLUENCE OF REFILLING EFFECTS ON DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS IN SE-DOPED ALXGA1-XAS , JOURNAL OF APPLIED PHYSICS , ENRIQUEZ, L; DUENAS, S; BARBOLLA, J; IZPURA, I; MUNOZ, E , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6949 , ARE , 1992-03-01 , REC , 285 , 297 , 35 , 0 , CIE , PUB , ADMITTANCE SPECTROSCOPY IN JUNCTIONS , SOLID-STATE ELECTRONICS , BARBOLLA, J; DUENAS, S; BAILON, L , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6955 , ARE , 1991-04-15 , REC , 4300 , 4305 , 69 , 0 , CIE , PUB , CHARACTERIZATION OF THE DX CENTERS IN ALGAAS-SI BY ADMITTANCE SPECTROSCOPY , JOURNAL OF APPLIED PHYSICS , DUENAS, S; IZPURA, I; ARIAS, J; ENRIQUEZ, L; BARBOLLA, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3860 , ARE , 1990-12-01 , REC , 6309 , 6314 , 67 , 0 , CIE , PUB , Characterization of the EL2 center in GaAs by optical admittance spectroscopy , JOURNAL OF APPLIED PHYSICS , DUENAS, S; CASTAN, E; DEDIOS, A; BAILON, L; BARBOLLA, J; PEREZ, A , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6950 , ARE , 1989-04-01 , REC , 287 , 293 , 32 , 0 , CIE , PUB , CONSTANT-CAPACITANCE DEEP-LEVEL OPTICAL SPECTROSCOPY , SOLID-STATE ELECTRONICS , VILANOVA, J; DUENAS, S; RUBIO, E; BAILON, L; BARBOLLA, J; LORATAMAYO, E , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6959 , ARE , 1987-04-01 , REC , 2541 , 2545 , 61 , 0 , CIE , PUB , OPTICAL ADMITTANCE SPECTROSCOPY - A NEW METHOD FOR DEEP LEVEL CHARACTERIZATION , JOURNAL OF APPLIED PHYSICS , DUENAS, S; JARAIZ, M; VICENTE, J; RUBIO, E; BAILON, L; BARBOLLA, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6957 , ARE , 1986-09-01 , REC , 883 , 884 , 29 , 0 , CIE , PUB , ELECTRON THERMAL EMISSION RATES OF NICKEL CENTERS IN SILICON , SOLID-STATE ELECTRONICS , JARAIZ, M; DUENAS, S; VICENTE, J; BAILON, L; BARBOLLA, J , S ) ) ) ][ PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1859 , CAP , null , , 313 , 316 , , , , , Deep level defects on mono-like and polycrystalline silicon solar cells , , Perez, E.; Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Moralejo, B.; Martinez, O.; Jimenez, J.; Parra, V. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1865 , CAP , null , , 285 , 288 , , , , , Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes , , Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Feijoo, P. C.; Pampillon, M. A.; San Andres, E. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1857 , CAP , null , , 349 , 352 , , , , , Photocurrent measurements for solar cells characterization , , Perez, E.; Maestro, M.; Garcia, H.; Castan, H.; Duenas, S.; Bailon, L. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1858 , CAP , null , , 301 , 304 , , , , , The role of defects in solar cells: Control and detection Defects in solar cells , , Duenas, Salvador; Perez, E.; Castan, H.; Garcia, H.; Bailon, L. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1864 , CAP , null , , 349 , 359 , , , , , Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics , , Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Campabadal, F.; Rafi, J. M.; Zabala, M.; Beldarrain, O.; Ohyama, H.; Takakura, K.; Tsunoda, I. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1860 , CAP , null , , 83 , 87 , , , , , Conductance transient comparative analysis of ECR-PECVD deposited SiNx,SiO2/SiNx and SiOxN gamma dielectric films on silicon substrates , , Castan, H; Duenas, S; Barbolla, J; Del Prado, A; Andres, ES; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1863 , CAP , null , , 147 , 152 , , , , , On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2,Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films , , Duenas, S; Castan, H; Garcia, H; Barbolla, J; Kukli, K; Ritala, M; Leskela, M , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1862 , CAP , null , , 231 , 236 , , , , , Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures , , Castan, H; Duenas, S; Barbolla, J; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1855 , CAP , null , , 185 , 190 , , , , , Radio-frequency impedance analysis of anodic tantalum pentoxide thin films , , Duenas, S; Castan, H; Barbolla, J; Kola, RR; Sullivan, PA , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1856 , CAP , null , , 371 , 378 , , , , , Fabrication of Ta2O5 thin films by anodic oxidation of tantalum nitride and tantalum silicide: Growing mechanisms, electrical characterization and ULSI M-I-M capacitor performances , , Duenas, S; Castan, H; Barbolla, J; Kola, RR; Sullivan, PA , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1861 , CAP , null , , 87 , 92 , , , , , Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures , , Duenas, S; Pelaez, R; Castan, E; Barbolla, J; Martil, I; Gonzalez-Diaz, G , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP14673 , CAP , null , , 121 , 126 , , , , , Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT) , , Duenas, S; Pinacho, R; Quintanilla, L; Castan, E; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP14745 , CAP , null , , 47 , 50 , , , , , A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON , , DUENAS, S; CASTAN, E; BARBOLLA, J; MONTSERRAT, J; TAMAYO, EL , S ) ) ) ][][][][][][][][][][ Tesis ( TES2145639706 , 100 , 2017-10-27 , SC , 58015811 , Universidad de Valladolid , A DEPENDABILITY MINDED APPROACH TO VIDEO RECORDING BY MEANS OF VIRTUALIZATION , S , ) , Tesis ( TES2145630375 , 100 , 2006-06-20 , SC , 58015811 , Universidad de Valladolid , CARACTERIZACIÓN DE DIELÉCTRICOS DE ALTA PERMITIVIDAD CRECIDOS MEDIANTE ALD, HPRS Y ECR-CVD , S , ) , Tesis ( TES69397 , 100 , 2000-03-31 , SC , 58015811 , Universidad de Valladolid , CARACTERIZACIÓN ELÉCTRICA DE ESTRUCTURAS MIS DE NITRURO DE SILICIO CRECIDO POR ECRVD , S , ) , Tesis ( TES69398 , 100 , 1998-05-29 , SC , 58015811 , Universidad de Valladolid , CARACTERIZACIÓN DEL DAÑADO ELÉCTRICO RESIDUAL TRAS PROCESOS DE IMPLANTACIÓN IÓNICA Y RTA EN SILICIO Y FOSFURO DE INDIO , S , ) ][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@8bb7b19, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4c8eaac9, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2a6e9963, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@43184858, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6f35abd1, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2ca35f61, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@19caf02c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5a5de5ee, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4aa29a9b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@79545c64, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@117de777, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@60e73e99, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6dbee082, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@e85af18, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6aaa581a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@557e49ab, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5616a566, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@68c4f7b1][][ Convenio ( ActivEquipo ( CNV60253 , CNV , , 2018-01-01 , 2018-12-31 , null , 15000 , S , ) ) , Convenio ( ActivEquipo ( CNV60254 , CNV , , 2017-11-23 , 2017-12-31 , null , 15000 , S , ) ) , Convenio ( ActivEquipo ( CNV51961 , CNV , , 2013-01-01 , 2013-12-31 , null , 25000 , S , ) ) , Convenio ( ActivEquipo ( CNV54308 , CNV , , 2011-05-17 , 2012-12-31 , null , 90000 , S , ) ) , Convenio ( ActivEquipo ( CNV55166 , CNV , , 1996-10-01 , 1996-12-31 , null , 3904.18 , S , ) ) ][][][][][][ Patente ( PAT1141, Salvador Dueñas, P-201130646/PCT/ES2012/070279, 2017-12-11, ) ][][ Proyecto ( ActivEquipo ( PJI60167 , PJI , TEC2017-84321-C4-2-R , 2018-01-01 , 2020-12-31 , null , 124630 , S , ) ) , Proyecto ( ActivEquipo ( PJI53201 , PJI , TEC2014-52152-C3-3-R , 2015-01-01 , 2018-12-31 , 2018-12-31 , 122694 , S , ) ) , Proyecto ( ActivEquipo ( PJI52089 , PJI , TEC2011-27292-C02-01 , 2012-01-01 , 2015-12-31 , 2015-12-31 , 104544 , S , ) ) , Proyecto ( ActivEquipo ( PJI49698 , PJI , VA128A11-2 , 2011-03-21 , 2013-12-31 , null , 29900 , S , ) ) , Proyecto ( ActivEquipo ( PJI52132 , PJI , TEC2008-06698-C02-02 , 2009-01-01 , 2011-12-31 , null , 205700 , S , ) ) , Proyecto ( ActivEquipo ( PJI48772 , PJI , VA018A06 , 2006-07-26 , 2008-10-31 , null , 18200 , S , ) ) , Proyecto ( ActivEquipo ( PJI49126 , PJI , TEC2005-05101 , 2005-10-15 , 2008-12-31 , null , 152558 , S , ) ) , Proyecto ( ActivEquipo ( PJI47543 , PJI , VA066/02 , 2002-02-19 , 2004-11-20 , null , 27753 , S , ) ) , Proyecto ( ActivEquipo ( PJI47796 , PJI , BFM2001-2250 , 2001-12-28 , 2005-06-27 , null , 213058.77 , S , ) ) , Proyecto ( ActivEquipo ( PJI47295 , PJI , 1FD97-2085 , 1999-12-30 , 2001-12-31 , null , 134867.11 , S , ) ) , Proyecto ( ActivEquipo ( PJI47496 , PJI , PB98-0348 , 1999-12-30 , 2001-12-30 , null , 134626.7 , S , ) ) , Proyecto ( ActivEquipo ( PJI53777 , PJI , VA35/96 , 1997-01-04 , 2000-01-03 , null , 18261.15 , S , ) ) , Proyecto ( ActivEquipo ( PJI53598 , PJI , PB95-0710 , 1996-11-01 , 1999-11-01 , null , 152056.06 , S , ) ) , Proyecto ( ActivEquipo ( PJI53524 , PJI , PB91-0931 , 1992-07-03 , 1995-07-02 , null , 30351.11 , S , ) ) ][][][][]

AYUDA A LA INVESTIGACIÓN

PUBLICACIONES

Artículos de revista (108)

Kalam K.; Seemen H.; Mikkor M.; Jõgiaas T.; Ritslaid P.; Tamm A.; Kukli K.; Kasikov A.; Link J.; Stern R.; Dueñas S.; Castan H. Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates. THIN SOLID FILMS 2019; 669: 294-300.
Enlace a la publicación
Garcia, H.; Gonzalez, M. B.; Mallol, M. M.; Castan, H.; Duenas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigon, A. Electrical Characterization of Defects Created by gamma-Radiation in HfO2-Based MIS Structures for RRAM Applications. JOURNAL OF ELECTRONIC MATERIALS 2018; 47(9): 5013-5018.
Enlace a la publicación
Garcia, H.; Castan, H.; Duenas, S.; Garcia-Hemme, E.; Garcia-Hernansaz, R.; Montero, D.; Gonzalez-Diaz, G. Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals. JOURNAL OF ELECTRONIC MATERIALS 2018; 47(9): 4993-4997.
Enlace a la publicación
Seemen, Helina; Rahn, Mihkel; Kalam, Kristjan; Sajavaara, Timo; Duenas, Salvador; Castan, Helena; Link, Joosep; Stern, Raivo; Kukli, Kaupo; Tamm, Aile. Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2018; 7(8).
Enlace a la publicación
Duenas, S.; Castan, H.; Garcia, H.; Ossorio, O. G.; Dominguez, L. A.; Seemen, H.; Tamm, A.; Kukli, K.; Aarik, J. The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal¿Insulator¿Metal (MIM) Devices for Memory Applications. JOURNAL OF ELECTRONIC MATERIALS 2018; 1-6.
Enlace a la publicación
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Capítulos de libros (13)

Perez, E.; Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Moralejo, B.; Martinez, O.; Jimenez, J.; Parra, V. Deep level defects on mono-like and polycrystalline silicon solar cells. En: 2013. p. 313-316.

Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Feijoo, P. C.; Pampillon, M. A.; San Andres, E. Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes. En: 2013. p. 285-288.

Perez, E.; Maestro, M.; Garcia, H.; Castan, H.; Duenas, S.; Bailon, L. Photocurrent measurements for solar cells characterization. En: 2013. p. 349-352.

Duenas, Salvador; Perez, E.; Castan, H.; Garcia, H.; Bailon, L. The role of defects in solar cells: Control and detection Defects in solar cells. En: 2013. p. 301-304.

Garcia, H.; Castan, H.; Duenas, S.; Bailon, L.; Campabadal, F.; Rafi, J. M.; Zabala, M.; Beldarrain, O.; Ohyama, H.; Takakura, K.; Tsunoda, I. Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics. En: 2011. p. 349-359.

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AYUDA A LA INVESTIGACIÓN

Proyectos (14)

FABRICACIÓN, CARACTERIZACIÓN, SIMULACIÓN, MODELADO Y APLICACIONES DE DISPOSITIVOS DE CONMUTACIÓN RESISTIVA.. CASTAN LANASPA, MARIA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP). TEC2017-84321-C4-2-R. MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD FONDOS FEDER 2018-2020
CARACTERIZACIÓN ELÉCTRICA DE ESTRUCTURAS MIS Y MIM CON DIELÉCTRICOS DE ALTA PERMITIVIDAD PARA SU APLICACIÓN EN RRAMS Y MEMRISTORES. CASTAN LANASPA, MARIA HELENA (IP). TEC2014-52152-C3-3-R. MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD 2015-2018
FABRICACIÓN Y CARACTERIZACIÓN DE CAPAS DE DIELÉCTRICOS DE ALTA PERMITIVIDAD DEPOSITADAS POR ALD SOBRE SISLICIO Y SOBRE GRAFENO. CASTAN LANASPA, MARIA HELENA (IP). TEC2011-27292-C02-01. MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN 2012-2015
CUALIFICACIÓN DE SUSTRATOS DE SILICIO MULTICRISTALINO PARA CÉLULAS SOLARES. CASTAN LANASPA, MARIA HELENA (IP). VA128A11-2. JCYL CONSEJERÍA DE EDUCACIÓN 2011-2013
CARACTERIZACIÓN ELÉCTRICA DE CAPAS DE DIELECTRICOS DE ALTA PERMITIVIDAD DEPOSITADOS POR ALD. DUEÑAS CARAZO, SALVADOR (IP). TEC2008-06698-C02-02. MICINN SECRETARÍA DE ESTADO DE UNIVERSIDADES 2009-2011
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Convenios (5)

DESARROLLO DE LAS ACTIVIDADES DE LA CÁTEDRA DENOMINADA "TECNOLOGÍAS MÓVILES APLICADAS A LA EDUCACIÓN". BAEYENS LAZARO, ENRIQUE ; DUEÑAS CARAZO, SALVADOR . SINENTIDADFINAN, TELEFÓNICA MÓVILES ESPAÑA, SA TELEFÓNICA MÓVILES ESPAÑA, SA, SINENTIDADFINAN 2018
CÁTEDRA TELEFÓNICA DE TECNOLOGÍAS MÓVILES APLICADAS A LA EDUCACIÓN. DUEÑAS CARAZO, SALVADOR . TELEFÓNICA MÓVILES ESPAÑA, SA TELEFÓNICA MÓVILES ESPAÑA, SA 2017
CONVENIO ESPECIFIFICO ENTRE LA UNIVERSIDAD DE VALLADOLID Y TELEFONICA EN EL MARCO DE COLABORACION PARA EL DESARROLLO DE INICIATIVAS CONJUNTAS. ADDENDUM II. DUEÑAS CARAZO, SALVADOR . TELEFÓNICA, S.A. TELEFÓNICA, S.A. 2013
CONVENIO ESPECÍFICO ENTRE LA UNIVERSIDAD DE VALLADOLID Y TELEFÓNICA, S.A. EN EL MARCO DEL CONVENIO MARCO DE COLABORACIÓN PARA EL DESARROLLO DE INICIATIVAS CONJUNTAS. DUEÑAS CARAZO, SALVADOR . TELEFÓNICA, S.A. TELEFÓNICA, S.A. 2011
INVESTIGACIÓN EN TECNOLOGÍAS DE FABRICACIÓN DE MÓDULOS MULTICHIP. DUEÑAS CARAZO, SALVADOR . DICRYL, S.A. DICRYL, S.A. 1996
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OTROS

Tesis doctorales (4)

CABEZA RODRIGUEZ, MIGUEL ÁNGEL A DEPENDABILITY MINDED APPROACH TO VIDEO RECORDING BY MEANS OF VIRTUALIZATION. UNIVERSIDAD DE VALLADOLID; 2017.
 
GARCIA GARCIA, HECTOR CARACTERIZACIÓN DE DIELÉCTRICOS DE ALTA PERMITIVIDAD CRECIDOS MEDIANTE ALD, HPRS Y ECR-CVD. UNIVERSIDAD DE VALLADOLID; 2006.
 
PELAEZ CARRANZA, ROSA MARIA CARACTERIZACIÓN ELÉCTRICA DE ESTRUCTURAS MIS DE NITRURO DE SILICIO CRECIDO POR ECRVD. UNIVERSIDAD DE VALLADOLID; 2000.
 
PINACHO GOMEZ, RUTH CARACTERIZACIÓN DEL DAÑADO ELÉCTRICO RESIDUAL TRAS PROCESOS DE IMPLANTACIÓN IÓNICA Y RTA EN SILICIO Y FOSFURO DE INDIO. UNIVERSIDAD DE VALLADOLID; 1998.
 
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Congresos (18)

AYUDAS UVA A LA INVESTIGACION: 229TH ECS MEETING, ( ESTADOS UNIDOS DE AMÉRICA ) 29/05/2016
(Asistencia). DUEÑAS CARAZO, SALVADOR. AYUDAS UVA A LA INVESTIGACION: 229TH ECS MEETING
Proceedings - IEEE Ultrasonics Symposium, New York, NY 01/01/2007
(Ponencia). Santos I.; Lopez P.; Aboy M.; Marques L.; Pelaz L. 2017 Spanish Conference on Electron Devices, CDE 2017
Journal of Nonlinear Science, 01/01/2007
(Ponencia). Santos I.; Marques L.; Pelaz L.; Lopez P.; Aboy M. AIP Conference Proceedings
Nutricion Clinica y Dietetica Hospitalaria, 01/01/2007
(Ponencia). Aboy M.; Santos I.; Pelaz L.; Marques L.; Lopez P. Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
Physical Review B - Condensed Matter and Materials Physics, 01/01/2007
(Ponencia). Aboy M.; Pelaz L.; Lopez P.; Bruno E.; Mirabella S. Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Patentes (1)

Salvador Dueñas. Sistema de Energía Solar. P-201130646/PCT/ES2012/070279. 2017.
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