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DUEÑAS CARAZO, SALVADOR

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
GRUPO DE CARACTERIZACIÓN DE MATERIALES Y DISPOSITIVOS ELECTRÓNICOS ( ELECTRONIC MATERIALS AND DEVICES CHARACTERIZATION GROUP, GCME)
 
salvador.duenas@uva.es

Índice H en Web of Science: 18
Índice H en Scopus: 19
 

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65132]], camposKey:0038-1101 2021-12-01 Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66588]], camposKey:1936-0851 2021-11-23 Standards for the Characterization of Endurance in Resistive Switching Devices1721417231, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65134]], camposKey:0038-1101 2021-09-01 Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65133]], camposKey:0038-1101 2021-09-01 Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66007]], camposKey:0957-4484 2021-08-13 Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=67164]], camposKey:2079-9292 2021-01-01 Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices28160, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65135]], camposKey:2162-8769 2021-01-01 Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65137]], camposKey:1938-6737 2021-01-01 Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications2935, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65136]], camposKey:1938-6737 2021-01-01 Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications4559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66008]], camposKey:0925-8388 2020-12-15 Properties of atomic layer deposited iron oxide and bismuth oxide chloride structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66009]], camposKey:0734-2101 2020-12-01 Structure and behavior of ZrO2-graphene-ZrO2stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66010]], camposKey:0734-2101 2020-07-01 Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55351]], camposKey:0957-4484 2020-02-25 Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55346]], camposKey:1938-6737 2020-01-01 Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications1720, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57061]], camposKey:2168-6734 2020-01-01 Current Pulses to Control the Conductance in RRAM Devices291296, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55347]], camposKey:1938-6737 2020-01-01 Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films36, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52709]], camposKey:0167-9317 2019-01-01 Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52710]], camposKey:0167-9317 2019-01-01 Controlling the intermediate conductance states in RRAM devices for synaptic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52708]], camposKey:0167-9317 2019-01-01 Dynamics of set and reset processes on resistive switching memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40934]], camposKey:0040-6090 2019-01-01 Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates294300, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52711]], camposKey:0021-8979 2018-01-01 Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11939]], camposKey:2190-4286 2018-01-01 Atomic layer deposition and properties of ZrO2/Fe2O3 thin films119128, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40100]], camposKey:0361-5235 2018-01-01 Electrical Characterization of Defects Created by gamma-Radiation in HfO2-Based MIS Structures for RRAM Applications50135018, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40101]], camposKey:0361-5235 2018-01-01 Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals49934997, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40099]], camposKey:2162-8769 2018-01-01 Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11079]], camposKey:0361-5235 2018-01-01 The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal Insulator Metal (MIM) Devices for Memory Applications49384943, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3787]], camposKey:0167-9317 2017-06-25 A physically based model for resistive memories including a detailed temperature and variability description2629, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39977]], camposKey:2163-4971 2017-01-01 A Physically Based Model to describe Resistive Switching in different RRAM technologies00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39976]], camposKey:2163-4971 2017-01-01 Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3785]], camposKey:0741-3106 2017-01-01 Experimental observation of negative susceptance in HfO2-based RRAM devices12161219, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3786]], camposKey:0167-9317 2017-01-01 Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices3033, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3789]], camposKey:0018-9383 2016-05-01 Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors18771883, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11942]], camposKey:1938-5862 2016-01-01 A complete suite of experimental techniques for electrical characterization of conventional and incoming high-k dielectric-based devices153165, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11941]], camposKey:0160-8371 2016-01-01 Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications5257, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3788]], camposKey:1931-7573 2016-01-01 Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11080]], camposKey:1938-5862 2016-01-01 Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors335342, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3790]], camposKey:0021-8979 2015-12-30 A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3791]], camposKey:0167-9317 2015-11-01 Charge and current hysteresis in dysprosium-doped zirconium oxide thin films5558, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3792]], camposKey:2166-2746 2015-05-01 Hole trap distribution on 2 MeV electron irradiated high-k dielectrics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3793]], camposKey:0268-1242 2015-03-01 Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3794]], camposKey:0268-1242 2015-03-01 Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3797]], camposKey:0948-1907 2015-01-01 Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films181187, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23698]], camposKey:1888-8860 2015-01-01 Blue led: una nueva luz para el planeta azul8899, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3796]], camposKey:0040-6090 2015-01-01 Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition5559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6958]], camposKey:2163-4971 2015-01-01 Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3795]], camposKey:0003-6951 2015-01-01 Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11081]], camposKey:0272-9172 2014-01-01 Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3799]], camposKey:0026-2714 2014-01-01 Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors17071711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3800]], camposKey:0268-1242 2013-05-10 Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3801]], camposKey:0040-6090 2013-05-01 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon482487, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3802]], camposKey:0021-8979 2013-01-14 Experimental verification of intermediate band formation on titanium-implanted silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6954]], camposKey:2163-4971 2013-01-01 Deep level defects on mono-like and polycrystalline silicon solar cells313316, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23695]], camposKey:2255-5943 2013-01-01 El Parque Científico UVa con la transferencia Universidad-Empresa57, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3804]], camposKey:0734-2101 2013-01-01 Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6963]], camposKey:2163-4971 2013-01-01 Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes285288, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3803]], camposKey:2166-2746 2013-01-01 Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6952]], camposKey:2163-4971 2013-01-01 Photocurrent measurements for solar cells characterization349352, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6953]], camposKey:2163-4971 2013-01-01 The role of defects in solar cells: Control and detection Defects in solar cells301304, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3805]], camposKey:0038-1101 2013-01-01 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics6574, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6961]], camposKey:0094-243X 2012-01-01 Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation189192, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3806]], camposKey:0040-6090 2011-01-31 Electrical characterization of high-pressure reactive sputtered ScO x films on silicon22682272, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3808]], camposKey:2166-2746 2011-01-01 Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3807]], camposKey:2166-2746 2011-01-01 Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6962]], camposKey:1938-5862 2011-01-01 Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics349359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3809]], camposKey:2166-2746 2011-01-01 Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23697]], camposKey:1888-8860 2011-01-01 Steve Jobs y la tecnología emocional3335, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3810]], camposKey:0021-8979 2010-06-01 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6964]], camposKey:1938-5862 2010-01-01 Electrical characterization of high-pressure reactive sputtered Sc2O3 films on silicon287297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3811]], camposKey:0167-9317 2009-07-01 Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors16891691, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3812]], camposKey:1071-1023 2009-02-19 Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics416420, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3813]], camposKey:1071-1023 2009-02-17 Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors389393, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3814]], camposKey:0021-8979 2008-11-25 Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3815]], camposKey:0013-4651 2008-10-01 Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3817]], camposKey:0022-3093 2008-01-15 Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices393398, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3816]], camposKey:0022-3093 2008-01-15 Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films404408, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11944]], camposKey:0272-9172 2007-12-01 Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording169174, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3818]], camposKey:0268-1242 2007-12-01 Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics13441351, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3819]], camposKey:0013-4651 2007-08-31 Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3820]], camposKey:0026-2714 2007-04-01 Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics653656, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3821]], camposKey:0021-8979 2006-11-23 Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3822]], camposKey:0021-8979 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on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21519]},camposKey: Electrical Characterization of High-K Dielectric Gates for Microelectronic Devices 9789535107644Dielectric Material 1 2012-01-01 IntechOpen, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1864]},camposKey: 349 359 Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics 978-1-56677-903-6- 1 2011-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1066]},camposKey: 1 4 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1063]},camposKey: 223 226 Electrical characterization of high-k based MIS capacitors using flat-band voltage transients 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1070]},camposKey: 227 230 Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1079]},camposKey: 8 11 Study of Atomic Layer Deposited Zirconium Oxide Thin Films by Using Mono-Cyclopentadienyl Based Precursors 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, 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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes 978166544452113th Spanish Conference on Electron Devices, CDE 2021 1 2021-01-01 IEEE]

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Artículos de revista (140)

Ossorio G.; Vinuesa G.; Garcia H.; Sahelices B.; Dueñas S.; Castan H.; Ritala M.; Leskela¿ M.; Kemell M.; Kukli K. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications . Solid-State Electronics 2021; 186.

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Libros (1)

García, Héctor; Ossorio, Óscar G.; Dueñas, Salvador; Castán, Helena. Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices. IEEE; 2020.
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Capítulos de libros (25)

Pérez, E.; García, H.; Castán, H.; Dueñas, S.; Bailon, L.; Moralejo, B.; Martínez, O.; Jiménez, J.; Parra, V. Deep level defects on mono-like and polycrystalline silicon solar cells. En: IEEE Communications Society; Vehicular Technology Society. 2012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia. Piscataway; 2013. p. 313-316.

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Actas de congresos (1)

Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.;Campabadal F.; Garcia H. (2021). Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes. En -. 13th Spanish Conference on Electron Devices, CDE 2021. 1 ed. IEEE; 2021. p. 74-77.
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Proyectos (14)

FABRICACIÓN, CARACTERIZACIÓN, SIMULACIÓN, MODELADO Y APLICACIONES DE DISPOSITIVOS DE CONMUTACIÓN RESISTIVA.. Equipo Investigadores: CASTAN LANASPA, MARIA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP); GARCIA GARCIA, HECTOR; SAHELICES FERNANDEZ, BENJAMIN. Equipo de Trabajo: GONZALEZ OSSORIO, OSCAR; KUKLI ,, KAUPO; AARIK ,, JAAN; TAMM ,, AILE. Personal Contratado: VINUESA SANZ, GUILLERMO. TEC2017-84321-C4-2-R. Entidades colaboradoras AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS (CSIC), UNIVERSIDAD AUTONOMA DE BARCELONA , UNIVERSIDAD DE GRANADA. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: FONDOS FEDER, MINISTERIO DE ECONOMIA Y COMPETITIVIDAD . 01/01/2018-30/09/2021

FEDERMinisterio de Economía y Competitividad
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Convenios (6)

CONVENIO ESPECIFIFICO ENTRE LA UNIVERSIDAD DE VALLADOLID Y TELEFONICA EN EL MARCO DE COLABORACION PARA EL DESARROLLO DE INICIATIVAS CONJUNTAS. ADDENDUM II. Equipo Investigadores: DUEÑAS CARAZO, SALVADOR (IP). Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa).. Entidades Financiadoras: TELEFÓNICA, S.A... 2013-01-01

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Congresos (45)

Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, Sevilla 09/06/2021 - 11/06/2021
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Jimenez-Molinos F.; Garcia H.; Gonzalez M.B.; Duenas S.; Castan H.; Miranda E.; Campabadal F.; Roldan J.B. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Jimenez-Molinos F.; Garcia H.; Gonzalez M.B.; Duenas S.; Castan H.; Miranda E.; Campabadal F.; Roldan J.B. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Jimenez-Molinos F.; Garcia H.; Gonzalez M.B.; Duenas S.; Castan H.; Miranda E.; Campabadal F.; Roldan J.B. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
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Patentes (1)

Salvador Dueñas. Sistema de Energía Solar. P-201130646/PCT/ES2012/070279. 2017
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