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CASTAN LANASPA, MARÍA HELENA

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81893]], camposKey:1369-8001 2024-01-01 A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81892]], camposKey:0167-577X 2024-01-01 Impact of the temperature on the conductive filament morphology in HfO2-based RRAM00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=77893]], camposKey:0022-3727 2023-01-01 Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75337]], camposKey:0167-9317 2023-01-01 Variability and power 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ifccomptador=75469]], camposKey:2079-9292 2022-06-01 Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71430]], camposKey:2079-9292 2022-02-01 Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71431]], camposKey:1996-1944 2022-02-01 Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=68685]], camposKey:0038-1101 2022-01-01 Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor 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ifccomptador=3857]], camposKey:0268-1242 1994-12-01 Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique16371648, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3858]], camposKey:0168-583X 1993-01-01 Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon13621366, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6951]], camposKey:0021-8979 1992-07-15 INFLUENCE OF REFILLING EFFECTS ON DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS IN SE-DOPED ALXGA1-XAS525530, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6949]], camposKey:0038-1101 1992-03-01 ADMITTANCE SPECTROSCOPY IN JUNCTIONS285297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3859]], camposKey:0021-8979 1992-01-01 A study of metal-oxide-semiconductor capacitors fabricated on SF 6 and SF6+Cl2 reactive-ion-etched Si27102716, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=69147]], camposKey:0013-4651 1992-01-01 Characterization of the Electrical Damage due to Polysilicon RIE(SF6+ CL2Plasma) Etching193195, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6955]], camposKey:0021-8979 1991-04-15 CHARACTERIZATION OF THE DX CENTERS IN ALGAAS-SI BY ADMITTANCE SPECTROSCOPY43004305, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3860]], camposKey:0021-8979 1990-12-01 Characterization of the EL2 center in GaAs by optical admittance spectroscopy63096314, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3861]], camposKey:0038-1101 1990-01-01 Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance987992, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3862]], camposKey:0038-1101 1990-01-01 Rie-induced damage in MOS structures14191423, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6950]], camposKey:0038-1101 1989-01-01 Constant-capacitance deep-level optical spectroscopy287293, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level 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CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28730]},camposKey: 91 94 Un clamor general 8461646649Espacio imagen palabra 1 2013-01-01 Instituto Núñez de Arce , CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21519]},camposKey: Electrical Characterization of High-K Dielectric Gates for Microelectronic Devices 9789535107644Dielectric Material 1 2012-01-01 IntechOpen, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21688]},camposKey: A study of tunneling assisted charge exchange on the inner interface of high-k dielectrics s tacks 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21687]},camposKey: Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures 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com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@13578][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=25951]},camposKey: 74 77 Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes 978166544452113th Spanish Conference on Electron Devices, CDE 2021 1 2021-01-01 IEEE]

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Maldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A., García, H.; González, M. B.; Jiménez-Molinos, F.; Campabadal, F.; Miranda, E.; Dueñas, S.; Castán, H.; Roldán, J.B. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2024; 169: num: 107878.

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García, Héctor; Ossorio, Óscar G.; Dueñas, Salvador; Castán, Helena. Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices. IEEE; 2020.
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Al Chawa M.M.; De Benito C.; Castan H.; Duenas S.; Stavrinides S.G.; Tetzlaff R.; Picos R. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux . En: -. 2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST). -; 2022. p. 0-0.

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Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.;Campabadal F.; Garcia H. (2021). Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes. En -. 13th Spanish Conference on Electron Devices, CDE 2021. 1 ed. IEEE; 2021. p. 74-77.
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CARACTERIZACIÓN ELÉCTRICA AVANZADA DE DISPOSITIVOS MEMRISTIVOS. Equipo Investigadores: CASTAN LANASPA, MARÍA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP); GARCIA GARCIA, HECTOR. Equipo de Trabajo: GARCIA OCHOA, EDUARDO; GONZALEZ OSSORIO, OSCAR; VINUESA SANZ, GUILLERMO; TAMM ,, AILE; KALAM ., KRISTJAN; KUKLI ., KAUPO. PID2022-139586NB-C43. Entidades colaboradoras AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS (CSIC), UNIVERSIDAD DE GRANADA, UNIVERSIDAD AUTONOMA DE BARCELONA . Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, FONDOS FEDER, UNION EUROPEA, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/09/2023-31/08/2026

FEDERUnión EuropeaMnisterio de Ciencia e InnovaciónAEI
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CONTRATO POP-UVA 2018 DE ÓSCAR GONZÁLEZ OSSORIO: CARACTERIZACIÓN ELÉCTRICA DE DISPOSITIVOS RRAM, EN EL CENTRO DE TRABAJO UBICADO EN LA ESCUELA DE INGENIERÍA INFORMÁTICA.. CASTAN LANASPA, MARÍA HELENA (Director). GONZALEZ OSSORIO, OSCAR (Beneficiario). 07/10/2021 - 06/03/2023. 42.205,70 EUR.

Banco SantanderUniversidad de Valladolid
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2022 11th International Conference on Modern Circuits and Systems Technologies, MOCAST 2022, Bremen 08/06/2022 - 10/06/2022
(Ponencia). Al Chawa M.M.; De Benito C.; Castan H.; Duenas S.; Stavrinides S.G.; Tetzlaff R.; Picos R. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux
(Ponencia). Al Chawa M.M.; De Benito C.; Castan H.; Duenas S.; Stavrinides S.G.; Tetzlaff R.; Picos R. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux
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Encapsulado Avanzado. 01/07/1997 - 30/09/1997
     Advanced Electronic Packaging Department Bell Laboratories Lucent Technologies. Murray Hill ( ESTADOS UNIDOS DE AMÉRICA )


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RICE-CYL: RED INTERUNIVERSITARIA DE INFORMÁTICA PARA LA CONVERGENCIA EUROPEA EN CASTILLA Y LEÓN. .
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