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CASTAN LANASPA, MARIA HELENA

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
GRUPO DE CARACTERIZACIÓN DE MATERIALES Y DISPOSITIVOS ELECTRÓNICOS ( ELECTRONIC MATERIALS AND DEVICES CHARACTERIZATION GROUP, GCME)
 
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Índice H en Web of Science: 16
Índice H en Scopus: 16
 
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[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55346]], camposKey:1938-6737 2020-01-01 Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications1720, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55347]], camposKey:1938-6737 2020-01-01 Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films36, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52709]], camposKey:0167-9317 2019-01-01 Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40934]], 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silicon Spanish Conference on Electron Devices = 5ª Conferencia de Dispositivos Electronicos (Tarragona, 2005) 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1860]},camposKey: 83 87 Conductance transient comparative analysis of ECR-PECVD deposited SiNx,SiO2/SiNx and SiOxN gamma dielectric films on silicon substrates Fundamentals of novel oxide/semiconductor interfaces 1 2004-03-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1863]},camposKey: 147 152 On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2,Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films Fundamentals of novel oxide/semiconductor interfaces 1 2004-03-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1862]},camposKey: 231 236 Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures Electrically Based Microstructural Characterization III 1 2002-09-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1855]},camposKey: 185 190 Radio-frequency impedance analysis of anodic tantalum pentoxide thin films Electrically Based Microstructural Characterization III 1 2002-09-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1856]},camposKey: 371 378 Fabrication of Ta2O5 thin films by anodic oxidation of tantalum nitride and tantalum silicide: Growing mechanisms, electrical characterization and ULSI M-I-M capacitor performances Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: 1 1999-09-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1861]},camposKey: 87 92 Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor 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Artículos de revista (128)

Garcia H.; Ossorio O.G.; Dueñas S.; Castan H. Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications . ECS Transactions 2020; 97(1): 17-2.
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Libros (3)

García, Héctor; Ossorio, Óscar G.; Dueñas, Salvador; Castán, Helena. Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices. IEEE; 2020.
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Capítulos de libros (23)

Pérez, E.; García, H.; Castán, H.; Dueñas, S.; Bailon, L.; Moralejo, B.; Martínez, O.; Jiménez, J.; Parra, V. Deep level defects on mono-like and polycrystalline silicon solar cells. En: IEEE Communications Society; Vehicular Technology Society. 2012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia. Piscataway; 2013. p. 313-316.
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Proyectos (17)

FABRICACIÓN, CARACTERIZACIÓN, SIMULACIÓN, MODELADO Y APLICACIONES DE DISPOSITIVOS DE CONMUTACIÓN RESISTIVA.. CASTAN LANASPA, MARIA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP); GARCIA GARCIA, HECTOR; SAHELICES FERNANDEZ, BENJAMIN. TEC2017-84321-C4-2-R. FONDOS FEDER, MINISTERIO DE ECONOMIA Y COMPETITIVIDAD , UNIVERSIDAD DE VALLADOLID (UVa) 2018-2021
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Otras ayudas y becas (2)

CONTRATO PREDOC UVA DE ÓSCAR GONZÁLEZ OSSORIO: CARACTERIZACIÓN ELÉCTRICA DE ESTRUCTURAS MIS Y MIM CON DIELÉCTRICOS DE ALTA PERMITIVIDAD PARA SU APLICACIÓN EN RRAMS Y MEMRISTORES. CASTAN LANASPA, MARIA HELENA (Director). GONZALEZ OSSORIO, OSCAR (Beneficiario). 2019 - 31/12/2022. 69.600,00 EUR.
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Tesis doctorales (3)

CABEZA RODRIGUEZ, MIGUEL ÁNGEL A DEPENDABILITY MINDED APPROACH TO VIDEO RECORDING BY MEANS OF VIRTUALIZATION. Universidad de Valladolid; 2017.
 
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Congresos (50)

ECS Transactions, Montreal 10/05/2020 - 14/05/2020
(Ponencia). Garcia H.; Ossorio O.G.; Dueñas S.; Castan H. ECS Transactions
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Estancias de investigación (1)

Encapsulado Avanzado. 01/07/1997 - 30/09/1997
     Advanced Electronic Packaging Department Bell Laboratories Lucent Technologies. Murray Hill ( ESTADOS UNIDOS DE AMÉRICA )
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