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PELAZ MONTES, MARIA LOURDES

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
lourdes.pelaz@uva.es
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Índice H en Web of Science: 23
Índice H en Scopus: 22
 
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[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56852]], camposKey:0022-3093 2019-01-01 Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study2027, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56850]], camposKey:0168-583X 2019-01-01 On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon179183, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56851]], camposKey:1359-6454 2019-01-01 {001} loops in silicon unraveled192201, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56854]], camposKey:0361-5235 2018-01-01 Identification of 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technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=600]], camposKey:1369-8001 2017-01-01 Improved physical models for advanced silicon device processing6279, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6420]], camposKey:0031-9007 2017-01-01 Ultrafast Generation of Unconventional {001 } Loops in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=631]], camposKey:1946-1569 2016-01-01 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion3537, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=596]], camposKey:0022-3727 2016-01-01 Insights on the atomistic 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camposKey:1569-8025 2014-01-01 Introduction: Special Issue on Process Modeling Introduction12, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2694]], camposKey:1882-0778 2014-01-01 Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=612]], camposKey:1569-8025 2014-01-01 Modeling of defects, dopant diffusion and clustering in silicon4058, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56910]], camposKey:1946-1569 2013-01-01 Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach3336, 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ifccomptador=39864]], camposKey:0003-6951 2006-05-08 Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=613]], camposKey:1742-6588 2006-01-01 An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon2840, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2691]], camposKey:0018-9383 2006-01-01 Boron pocket and channel deactivation in nMOS transistors with SPER junctions7177, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9105]], camposKey:0094-243X 2006-01-01 Fluorine profile distortion upon annealing by the presence of a CVD grown boron box290, 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SISPAD 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=307]},camposKey: 489 492 Dopant redistribution effects in preamorphized silicon during low temperature annealing IEEE International Electron Devices Meeting 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1960]},camposKey: 31 40 Modeling of dopant and defect interactions in Si process simulators Defect and Diffusion Forum 1 2003-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=96]},camposKey: 879 882 A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node Electron Devices Meeting 2002 International 1 2002-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=94]},camposKey: 26 29 The role of incomplete interstitial-vacancy recombination on silicon amorphization Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2094]},camposKey: 784 788 Defects and diffusion in MeV implanted silicon Application of Accelerators in Research and Industry: Proceedings of the Fifteenth International Conference: Denton, Texas 1 1999-01-01 AIP Publishing , CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2092]},camposKey: 75 86 Dose, energy, and ion species dependence of the effective plusfactor for transient enhanced diffusion Process Physics Modeling in Semi Conductor Technology: Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology 1 1999-01-01 The Electrochemical Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1929]},camposKey: 43 53 Atomistic modeling of point and extended defects in crystalline materials Silicon Front-End Technology 1 1998-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2095]},camposKey: 1232 1240 Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation Silicon Materials Science and Technology: Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology, Volume II 1 1998-01-01 The Electrochemical Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1925]},camposKey: 341 346 Atomistic model of transient enhanced diffusion and clustering of boron in silicon Defects and Diffusion in Silicon Processing 1 1997-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2093]},camposKey: 467 470 Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions International Electron Devices Meeting. IEDM Technical Digest 1 1997-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21570]},camposKey: 363 368 Design of vertical power MOSFETs in SiC 1995 20th International Conference on Microelectronics: Proceedings of International Conference on Microelectronics 1 1995-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1928]},camposKey: 151 156 On the Forward Conduction Mechanisms in SiC P-N Junctions Diamond, Sic and Nitride Wide Bandgap Semiconductors: Symposium Held April 4-8, 1994, San Francisco, California, U.S.A. 1 1994-01-01 Cambridge][][][][][][][][][][com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145636667]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145631568]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145629592]]][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@37c9fd3a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2e100773, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1e5926a5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6ef82a33, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@669ab32f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@366a0749, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6b046587, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6da5b8f4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1b11d369, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2f4ea061, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5303588a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@a9f69a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@167cf8cd, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@66b26643, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4a57ed61, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@52a1a168, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@716bdd39, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6089035b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@433b7ce0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7683789b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@316344e6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6c40715e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7ad309d7, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@352b4140, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2ac8ec05, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6cff5234, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6e6e0bd3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7aca8248][][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@3c986d][][][][][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f933], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414d41], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f73e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413345], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413670], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ffc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41250c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4604c5], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411e1e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411cf2], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f436], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f464], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f372]][][][][]

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Artículos de revista (123)

Santos I.; Aboy M.; Marques L.A.; Lopez P.; Pelaz L. Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study . JOURNAL OF NON-CRYSTALLINE SOLIDS 2019; 503-504(0): 2-27.
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Capítulos de libros (45)

Pedro López ; M. Aboy ; I. Muñoz ; I. Santos ; L. A. Marqués ; C. Couso ; M. Ullán ; L. Pelaz. ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions. En: 2018 Spanish Conference on Electron Devices (CDE). IEEE; 2018. p. 1-4.
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Proyectos (17)

ESTUDIO DE PROCESOS TECNOLÓGICOS AVANZADOS PARA LA FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS NANOMÉTRICOS MEDIANTE TÉCNICAS DE SIMULACIÓN PREDICTIVA. MARQUES CUESTA, LUIS ALBERTO (IP); SANTOS TEJIDO, IVAN; HERNANDEZ MANGAS, JESUS MANUEL; ARIAS ALVAREZ, JESUS; RUBIO GARCIA, JOSE EMILIANO; VICENTE ANTON, JOSE; RUIZ PRIETO, MANUEL; ENRIQUEZ GIRAUDO, MARIA LOURDES; PELAZ MONTES, MARIA LOURDES; ABOY CEBRIAN, MARIA; LOPEZ MARTIN, PEDRO; PINACHO GOMEZ, RUTH. VA119G18. UNIVERSIDAD DE VALLADOLID, JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2018-2020
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Convenios (1)

ASESORAMIENTO PARA EL DESARROLLO DE DISPOSITIVOS TECNOLÓGICOS PARA CONGRESOS, EVENTOS Y MUSEOS. . PELAZ MONTES, MARIA LOURDES (IP); MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA; LOPEZ MARTIN, PEDRO. EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL, FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL. 2014
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OTROS

Tesis doctorales (3)

SANTOS TEJIDO, IVAN MULTISCALE MODELING OF DOPANT IMPLANTATION AND DIFFUSION IN CRYSTALLINE AND AMORPHOUS SILICON. Universidad de Valladolid; 2010.
 
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Congresos (28)

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca 14/11/2018 - 16/11/2018
(Ponencia). Martin L.; Santos I.; Lopez P.; Marques L.; Aboy M.; Pelaz L. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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