Inicio > PELAZ MONTES, MARIA LOURDES

PELAZ MONTES, MARIA LOURDES

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
lourdes@ele.uva.es

Índice H en Web of Science: 22
Índice H en Scopus: 22
 
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[][ PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE600 , ARE , 2017-05-01 , REC , 62 , 79 , 62 , 0 , CIE , PUB , Improved physical models for advanced silicon device processing , MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE620 , ARE , 2017-01-01 , REC , 0 , 0 , 0 , 0 , CIE , PUB , Characterization of amorphous Si generated through classical molecular dynamics simulations , 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) , Santos, Ivan; Lopez, Pedro; Aboy, Maria; Marques, Luis A.; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE630 , ARE , 2017-01-01 , REC , 0 , 0 , 0 , 0 , CIE , PUB , Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique , 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) , Lopez, Pedro; Ruiz, D. C.; Santos, I.; Aboy, M.; Marques, L. A.; Trochet, M.; Mousseau, N.; Pelaz, L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE596 , ARE , 2016-02-25 , REC , 0 , 0 , 49 , 0 , CIE , PUB , Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations , JOURNAL OF PHYSICS D-APPLIED PHYSICS , Santos, Ivan; Aboy, Maria; Lopez, Pedro; Marques, Luis A.; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE599 , ARE , 2016-02-01 , REC , 235 , 238 , 42 , 0 , CIE , PUB , Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon , MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , Marques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE631 , ARE , 2016-01-01 , REC , 35 , 37 , 0 , 0 , CIE , PUB , Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion , 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) , Santos, I.; Aboy, M.; Marques, L. A.; Lopez, P.; Ruiz, M.; Pelaz, L.; Hernandez-Diaz, A. M.; Castrillo, P. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE628 , ARE , 2015-06-01 , REC , 148 , 151 , 352 , 0 , CIE , PUB , Atomistic modeling of ion implantation technologies in silicon , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Marques, Luis A.; Santos, Ivan; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6589 , ARE , 2015-01-01 , REC , 0 , 0 , 352 , 0 , CIE , PUB , A detailed approach for the classification and statistical analysis of irradiation induced defects , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Lopez, Pedro; Santos, Ivan; Aboy, Maria; Marques, Luis A.; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE612 , ARE , 2014-03-01 , REC , 40 , 58 , 13 , 0 , CIE , PUB , Modeling of defects, dopant diffusion and clustering in silicon , JOURNAL OF COMPUTATIONAL ELECTRONICS , Aboy, Maria; Santos, I.; Pelaz, L.; Marques, L. A.; Lopez, P. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9084 , ARE , 2014-03-01 , REC , 1 , 2 , 13 , 0 , CIE , PUB , Special Issue on Process Modeling Introduction , JOURNAL OF COMPUTATIONAL ELECTRONICS , Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2694 , ARE , 2014-02-01 , REC , 0 , 0 , 7 , 0 , CIE , PUB , Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing , APPLIED PHYSICS EXPRESS , Fisicaro, Giuseppe; Pelaz, Lourdes; Aboy, Maria; Lopez, Pedro; Italia, Markus; Huet, Karim; Cristiano, Filadelfo; Essa, Zahi; Yang, Qui; Bedel-Pereira, Elena; Quillec, Maurice; La Magna, Antonino , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9099 , ARE , 2012-09-27 , REC , 0 , 0 , 86 , 0 , CIE , PUB , Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon , PHYSICAL REVIEW E , Fisicaro, G.; Pelaz, L.; Lopez, P.; La Magna, A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE593 , ARE , 2012-02-01 , REC , 0 , 0 , 111 , 0 , CIE , PUB , Molecular dynamics simulation of the regrowth of nanometric multigate Si devices , JOURNAL OF APPLIED PHYSICS , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Duffy, Ray , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE623 , ARE , 2012-02-01 , REC , 0 , 0 , 111 , 0 , CIE , PUB , Molecular dynamics simulations of damage production by thermal spikes in Ge , JOURNAL OF APPLIED PHYSICS , Lopez, Pedro; Pelaz, Lourdes; Santos, Ivan; Marques, Luis A.; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9085 , ARE , 2012-01-01 , REC , 0 , 0 , 15 , 0 , CIE , PUB , Codiffusion of Phosphorus and Carbon in Preamorphized Ultrashallow Junctions , ELECTROCHEMICAL AND SOLID STATE LETTERS , Ling, Y. T.; Huang, M. J.; Chang, R. D.; Pelaz, L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9090 , ARE , 2012-01-01 , REC , 221 , 224 , 1496 , 0 , CIE , PUB , Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes , ION IMPLANTATION TECHNOLOGY 2012 , Fisicaro, G.; Pelaz, L.; Lopez, P.; Italia, M.; Huet, K.; Venturini, J.; La Magna, A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE592 , ARE , 2012-01-01 , REC , 229 , 232 , 1496 , 0 , CIE , PUB , Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study , ION IMPLANTATION TECHNOLOGY 2012 , Santos, I.; Marques, L. A.; Pelaz, L.; Lopez, P.; Aboy, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2695 , ARE , 2011-10-01 , REC , 0 , 0 , 110 , 0 , CIE , PUB , Kinetics of large B clusters in crystalline and preamorphized silicon , JOURNAL OF APPLIED PHYSICS , Aboy, Maria; Pelaz, Lourdes; Bruno, Elena; Mirabella, Salvo; Boninelli, Simona , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE578 , ARE , 2011-09-26 , REC , 0 , 0 , 99 , 0 , CIE , PUB , The curious case of thin-body Ge crystallization , APPLIED PHYSICS LETTERS , Duffy, R.; Shayesteh, M.; McCarthy, B.; Blake, A.; White, M.; Scully, J.; Yu, R.; Kelleher, A. -M.; Schmidt, M.; Petkov, N.; Pelaz, L.; Marques, L. A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE624 , ARE , 2011-01-01 , REC , 0 , 0 , 83 , 0 , CIE , PUB , Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing , PHYSICAL REVIEW B , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Colombo, Luciano , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2696 , ARE , 2010-07-01 , REC , 266 , 284 , 23 , 0 , CIE , PUB , Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions , INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9083 , ARE , 2010-02-26 , REC , 2299 , 2300 , 518 , 0 , CIE , PUB , Symposium I: Silicon and germanium issues for future CMOS devices Preface , THIN SOLID FILMS , Pelaz, Lourdes; Mirabella, Salvo; Larsen, Arne Nylandsted , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE603 , ARE , 2010-01-01 , REC , 176 , 180 , 1321 , 0 , CIE , PUB , Modeling of defect generation and dissolution in ion implanted semiconductors , ION IMPLANTATION TECHNOLOGY 2010 , Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE629 , ARE , 2010-01-01 , REC , 0 , 0 , 81 , 0 , CIE , PUB , Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency , PHYSICAL REVIEW B , Santos, I.; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz, L.; Marques, L. A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE601 , ARE , 2010-01-01 , REC , 0 , 0 , 28 , 0 , CIE , PUB , Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Santos, Ivan; Lopez, Pedro; Duffy, Ray , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE598 , ARE , 2009-12-01 , REC , 323 , 359 , 72 , 0 , CIE , PUB , Front-end process modeling in silicon , EUROPEAN PHYSICAL JOURNAL B , Pelaz, L.; Marques, L. A.; Aboy, M.; Lopez, P.; Santos, I. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE604 , ARE , 2009-04-15 , REC , 0 , 0 , 105 , 0 , CIE , PUB , Improved atomistic damage generation model for binary collision simulations , JOURNAL OF APPLIED PHYSICS , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE621 , ARE , 2009-01-01 , REC , 411 , 418 , 25 , 0 , CIE , PUB , Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization , ANALYTICAL TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND PROCESS CHARACTERIZATION 6 (ALTECH 2009) , Pelaz, Lourdes; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2697 , ARE , 2009-01-01 , REC , 479 , 0 , 0 , 0 , CIE , PUB , Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices , 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING , Pelaz, L.; Marques, L.; Aboy, M.; Lopez, P.; Santos, I.; Duffy, R. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2699 , ARE , 2008-12-05 , REC , 207 , 210 , 154 , 0 , CIE , PUB , Atomistic modeling of FnVm complexes in pre-amorphized Si , MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , Lopez, Pedro; Pelaz, Lourdes; Aboy, Maria; Impellizeri, G.; Mirabella, S.; Priolo, F.; Napolitani, E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2698 , ARE , 2008-12-05 , REC , 247 , 251 , 154 , 0 , CIE , PUB , Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects , MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S.; Napolitani, E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9106 , ARE , 2008-05-01 , REC , 0 , 0 , 103 , 0 , CIE , PUB , Si interstitial contribution of F(+) implants in crystalline Si , JOURNAL OF APPLIED PHYSICS , Lopez, Pedro; Pelaz, Lourdes; Duffy, R.; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE609 , ARE , 2008-01-01 , REC , 237 , 248 , 1070 , 0 , CIE , PUB , Atomistic Simulation Techniques in Front-End Processing , DOPING ENGINEERING FOR FRONT-END PROCESSING , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9107 , ARE , 2008-01-01 , REC , 377 , 381 , 26 , 0 , CIE , PUB , Evolution of fluorine and boron profiles during annealing in crystalline Si , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Lopez, Pedro; Pelaz, Lourdes; Duffy, Ray; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9109 , ARE , 2008-01-01 , REC , 279 , 0 , 1070 , 0 , CIE , PUB , F+ Implants in Crystalline Si: The Si Interstitial Contribution , DOPING ENGINEERING FOR FRONT-END PROCESSING , Lopez, Pedro; Pelaz, Lourdes; Duffy, Ray; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE615 , ARE , 2008-01-01 , REC , 223 , 0 , 1070 , 0 , CIE , PUB , First Principles Study of Boron in Amorphous Silicon , DOPING ENGINEERING FOR FRONT-END PROCESSING , Santos, Ivan; Windl, Wolfgang; Pelaz, Lourdes; Marques, Luis Alberto , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11428 , ARE , 2008-01-01 , COP , 71 , 76 , 139 , 0 , CIE , PUB , Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation , THEORY, MODELING AND NUMERICAL SIMULATION OF MULTI-PHYSICS MATERIALS BEHAVIOR , Santos, Ivan; Alberto Marques, Luis; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE595 , ARE , 2008-01-01 , REC , 71 , 76 , 139 , 0 , CIE , PUB , Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation , THEORY, MODELING AND NUMERICAL SIMULATION OF MULTI-PHYSICS MATERIALS BEHAVIOR , Santos, Ivan; Alberto Marques, Luis; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE606 , ARE , 2008-01-01 , REC , 0 , 0 , 78 , 0 , CIE , PUB , Structural transformations from point to extended defects in silicon: A molecular dynamics study , PHYSICAL REVIEW B , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE625 , ARE , 2007-10-01 , REC , 0 , 0 , 76 , 0 , CIE , PUB , Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects , PHYSICAL REVIEW B , Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE616 , ARE , 2007-05-01 , REC , 0 , 0 , 101 , 0 , CIE , PUB , Atomistic analysis of the annealing behavior of amorphous regions in silicon , JOURNAL OF APPLIED PHYSICS , Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2693 , ARE , 2007-04-01 , REC , 152 , 156 , 257 , 0 , CIE , PUB , Boron diffusion and activation in SOI and bulk Si: The role of the buried interface , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Aboy, Maria; Pelaz, Lourdes; Montserrat, J.; Bermudez, F. J.; Hamilton, J. J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE610 , ARE , 2007-02-01 , REC , 110 , 113 , 255 , 0 , CIE , PUB , Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE575 , ARE , 2007-02-01 , REC , 242 , 246 , 255 , 0 , CIE , PUB , Molecular dynamics study of B18H22 cluster implantation into silicon , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE602 , ARE , 2007-02-01 , REC , 95 , 100 , 255 , 0 , CIE , PUB , Multiscale modeling of radiation damage and annealing in Si , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE574 , ARE , 2006-11-01 , REC , 0 , 0 , 74 , 0 , CIE , PUB , Characterization of octadecaborane implantation into Si using molecular dynamics , PHYSICAL REVIEW B , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Venezia, V. C. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE581 , ARE , 2006-11-01 , REC , 0 , 0 , 74 , 0 , CIE , PUB , Modeling of damage generation mechanisms in silicon at energies below the displacement threshold , PHYSICAL REVIEW B , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE611 , ARE , 2006-09-01 , REC , 2432 , 2436 , 24 , 0 , CIE , PUB , Atomistic modeling of dopant implantation, diffusion, and activation , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Pelaz, L.; Aboy, M.; Lopez, P.; Marques, L. A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE626 , ARE , 2006-05-08 , REC , 0 , 0 , 88 , 0 , CIE , PUB , Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth , APPLIED PHYSICS LETTERS , Aboy, M; Pelaz, L; Lopez, P; Marques, LA; Duffy, R; Venezia, VC , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE613 , ARE , 2006-01-01 , REC , 284 , 0 , 26 , 0 , CIE , PUB , An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon , EMAG-NANO 2005: IMAGING, ANALYSIS AND FABRICATION ON THE NANOSCALE , Edmondson, P. D.; Birtcher, R. C.; Vishnyakov, V. M.; Lopez, P.; Pelaz, L.; Marques, L. A.; Donnelly, S. E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2691 , ARE , 2006-01-01 , REC , 71 , 77 , 53 , 0 , CIE , PUB , Boron pocket and channel deactivation in nMOS transistors with SPER junctions , IEEE TRANSACTIONS ON ELECTRON DEVICES , Duffy, R; Aboy, M; Venezia, VC; Pelaz, L; Severi, S; Pawlak, BJ; Eyben, P; Janssens, T; Vandervorst, W; Loo, J; Roozeboom, F , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9105 , ARE , 2006-01-01 , REC , 29 , 0 , 866 , 0 , CIE , PUB , Fluorine profile distortion upon annealing by the presence of a CVD grown boron box , ION IMPLANTATION TECHNOLOGY , Lopez, P.; Pelaz, L.; Duffy, R.; Meunier-Beillarcf, P.; van der Tak, K.; Roozeboom, F.; Maas, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6590 , ARE , 2006-01-01 , REC , 0 , 0 , 253 , 1-2 , CIE , PUB , Physical insight into ultra-shallow junction formation through atomistic modeling , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, L.; Aboy, M.; Lopez, P.; Marques, L. A.; Santos, I. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE582 , ARE , 2005-12-05 , REC , 379 , 382 , 124 , 0 , CIE , PUB , Amorphous layer depth dependence on implant parameters during Si self-implantation , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Lopez, P; Pelaz, L; Marques, LA; Barbolla, J; Gossmann, HJL; Agarwal, A; Kimura, K; Matsushita, T , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE622 , ARE , 2005-12-05 , REC , 72 , 80 , 124 , 0 , CIE , PUB , Atomistic simulations in Si processing: Bridging the gap between atoms and experiments , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Marques, LA; Pelaz, L; Lopez, P; Aboy, M; Santos, I; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2692 , ARE , 2005-12-05 , REC , 205 , 209 , 124 , 0 , CIE , PUB , Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Aboy, M; Pelaz, L; Barbolla, J; Duffy, R; Venezia, VC , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9091 , ARE , 2005-12-05 , REC , 245 , 248 , 124 , 0 , CIE , PUB , Boron diffusion in amorphous silicon , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Venezia, VC; Duffy, R; Pelaz, L; Hopstaken, MJP; Maas, GCJ; Dao, T; Tamminga, Y; Graat, P , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9093 , ARE , 2005-12-05 , REC , 1 , 2 , 124 , 0 , CIE , PUB , E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Pelaz, L; Duffy, R; Cristiano, F; Colombeau, B; Uppal, S , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE627 , ARE , 2005-12-05 , REC , 372 , 375 , 124 , 0 , CIE , PUB , Molecular dynamics characterization of as-implanted damage in silicon , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Santos, I; Marques, LA; Pelaz, L; Lopez, P; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE607 , ARE , 2005-12-01 , REC , 501 , 505 , 241 , 0 , CIE , PUB , Atomistic modeling of ion beam induced amorphization in silicon , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, L; Marques, LA; Lopez, P; Santos, L; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE597 , ARE , 2005-05-15 , REC , 0 , 0 , 97 , 0 , CIE , PUB , Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon , JOURNAL OF APPLIED PHYSICS , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J; Duffy, R , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE576 , ARE , 2005-02-01 , REC , 0 , 0 , 71 , 0 , CIE , PUB , Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial , PHYSICAL REVIEW B , Marques, LA; Pelaz, L; Castrillo, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE608 , ARE , 2005-01-17 , REC , 0 , 0 , 86 , 0 , CIE , PUB , Role of silicon interstitials in boron cluster dissolution , APPLIED PHYSICS LETTERS , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J; Duffy, R; Venezia, VC; Griffin, PB , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE619 , ARE , 2005-01-01 , REC , 112 , 117 , 33 , 0 , CIE , PUB , A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework , COMPUTATIONAL MATERIALS SCIENCE , Marques, LA; Pelaz, L; Aboy, M; Lopez, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE617 , ARE , 2005-01-01 , REC , 92 , 105 , 33 , 0 , CIE , PUB , Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation , COMPUTATIONAL MATERIALS SCIENCE , Pelaz, L; Marques, LA; Aboy, M; Lopez, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE594 , ARE , 2004-12-15 , REC , 82 , 87 , 114 , 0 , CIE , PUB , Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Lopez, P; Pelaz, L; Marques, LA; Santos, I; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE618 , ARE , 2004-12-15 , REC , 193 , 197 , 114 , 0 , CIE , PUB , The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J; Venezia, VC; Duffy, R; Griffin, PB , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE573 , ARE , 2004-12-01 , REC , 5947 , 5976 , 96 , 0 , CIE , PUB , Ion-beam-induced amorphization and recrystallization in silicon , JOURNAL OF APPLIED PHYSICS , Pelaz, L; Marques, LA; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9092 , ARE , 2004-05-24 , REC , 4283 , 4285 , 84 , 0 , CIE , PUB , Boron diffusion in amorphous silicon and the role of fluorine , APPLIED PHYSICS LETTERS , Duffy, R; Venezia, VC; Heringa, A; Pawlak, BJ; Hopstaken, MJP; Maas, GCJ; Tamminga, Y; Dao, T; Roozeboom, F; Pelaz, L , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9088 , ARE , 2004-03-01 , REC , 0 , 0 , 69 , 0 , CIE , PUB , Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 degrees C , PHYSICAL REVIEW B , Venezia, VC; Pelaz, L; Gossmann, HJL; Agarwal, A; Haynes, TE , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE583 , ARE , 2004-02-01 , REC , 100 , 104 , 216 , 0 , CIE , PUB , Atomistic analysis of the ion beam induced defect evolution , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Aboy, M; Pelaz, L; Marques, LA; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE590 , ARE , 2004-02-01 , REC , 41 , 45 , 216 , 0 , CIE , PUB , Atomistic modeling of ion beam induced amorphization in silicon , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, L; Marques, LA; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE588 , ARE , 2004-02-01 , REC , 57 , 61 , 216 , 0 , CIE , PUB , The laser annealing induced phase transition in silicon: a molecular dynamics study , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Marques, LA; Pelaz, L; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE605 , ARE , 2004-01-01 , REC , 307 , 312 , 810 , 0 , CIE , PUB , Atomistic analysis of the role of silicon interstitials in boron cluster dissolution , SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE614 , ARE , 2004-01-01 , REC , 431 , 436 , 810 , 0 , CIE , PUB , Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers. , SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY , Pelaz, L; Marques, LA; Lopez, P; Santos, L; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3270 , ARE , 2003-12-01 , REC , 31 , 40 , 221-223 , 0 , CIE , PUB , Modeling of dopant and defect interactions in Si process simulators , DEFECTS AND DIFFUSION IN SEMICONDUCTORS: AN ANNUAL RETROSPECTIVE VI , Pelaz, L; Marques, LA; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE584 , ARE , 2003-11-17 , REC , 4166 , 4168 , 83 , 0 , CIE , PUB , Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles , APPLIED PHYSICS LETTERS , Aboy, M; Pelaz, L; Marques, LA; Barbolla, J; Mokhberi, A; Takamura, Y; Griffin, PB; Plummer, JD , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE586 , ARE , 2003-09-26 , REC , 0 , 0 , 91 , 0 , CIE , PUB , Microscopic description of the irradiation-induced amorphization in silicon , PHYSICAL REVIEW LETTERS , Marques, LA; Pelaz, L; Aboy, M; Enriquez, L; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE589 , ARE , 2003-07-15 , REC , 1013 , 1018 , 94 , 0 , CIE , PUB , Atomistic analysis of defect evolution and transient enhanced diffusion in silicon , JOURNAL OF APPLIED PHYSICS , Aboy, M; Pelaz, L; Marques, LA; Enriquez, L; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE579 , ARE , 2003-03-31 , REC , 2038 , 2040 , 82 , 0 , CIE , PUB , Atomistic modeling of amorphization and recrystallization in silicon , APPLIED PHYSICS LETTERS , Pelaz, L; Marques, LA; Aboy, M; Barbolla, J; Gilmer, GH , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE585 , ARE , 2003-03-01 , REC , 1 , 5 , 27 , 0 , CIE , PUB , Monte Carlo modeling of amorphization resulting from ion implantation in Si , COMPUTATIONAL MATERIALS SCIENCE , Pelaz, L; Marques, LA; Aboy, M; Gilmer, G; Bailon, LA; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE577 , ARE , 2003-03-01 , REC , 6 , 9 , 27 , 0 , CIE , PUB , The role of the bond defect on silicon amorphization: a molecular dynamics study , COMPUTATIONAL MATERIALS SCIENCE , Marques, LA; Pelaz, L; Aboy, M; Vicente, J; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9108 , ARE , 2003-01-13 , REC , 215 , 217 , 82 , 0 , CIE , PUB , Enhanced low temperature electrical activation of B in Si , APPLIED PHYSICS LETTERS , Kalyanaraman, R; Venezia, VC; Pelaz, L; Haynes, TE; Gossmann, HJL; Rafferty, CS , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9100 , ARE , 2001-08-27 , REC , 1273 , 1275 , 79 , 0 , CIE , PUB , Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon , APPLIED PHYSICS LETTERS , Venezia, VC; Pelaz, L; Gossmann, HJL; Haynes, TE; Rafferty, CS , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE565 , ARE , 2001-07-15 , REC , 0 , 0 , 64 , 0 , CIE , PUB , Stability of defects in crystalline silicon and their role in amorphization , PHYSICAL REVIEW B , Marques, LA; Pelaz, L; Hernandez, J; Barbolla, J; Gilmer, GH , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE580 , ARE , 2001-06-01 , REC , 12 , 16 , 180 , 0 , CIE , PUB , Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, L; Marques, LA; Gilmer, GH; Jaraiz, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9097 , ARE , 2000-09-01 , REC , 3494 , 3501 , 147 , 0 , CIE , PUB , Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion , JOURNAL OF THE ELECTROCHEMICAL SOCIETY , Hobler, G; Pelaz, L; Rafferty, CS , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9103 , ARE , 2000-07-01 , REC , 1401 , 1405 , 47 , 0 , CIE , PUB , Use of transient enhanced diffusion to tailor boron out-diffusion , IEEE TRANSACTIONS ON ELECTRON DEVICES , Vuong, HH; Xie, YH; Frei, MR; Hobler, G; Pelaz, L; Rafferty, CS , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7770 , ARE , 2000-03-01 , REC , 59 , 63 , 3 , 0 , CIE , PUB , Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data , MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , Jaraiz, M; Rubio, E; Castrillo, P; Pelaz, L; Bailon, L; Barbolla, J; Gilmer, GH; Rafferty, CS , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9095 , ARE , 1999-08-23 , REC , 1083 , 1085 , 75 , 0 , CIE , PUB , Boron pileup and clustering in silicon-on-insulator films , APPLIED PHYSICS LETTERS , Vuong, HH; Gossmann, HJ; Pelaz, L; Celler, GK; Jacobson, DC; Barr, D; Hergenrother, J; Monroe, D; Venezia, VC; Rafferty, CS; Hillenius, SJ; McKinley, J; Stevie, FA; Granger, C , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7744 , ARE , 1999-08-02 , REC , 662 , 664 , 75 , 0 , CIE , PUB , Activation and deactivation of implanted B in Si , APPLIED PHYSICS LETTERS , Pelaz, L; Venezia, VC; Gossmann, HJ; Gilmer, GH; Fiory, AT; Rafferty, CS; Jaraiz, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7742 , ARE , 1999-06-14 , REC , 3657 , 3659 , 74 , 0 , CIE , PUB , B cluster formation and dissolution in Si: A scenario based on atomistic modeling , APPLIED PHYSICS LETTERS , Pelaz, L; Gilmer, GH; Gossmann, HJ; Rafferty, CS; Jaraiz, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9102 , ARE , 1999-06-01 , REC , 172 , 176 , 153 , 0 , CIE , PUB , Continuum treatment of spatial correlation in damage annealing , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Hobler, G; Pelaz, L; Rafferty, CS , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7756 , ARE , 1999-04-05 , REC , 2017 , 2019 , 74 , 0 , CIE , PUB , Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion , APPLIED PHYSICS LETTERS , Pelaz, L; Gilmer, GH; Venezia, VC; Gossmann, HJ; Jaraiz, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9098 , ARE , 1999-03-01 , REC , 1299 , 1301 , 74 , 0 , CIE , PUB , Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon , APPLIED PHYSICS LETTERS , Venezia, VC; Haynes, TE; Agarwal, A; Pelaz, L; Gossmann, HJ; Jacobson, DC; Eaglesham, DJ , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9094 , ARE , 1999-01-01 , REC , 784 , 788 , 475 , 0 , CIE , PUB , Defects and diffusion in MeV implanted silicon , APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, PTS 1 AND 2 , Venezia, VC; Haynes, TE; Agarwal, A; Gossmann, HJ; Pelaz, L; Jacobson, DC; Eaglesham, DJ; Duggan, JL , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9096 , ARE , 1998-09-30 , REC , 269 , 274 , 253 , 0 , CIE , PUB , Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion , MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING , Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Jacobson, DC; Poate, JM; Haynes, TE , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7757 , ARE , 1998-09-07 , REC , 1421 , 1423 , 73 , 0 , CIE , PUB , Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model , APPLIED PHYSICS LETTERS , Pelaz, L; Gilmer, GH; Jaraiz, M; Herner, SB; Gossmann, HJ; Eaglesham, DJ; Hobler, G; Rafferty, CS; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7746 , ARE , 1998-06-01 , REC , 6182 , 6184 , 83 , 0 , CIE , PUB , Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model , JOURNAL OF APPLIED PHYSICS , Herner, SB; Gossmann, HJ; Pelaz, LP; Gilmer, GH; Jaraiz, M; Jacobson, DC; Eaglesham, DJ , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9087 , ARE , 1998-05-01 , REC , 0 , 0 , 42 , 0 , CIE , PUB , Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon , SOLID-STATE ELECTRONICS , Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Herner, SB; Jacobson, DC; Haynes, TE; Simonton, R , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7762 , ARE , 1998-01-01 , REC , 43 , 53 , 532 , 0 , CIE , PUB , Atomistic modeling of point and extended defects in crystalline materials , SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING , Jaraiz, M; Pelaz, L; Rubio, E; Barbolla, J; Gilmer, GH; Eaglesham, DJ; Gossmann, HJ; Poate, JM , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9104 , ARE , 1997-11-24 , REC , 3141 , 3143 , 71 , 0 , CIE , PUB , Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials , APPLIED PHYSICS LETTERS , Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Jacobson, DC; Haynes, TE; Erokhin, YE , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7748 , ARE , 1997-04-28 , REC , 2285 , 2287 , 70 , 0 , CIE , PUB , B diffusion and clustering in ion implanted Si: The role of B cluster precursors , APPLIED PHYSICS LETTERS , Pelaz, L; Jaraiz, M; Gilmer, GH; Gossmann, HJ; Rafferty, CS; Eaglesham, DJ; Poate, JM , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7750 , ARE , 1997-01-01 , REC , 341 , 346 , 469 , 0 , CIE , PUB , Atomistic model of transient enhanced diffusion and clustering of boron in silicon , DEFECTS AND DIFFUSION IN SILICON PROCESSING , Pelaz, L; Gilmer, GH; Jaraiz, M; Gossmann, HJ; Rafferty, CS; Eaglesham, DJ; Poate, JM , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE591 , ARE , 1996-05-01 , REC , 156 , 159 , 112 , 0 , CIE , PUB , Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Rubio, JE; Marques, LA; Pelaz, L; Jaraiz, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9101 , ARE , 1996-02-01 , REC , 43 , 51 , 27 , 0 , CIE , PUB , Avalanche breakdown of high-voltage p-n junctions of SIC , MICROELECTRONICS JOURNAL , Pelaz, L; Orantes, JL; Vicente, J; Bailon, L; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE3855 , ARE , 1996-01-01 , REC , 310 , 315 , 79 , 1 , CIE , PUB , Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions , JOURNAL OF APPLIED PHYSICS , Quintanilla Sierra, L.; Dueñas, S.; Castán, E.; Pinacho, R.; Peláez, L.; Bailon, L.; Barbolla, J. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE587 , ARE , 1995-11-01 , REC , 1191 , 1193 , 11 , 0 , CIE , PUB , Detailed computer simulation of ion implantation processes into crystals , MATERIALS SCIENCE AND TECHNOLOGY , Arias, J; Jaraiz, M; Rubio, JE; Pelaz, L; Marques, LA; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7759 , ARE , 1995-08-01 , REC , 228 , 231 , 102 , 0 , CIE , PUB , LOW-ENERGY ION-IMPLANTATION SIMULATION USING A MODIFIED BINARY COLLISION APPROXIMATION CODE , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , ARIAS, J; JARAIZ, M; PELAZ, L; BAILON, LA; BARBOLLA, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9089 , ARE , 1994-12-01 , REC , 7384 , 7389 , 76 , 0 , CIE , PUB , SATURATION OF GENERATION-RECOMBINATION CURRENT FOR VERY SMALL RECOMBINATION TIMES , JOURNAL OF APPLIED PHYSICS , PELAZ, L; ORANTES, JL; ENRIQUEZ, L; BAILON, L; BARBOLLA, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9086 , ARE , 1994-04-01 , REC , 587 , 591 , 41 , 0 , CIE , PUB , THE POOLE-FRENKEL EFFECT IN 6H-SIC DIODE CHARACTERISTICS , IEEE TRANSACTIONS ON ELECTRON DEVICES , PELAZ, L; ORANTES, JL; VINCENTE, J; BAILON, LA; BARBOLLA, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE7761 , ARE , 1994-01-01 , REC , 151 , 156 , 339 , 0 , CIE , PUB , ON THE FORWARD CONDUCTION MECHANISMS IN SIC P-N JUNCTIONS , DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS , PELAZ, L; VINCENTE, J; JARAIZ, M; BAILON, L; BARBOLLA, J , S ) ) ) ][ PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP99 , CAP , null , , 176 , 180 , , , , , Modeling of defect generation and dissolution in ion implanted semiconductors , , Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP109 , CAP , null , , 411 , 418 , , , , , Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization , , Pelaz, Lourdes; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP313 , CAP , null , , 479 , 0 , , , , , Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices , , Pelaz, L.; Marques, L.; Aboy, M.; Lopez, P.; Santos, I.; Duffy, R. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP108 , CAP , null , , 12 , 15 , , , , , Atomistic simulations of the effect of implant parameters on Si damage , , Lopez, Pedro; Pelaz, Lourdes; Marques, Luis Alberto; Aboy, Maria; Santos, Ivan , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP309 , CAP , null , , 34 , 0 , , , , , Carrier mobility degradation in highly B-doped junctions , , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP101 , CAP , null , , 50 , 53 , , , , , Influence of Si surface on damage generation and recombination , , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP103 , CAP , null , , 237 , 248 , , , , , Atomistic Simulation Techniques in Front-End Processing , , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2097 , CAP , null , , 279 , 0 , , , , , F+ Implants in Crystalline Si: The Si Interstitial Contribution , , Lopez, Pedro; Pelaz, Lourdes; Duffy, Ray; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP107 , CAP , null , , 223 , 0 , , , , , First Principles Study of Boron in Amorphous Silicon , , Santos, Ivan; Windl, Wolfgang; Pelaz, Lourdes; Marques, Luis Alberto , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP14683 , CAP , null , , 71 , 76 , , , , , Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation , , Santos, Ivan; Alberto Marques, Luis; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP98 , CAP , null , , 17 , 20 , , , , , Molecular dynamics modeling of octadecaborane implantation into Si , , Marques, Luis A.; Pelaz, L.; Santos, I.; Lopez, P.; Aboy, M. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP102 , CAP , null , , 21 , 0 , , , , , Atomistic simulation of damage accumulation during shallow B and As implant into Si , , Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan; Van den Berg, J. A. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP314 , CAP , null , , 29 , 0 , , , , , Boron electrical activation in SOI compared to bulk si substrates , , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Montserrat, J.; Bermudez, F. J. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP104 , CAP , null , , 44 , 0 , , , , , Molecular dynamics simulation of octadecaborane implantation into silicon , , Marques, Luis A.; Pelaz, Lourdes; Santos, Iva; Lopez, Pedro; Aboy, Maria; Venezia, Vincent C. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP105 , CAP , null , , 37 , 0 , , , , , Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime , , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP110 , CAP , null , , 5 , 0 , , , , , Physics based models for process optimization , , Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP14703 , CAP , null , , 284 , 0 , , , , , An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon , , Edmondson, P. D.; Birtcher, R. C.; Vishnyakov, V. M.; Lopez, P.; Pelaz, L.; Marques, L. A.; Donnelly, S. E. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2096 , CAP , null , , 29 , 0 , , , , , Fluorine profile distortion upon annealing by the presence of a CVD grown boron box , , Lopez, P.; Pelaz, L.; Duffy, R.; Meunier-Beillarcf, P.; van der Tak, K.; Roozeboom, F.; Maas, G. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP312 , CAP , null , , 427 , 430 , , , , , Atomistic analysis of annealing behavior of amorphous regions , , Lopez, P; Pelaz, L; Marques, LA; Santos, I; Aboy, M; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP310 , CAP , null , , 431 , 434 , , , , , Boron redistribution in pre-amorphized Si during thermal annealing. , , Pelaz, L; Aboy, M; Duffy, R; Venezia, V; Marques, LA; Lopez, P; Santos, L; Hernandez, J; Bailon, LA; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1958 , CAP , null , , 435 , 437 , , , , , Damage buildup model with dose rate and temperature dependence , , Hernandez-Mangas, JM; Pelaz, L; Marques, LA; Bailon, L , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP311 , CAP , null , , 447 , 450 , , , , , Morphology of As-implanted damage in silicon: A molecular dynamics study , , Santos, L; Marques, LA; Pelaz, L; Aboy, M; Lopez, P; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP315 , CAP , null , , 451 , 454 , , , , , Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions , , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Santos, I; Barbolla, J; Duffy, R , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1959 , CAP , null , , 405 , 408 , , , , , Study of the amorphous phase of silicon using molecular dynamics simulation techniques , , Marques, LA; Pelaz, L; Santos, L; Bailon, L; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP100 , CAP , null , , 307 , 312 , , , , , Atomistic analysis of the role of silicon interstitials in boron cluster dissolution , , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP106 , CAP , null , , 431 , 436 , , , , , Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers. , , Pelaz, L; Marques, LA; Lopez, P; Santos, L; Aboy, M; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP308 , CAP , null , , 151 , 154 , , , , , Atomistic modeling of B activation and deactivation for ultra-shallow junction formation , , Aboy, M; Pelaz, L; Marques, LA; Barbolla, J; Mokhberi, A; Takamura, Y; Griffin, PB; Plummer, JD , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP97 , CAP , null , , 535 , 0 , , , , , Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices , , Pelaz, L.; Duffy, R.; Aboy, M.; Marques, L.; Lopez, P.; Santos, I.; Pawlak, B. J.; van Dal, M. J. H.; Duriez, B.; Merelle, T.; Doornbos, G.; Collaert, N.; Witters, L.; Rooyackers, R.; Vandervorst, W.; Jurczak, M.; Kaiser, M.; Weemaes, R. G. R.; van Berkum, J. G. M.; Breimer, P.; Lander, R. J. P. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP307 , CAP , null , , 489 , 492 , , , , , Dopant redistribution effects in preamorphized silicon during low temperature annealing , , Venezia, VC; Duffy, R; Pelaz, L; Aboy, M; Heringa, A; Griffin, PB; Wang, CC; Hopstaken, MJP; Tamminga, Y; Dao, T; Pawlak, BJ; Roozeboom, F , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1960 , CAP , null , , 31 , 40 , , , , , Modeling of dopant and defect interactions in Si process simulators , , Pelaz, L; Marques, LA; Aboy, M; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP96 , CAP , null , , 879 , 882 , , , , , A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node , , Mokhberi, A; Pelaz, L; Aboy, M; Marves, L; Barbolla, J; Paton, E; McCoy, S; Ross, J; Elliott, K; Gelpey, J; Griffin, PB; Plummer, JD , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP94 , CAP , null , , 26 , 29 , , , , , The role of incomplete interstitial-vacancy recombination on silicon amorphization , , Marques, LA; Pelaz, L; Hernandez, J; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2094 , CAP , null , , 784 , 788 , , , , , Defects and diffusion in MeV implanted silicon , , Venezia, VC; Haynes, TE; Agarwal, A; Gossmann, HJ; Pelaz, L; Jacobson, DC; Eaglesham, DJ; Duggan, JL , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2092 , CAP , null , , 75 , 86 , , , , , Dose, energy, and ion species dependence of the effective plusfactor for transient enhanced diffusion , , Hobler, G; Pelaz, L; Rafferty, CS , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1929 , CAP , null , , 43 , 53 , , , , , Atomistic modeling of point and extended defects in crystalline materials , , Jaraiz, M; Pelaz, L; Rubio, E; Barbolla, J; Gilmer, GH; Eaglesham, DJ; Gossmann, HJ; Poate, JM , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2095 , CAP , null , , 1232 , 1240 , , , , , Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation , , Agarwal, A; Eaglesham, DJ; Gossmann, HJ; Pelaz, L; Herner, SB; Jacobson, DC; Haynes, TE; Erokhin, YE , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1925 , CAP , null , , 341 , 346 , , , , , Atomistic model of transient enhanced diffusion and clustering of boron in silicon , , Pelaz, L; Gilmer, GH; Jaraiz, M; Gossmann, HJ; Rafferty, CS; Eaglesham, DJ; Poate, JM , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2093 , CAP , null , , 467 , 470 , , , , , Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions , , Agarwal, A; Eaglesham, DJ; Gossmann, HJ; Pelaz, L; Herner, SB; Jacobson, DC; Haynes, TE; Erokhin, Y; Simonton, R , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP1928 , CAP , null , , 151 , 156 , , , , , ON THE FORWARD CONDUCTION MECHANISMS IN SIC P-N JUNCTIONS , , PELAZ, L; VINCENTE, J; JARAIZ, M; BAILON, L; BARBOLLA, J , S ) ) ) ][][][][][][][][][][ Tesis ( TES2145636667 , 100 , 2010-03-15 , SC , 58015811 , Universidad de Valladolid , MULTISCALE MODELING OF DOPANT IMPLANTATION AND DIFFUSION IN CRYSTALLINE AND AMORPHOUS SILICON , S , ) , Tesis ( TES2145631568 , 100 , 2008-04-04 , SC , 58015811 , Universidad de Valladolid , ATOMISTIC MODELING OF AMORPHIZATION-RECRYSTALLIZATION AND IMPURITY COIMPLANTATION FOR THE FABRICATION OF ULTRA SHALLOW JUNCTIONS IN SILICON , S , ) , Tesis ( TES2145629592 , 100 , 2005-06-13 , SC , 58015811 , Universidad de Valladolid , MODELADO Y ANÁLISIS DE LOS MECANISMOS DE ACTIVACIÓN ELÉCTRICA DEL BORO EN PROCESOS TECNOLÓGICOS EN SILICIO , S , ) ][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7826d7dc, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3e25ea24, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2b2f015c][][ Convenio ( ActivEquipo ( CNV3350 , CNV , , 2014-07-01 , 2016-07-31 , null , 60000 , S , ) ) ][][][][][][][][ Proyecto ( ActivEquipo ( PJI60182 , PJI , TEC2017-86150-P , 2018-01-01 , 2020-12-31 , null , 54450 , S , ) ) , Proyecto ( ActivEquipo ( PJI60138 , PJI , VA119G18 , 2018-06-05 , 2020-09-30 , null , 12000 , S , ) ) , Proyecto ( ActivEquipo ( PJI59863 , PJI , VA097P17 , 2017-07-26 , 2019-10-31 , null , 100950 , S , ) ) , Proyecto ( ActivEquipo ( PJI53196 , PJI , TEC2014-60694-P , 2015-01-01 , 2017-12-31 , 2018-12-31 , 62920 , S , ) ) , Proyecto ( ActivEquipo ( PJI53211 , PJI , VA331U14 , 2014-01-01 , 2017-12-31 , null , 15755 , S , ) ) , Proyecto ( ActivEquipo ( PJI54022 , PJI , TEC2011-27701 , 2012-01-01 , 2015-12-31 , 2015-12-31 , 87967 , S , ) ) , Proyecto ( ActivEquipo ( PJI49570 , PJI , VA011A09 , 2009-05-05 , 2010-12-31 , null , 16400 , S , ) ) , Proyecto ( ActivEquipo ( PJI52370 , PJI , TEC2008-06069/TEC , 2009-01-01 , 2011-12-31 , null , 86031 , S , ) ) , Proyecto ( ActivEquipo ( PJI49126 , PJI , TEC2005-05101 , 2005-10-15 , 2008-12-31 , null , 152558 , S , ) ) , Proyecto ( ActivEquipo ( PJI48864 , PJI , VA070A05 , 2005-06-16 , 2007-12-31 , null , 27300 , S , ) ) , Proyecto ( ActivEquipo ( PJI47517 , PJI , VA010/02 , 2002-02-19 , 2004-11-20 , null , 19273 , S , ) ) , Proyecto ( ActivEquipo ( PJI47796 , PJI , BFM2001-2250 , 2001-12-28 , 2005-06-27 , null , 213058.77 , S , ) ) , Proyecto ( ActivEquipo ( PJI47496 , PJI , PB98-0348 , 1999-12-30 , 2001-12-30 , null , 134626.7 , S , ) ) , Proyecto ( ActivEquipo ( PJI53705 , PJI , VA37/96 , 1997-01-04 , 1999-01-03 , null , 14882.86 , S , ) ) , Proyecto ( ActivEquipo ( PJI53844 , PJI , VA27/97 , 1997-04-02 , 1999-04-01 , null , 8330.63 , S , ) ) , Proyecto ( ActivEquipo ( PJI53598 , PJI , PB95-0710 , 1996-11-01 , 1999-11-01 , null , 152056.06 , S , ) ) ][][][][]

AYUDA A LA INVESTIGACIÓN

PUBLICACIONES

Artículos de revista (112)

Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan. Improved physical models for advanced silicon device processing. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2017; 62: 62-79.
Enlace a la publicación
Santos, Ivan; Lopez, Pedro; Aboy, Maria; Marques, Luis A.; Pelaz, Lourdes. Characterization of amorphous Si generated through classical molecular dynamics simulations. PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) 2017.
Lopez, Pedro; Ruiz, D. C.; Santos, I.; Aboy, M.; Marques, L. A.; Trochet, M.; Mousseau, N.; Pelaz, L. Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique. PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) 2017.
Santos, Ivan; Aboy, Maria; Lopez, Pedro; Marques, Luis A.; Pelaz, Lourdes. Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations. JOURNAL OF PHYSICS D-APPLIED PHYSICS 2016; 49.
Enlace a la publicación
Marques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes. Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2016; 42: 235-238.
Enlace a la publicación
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Capítulos de libros (39)

Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria. Modeling of defect generation and dissolution in ion implanted semiconductors. En: Ion Implantation Technology 2010. 2011. p. 176-180.

Pelaz, Lourdes; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Santos, Ivan. Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization. En: Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009). 2009. p. 411-418.

Pelaz, L.; Marques, L.; Aboy, M.; Lopez, P.; Santos, I.; Duffy, R. Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices. En: Electron Devices Meeting (IEDM), 2009 IEEE International. 2009.

Lopez, Pedro; Pelaz, Lourdes; Marques, Luis Alberto; Aboy, Maria; Santos, Ivan. Atomistic simulations of the effect of implant parameters on Si damage. En: 2009. p. 12-15.

Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S. Carrier mobility degradation in highly B-doped junctions. En: 2009.

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AYUDA A LA INVESTIGACIÓN

Proyectos (16)

MODELADO ATOMÍSTICO DE MECANISMOS DE CRECIMIENTO EPITAXIAL DE SIGE. PELAZ MONTES, MARIA LOURDES (IP). TEC2017-86150-P. MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD FONDOS FEDER 2018-2020
ESTUDIO DE PROCESOS TECNOLÓGICOS AVANZADOS PARA LA FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS NANOMÉTRICOS MEDIANTE TÉCNICAS DE SIMULACIÓN PREDICTIVA. MARQUES CUESTA, LUIS ALBERTO (IP). VA119G18. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2018-2020
MODELADO ATOMÍSTICO DE LOS MECANISMOS DE LIBERACIÓN DE TENSIÓN PARA EL CRECIMIENTO DE NANOESTRUCTURAS EN SIGE. PELAZ MONTES, MARIA LOURDES (IP). VA097P17. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2017-2019
INGENIERÍA DE DEFECTOS PARA EXPLORAR NUEVAS APLICACIONES EN SEMICONDUCTORES APOYADA EN LA SIMULACIÓN MULTIESCALA. PELAZ MONTES, MARIA LOURDES (IP). TEC2014-60694-P. MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD 2015-2018
EXPLORACIÓN MEDIANTE MODELADO DE ESTRATEGIAS DE INGENIERÍA DE DEFECTOS EN ESTRUCTURAS SEMICONDUCTORAS. PELAZ MONTES, MARIA LOURDES (IP). VA331U14. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2014-2017
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Convenios (1)

Asesoramiento para el desarrollo de dispositivos tecnológicos para congresos, eventos y museos.. PELAZ MONTES, MARIA LOURDES . EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL 2014
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OTROS

Tesis doctorales (3)

SANTOS TEJIDO, IVAN MULTISCALE MODELING OF DOPANT IMPLANTATION AND DIFFUSION IN CRYSTALLINE AND AMORPHOUS SILICON. UNIVERSIDAD DE VALLADOLID; 2010.
 
LOPEZ MARTIN, PEDRO ATOMISTIC MODELING OF AMORPHIZATION-RECRYSTALLIZATION AND IMPURITY COIMPLANTATION FOR THE FABRICATION OF ULTRA SHALLOW JUNCTIONS IN SILICON. UNIVERSIDAD DE VALLADOLID; 2008.
 
ABOY CEBRIAN, MARIA MODELADO Y ANÁLISIS DE LOS MECANISMOS DE ACTIVACIÓN ELÉCTRICA DEL BORO EN PROCESOS TECNOLÓGICOS EN SILICIO. UNIVERSIDAD DE VALLADOLID; 2005.
 
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Congresos (3)

AYUDAS UVA A LA INVESTIGACION: ORAL INVITADA: SIMULATION OF P-N JUNCTYIONS, PRESENT STATE AND FUTURE CHALLENGES FOR TECHNOLOGIES BEYOND 32 NM, ( ESTADOS UNIDOS DE AMÉRICA ) 26/04/2009
(Asistencia). PELAZ MONTES, MARIA LOURDES. AYUDAS UVA A LA INVESTIGACION: ORAL INVITADA: SIMULATION OF P-N JUNCTYIONS, PRESENT STATE AND FUTURE CHALLENGES FOR TECHNOLOGIES BEYOND 32 NM
AYUDAS UVA A LA INVESTIGACION: COMUNICACION ORAL: ATOMISTEC MODELING OF IMPURITY CON IMPLANTATION CONNOULTRA, ( ESTADOS UNIDOS DE AMÉRICA ) 15/12/2008
(Asistencia). PELAZ MONTES, MARIA LOURDES. AYUDAS UVA A LA INVESTIGACION: COMUNICACION ORAL: ATOMISTEC MODELING OF IMPURITY CON IMPLANTATION CONNOULTRA
AYUDAS UVA A LA INVESTIGACION: COMUNCACION ORAL- MULTISCALE MODELING OF RADIATION DAMAGE AND ANNEALING INSI, ( ESTADOS UNIDOS DE AMÉRICA ) 18/06/2006
(Asistencia). PELAZ MONTES, MARIA LOURDES. AYUDAS UVA A LA INVESTIGACION: COMUNCACION ORAL- MULTISCALE MODELING OF RADIATION DAMAGE AND ANNEALING INSI
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