Inicio > LOPEZ MARTIN, PEDRO

LOPEZ MARTIN, PEDRO

PROFESORES TITULARES DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
pedrol@ele.uva.es

Índice H en Web of Science: 12
Índice H en Scopus: 12
 
Enlazar esta página

[][ PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6420 , ARE , 2017-11-17 , REC , 0 , 0 , 119 , 0 , CIE , PUB , Ultrafast Generation of Unconventional {001 } Loops in Si , PHYSICAL REVIEW LETTERS , Marques, Luis A.; Aboy, Maria; Santos, Ivan; Lopez, Pedro; Cristiano, Fuccio; La Magna, Antonino; Huet, Karim; Tabata, Toshiyuki; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE600 , ARE , 2017-05-01 , REC , 62 , 79 , 62 , 0 , CIE , PUB , Improved physical models for advanced silicon device processing , MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE620 , ARE , 2017-01-01 , REC , 0 , 0 , 0 , 0 , CIE , PUB , Characterization of amorphous Si generated through classical molecular dynamics simulations , 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) , Santos, Ivan; Lopez, Pedro; Aboy, Maria; Marques, Luis A.; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE630 , ARE , 2017-01-01 , REC , 0 , 0 , 0 , 0 , CIE , PUB , Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique , 2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) , Lopez, Pedro; Ruiz, D. C.; Santos, I.; Aboy, M.; Marques, L. A.; Trochet, M.; Mousseau, N.; Pelaz, L. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE596 , ARE , 2016-02-25 , REC , 0 , 0 , 49 , 0 , CIE , PUB , Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations , JOURNAL OF PHYSICS D-APPLIED PHYSICS , Santos, Ivan; Aboy, Maria; Lopez, Pedro; Marques, Luis A.; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE599 , ARE , 2016-02-01 , REC , 235 , 238 , 42 , 0 , CIE , PUB , Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon , MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , Marques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE631 , ARE , 2016-01-01 , REC , 35 , 37 , 0 , 0 , CIE , PUB , Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion , 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) , Santos, I.; Aboy, M.; Marques, L. A.; Lopez, P.; Ruiz, M.; Pelaz, L.; Hernandez-Diaz, A. M.; Castrillo, P. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE628 , ARE , 2015-06-01 , REC , 148 , 151 , 352 , 0 , CIE , PUB , Atomistic modeling of ion implantation technologies in silicon , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Marques, Luis A.; Santos, Ivan; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6589 , ARE , 2015-01-01 , REC , 0 , 0 , 352 , 0 , CIE , PUB , A detailed approach for the classification and statistical analysis of irradiation induced defects , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Lopez, Pedro; Santos, Ivan; Aboy, Maria; Marques, Luis A.; Pelaz, Lourdes , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE612 , ARE , 2014-03-01 , REC , 40 , 58 , 13 , 0 , CIE , PUB , Modeling of defects, dopant diffusion and clustering in silicon , JOURNAL OF COMPUTATIONAL ELECTRONICS , Aboy, Maria; Santos, I.; Pelaz, L.; Marques, L. A.; Lopez, P. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2694 , ARE , 2014-02-01 , REC , 0 , 0 , 7 , 0 , CIE , PUB , Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing , APPLIED PHYSICS EXPRESS , Fisicaro, Giuseppe; Pelaz, Lourdes; Aboy, Maria; Lopez, Pedro; Italia, Markus; Huet, Karim; Cristiano, Filadelfo; Essa, Zahi; Yang, Qui; Bedel-Pereira, Elena; Quillec, Maurice; La Magna, Antonino , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9099 , ARE , 2012-09-27 , REC , 0 , 0 , 86 , 0 , CIE , PUB , Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon , PHYSICAL REVIEW E , Fisicaro, G.; Pelaz, L.; Lopez, P.; La Magna, A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE593 , ARE , 2012-02-01 , REC , 0 , 0 , 111 , 0 , CIE , PUB , Molecular dynamics simulation of the regrowth of nanometric multigate Si devices , JOURNAL OF APPLIED PHYSICS , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Duffy, Ray , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE623 , ARE , 2012-02-01 , REC , 0 , 0 , 111 , 0 , CIE , PUB , Molecular dynamics simulations of damage production by thermal spikes in Ge , JOURNAL OF APPLIED PHYSICS , Lopez, Pedro; Pelaz, Lourdes; Santos, Ivan; Marques, Luis A.; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9090 , ARE , 2012-01-01 , REC , 221 , 224 , 1496 , 0 , CIE , PUB , Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes , ION IMPLANTATION TECHNOLOGY 2012 , Fisicaro, G.; Pelaz, L.; Lopez, P.; Italia, M.; Huet, K.; Venturini, J.; La Magna, A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE592 , ARE , 2012-01-01 , REC , 229 , 232 , 1496 , 0 , CIE , PUB , Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study , ION IMPLANTATION TECHNOLOGY 2012 , Santos, I.; Marques, L. A.; Pelaz, L.; Lopez, P.; Aboy, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2696 , ARE , 2010-07-01 , REC , 266 , 284 , 23 , 0 , CIE , PUB , Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions , INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE603 , ARE , 2010-01-01 , REC , 176 , 180 , 1321 , 0 , CIE , PUB , Modeling of defect generation and dissolution in ion implanted semiconductors , ION IMPLANTATION TECHNOLOGY 2010 , Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE601 , ARE , 2010-01-01 , REC , 0 , 0 , 28 , 0 , CIE , PUB , Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Santos, Ivan; Lopez, Pedro; Duffy, Ray , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE598 , ARE , 2009-12-01 , REC , 323 , 359 , 72 , 0 , CIE , PUB , Front-end process modeling in silicon , EUROPEAN PHYSICAL JOURNAL B , Pelaz, L.; Marques, L. A.; Aboy, M.; Lopez, P.; Santos, I. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE604 , ARE , 2009-04-15 , REC , 0 , 0 , 105 , 0 , CIE , PUB , Improved atomistic damage generation model for binary collision simulations , JOURNAL OF APPLIED PHYSICS , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE621 , ARE , 2009-01-01 , REC , 411 , 418 , 25 , 0 , CIE , PUB , Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization , ANALYTICAL TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND PROCESS CHARACTERIZATION 6 (ALTECH 2009) , Pelaz, Lourdes; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2697 , ARE , 2009-01-01 , REC , 479 , 0 , 0 , 0 , CIE , PUB , Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices , 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING , Pelaz, L.; Marques, L.; Aboy, M.; Lopez, P.; Santos, I.; Duffy, R. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2699 , ARE , 2008-12-05 , REC , 207 , 210 , 154 , 0 , CIE , PUB , Atomistic modeling of FnVm complexes in pre-amorphized Si , MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , Lopez, Pedro; Pelaz, Lourdes; Aboy, Maria; Impellizeri, G.; Mirabella, S.; Priolo, F.; Napolitani, E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE2698 , ARE , 2008-12-05 , REC , 247 , 251 , 154 , 0 , CIE , PUB , Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects , MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S.; Napolitani, E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9106 , ARE , 2008-05-01 , REC , 0 , 0 , 103 , 0 , CIE , PUB , Si interstitial contribution of F(+) implants in crystalline Si , JOURNAL OF APPLIED PHYSICS , Lopez, Pedro; Pelaz, Lourdes; Duffy, R.; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE609 , ARE , 2008-01-01 , REC , 237 , 248 , 1070 , 0 , CIE , PUB , Atomistic Simulation Techniques in Front-End Processing , DOPING ENGINEERING FOR FRONT-END PROCESSING , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9107 , ARE , 2008-01-01 , REC , 377 , 381 , 26 , 0 , CIE , PUB , Evolution of fluorine and boron profiles during annealing in crystalline Si , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Lopez, Pedro; Pelaz, Lourdes; Duffy, Ray; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9109 , ARE , 2008-01-01 , REC , 279 , 0 , 1070 , 0 , CIE , PUB , F+ Implants in Crystalline Si: The Si Interstitial Contribution , DOPING ENGINEERING FOR FRONT-END PROCESSING , Lopez, Pedro; Pelaz, Lourdes; Duffy, Ray; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE11428 , ARE , 2008-01-01 , COP , 71 , 76 , 139 , 0 , CIE , PUB , Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation , THEORY, MODELING AND NUMERICAL SIMULATION OF MULTI-PHYSICS MATERIALS BEHAVIOR , Santos, Ivan; Alberto Marques, Luis; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE595 , ARE , 2008-01-01 , REC , 71 , 76 , 139 , 0 , CIE , PUB , Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation , THEORY, MODELING AND NUMERICAL SIMULATION OF MULTI-PHYSICS MATERIALS BEHAVIOR , Santos, Ivan; Alberto Marques, Luis; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE606 , ARE , 2008-01-01 , REC , 0 , 0 , 78 , 0 , CIE , PUB , Structural transformations from point to extended defects in silicon: A molecular dynamics study , PHYSICAL REVIEW B , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE625 , ARE , 2007-10-01 , REC , 0 , 0 , 76 , 0 , CIE , PUB , Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects , PHYSICAL REVIEW B , Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE616 , ARE , 2007-05-01 , REC , 0 , 0 , 101 , 0 , CIE , PUB , Atomistic analysis of the annealing behavior of amorphous regions in silicon , JOURNAL OF APPLIED PHYSICS , Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE610 , ARE , 2007-02-01 , REC , 110 , 113 , 255 , 0 , CIE , PUB , Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE602 , ARE , 2007-02-01 , REC , 95 , 100 , 255 , 0 , CIE , PUB , Multiscale modeling of radiation damage and annealing in Si , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE611 , ARE , 2006-09-01 , REC , 2432 , 2436 , 24 , 0 , CIE , PUB , Atomistic modeling of dopant implantation, diffusion, and activation , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , Pelaz, L.; Aboy, M.; Lopez, P.; Marques, L. A. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE626 , ARE , 2006-05-08 , REC , 0 , 0 , 88 , 0 , CIE , PUB , Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth , APPLIED PHYSICS LETTERS , Aboy, M; Pelaz, L; Lopez, P; Marques, LA; Duffy, R; Venezia, VC , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE613 , ARE , 2006-01-01 , REC , 284 , 0 , 26 , 0 , CIE , PUB , An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon , EMAG-NANO 2005: IMAGING, ANALYSIS AND FABRICATION ON THE NANOSCALE , Edmondson, P. D.; Birtcher, R. C.; Vishnyakov, V. M.; Lopez, P.; Pelaz, L.; Marques, L. A.; Donnelly, S. E. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE9105 , ARE , 2006-01-01 , REC , 29 , 0 , 866 , 0 , CIE , PUB , Fluorine profile distortion upon annealing by the presence of a CVD grown boron box , ION IMPLANTATION TECHNOLOGY , Lopez, P.; Pelaz, L.; Duffy, R.; Meunier-Beillarcf, P.; van der Tak, K.; Roozeboom, F.; Maas, G. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE6590 , ARE , 2006-01-01 , REC , 0 , 0 , 253 , 1-2 , CIE , PUB , Physical insight into ultra-shallow junction formation through atomistic modeling , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, L.; Aboy, M.; Lopez, P.; Marques, L. A.; Santos, I. , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE582 , ARE , 2005-12-05 , REC , 379 , 382 , 124 , 0 , CIE , PUB , Amorphous layer depth dependence on implant parameters during Si self-implantation , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Lopez, P; Pelaz, L; Marques, LA; Barbolla, J; Gossmann, HJL; Agarwal, A; Kimura, K; Matsushita, T , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE622 , ARE , 2005-12-05 , REC , 72 , 80 , 124 , 0 , CIE , PUB , Atomistic simulations in Si processing: Bridging the gap between atoms and experiments , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Marques, LA; Pelaz, L; Lopez, P; Aboy, M; Santos, I; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE627 , ARE , 2005-12-05 , REC , 372 , 375 , 124 , 0 , CIE , PUB , Molecular dynamics characterization of as-implanted damage in silicon , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Santos, I; Marques, LA; Pelaz, L; Lopez, P; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE607 , ARE , 2005-12-01 , REC , 501 , 505 , 241 , 0 , CIE , PUB , Atomistic modeling of ion beam induced amorphization in silicon , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, L; Marques, LA; Lopez, P; Santos, L; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE597 , ARE , 2005-05-15 , REC , 0 , 0 , 97 , 0 , CIE , PUB , Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon , JOURNAL OF APPLIED PHYSICS , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J; Duffy, R , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE608 , ARE , 2005-01-17 , REC , 0 , 0 , 86 , 0 , CIE , PUB , Role of silicon interstitials in boron cluster dissolution , APPLIED PHYSICS LETTERS , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J; Duffy, R; Venezia, VC; Griffin, PB , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE619 , ARE , 2005-01-01 , REC , 112 , 117 , 33 , 0 , CIE , PUB , A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework , COMPUTATIONAL MATERIALS SCIENCE , Marques, LA; Pelaz, L; Aboy, M; Lopez, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE617 , ARE , 2005-01-01 , REC , 92 , 105 , 33 , 0 , CIE , PUB , Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation , COMPUTATIONAL MATERIALS SCIENCE , Pelaz, L; Marques, LA; Aboy, M; Lopez, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE594 , ARE , 2004-12-15 , REC , 82 , 87 , 114 , 0 , CIE , PUB , Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Lopez, P; Pelaz, L; Marques, LA; Santos, I; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE618 , ARE , 2004-12-15 , REC , 193 , 197 , 114 , 0 , CIE , PUB , The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles , MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J; Venezia, VC; Duffy, R; Griffin, PB , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE590 , ARE , 2004-02-01 , REC , 41 , 45 , 216 , 0 , CIE , PUB , Atomistic modeling of ion beam induced amorphization in silicon , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Pelaz, L; Marques, LA; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE605 , ARE , 2004-01-01 , REC , 307 , 312 , 810 , 0 , CIE , PUB , Atomistic analysis of the role of silicon interstitials in boron cluster dissolution , SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE614 , ARE , 2004-01-01 , REC , 431 , 436 , 810 , 0 , CIE , PUB , Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers. , SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY , Pelaz, L; Marques, LA; Lopez, P; Santos, L; Aboy, M; Barbolla, J , S ) ) ) , PublicacionArticuloRevista ( PublicacionArticuloRevistaComun ( Publicacion ( ARE591 , ARE , 1996-05-01 , REC , 156 , 159 , 112 , 0 , CIE , PUB , Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions , NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , Rubio, JE; Marques, LA; Pelaz, L; Jaraiz, M; Barbolla, J , S ) ) ) ][ PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP99 , CAP , null , , 176 , 180 , , , , , Modeling of defect generation and dissolution in ion implanted semiconductors , , Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP109 , CAP , null , , 411 , 418 , , , , , Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization , , Pelaz, Lourdes; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP313 , CAP , null , , 479 , 0 , , , , , Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices , , Pelaz, L.; Marques, L.; Aboy, M.; Lopez, P.; Santos, I.; Duffy, R. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP108 , CAP , null , , 12 , 15 , , , , , Atomistic simulations of the effect of implant parameters on Si damage , , Lopez, Pedro; Pelaz, Lourdes; Marques, Luis Alberto; Aboy, Maria; Santos, Ivan , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP309 , CAP , null , , 34 , 0 , , , , , Carrier mobility degradation in highly B-doped junctions , , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP101 , CAP , null , , 50 , 53 , , , , , Influence of Si surface on damage generation and recombination , , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP103 , CAP , null , , 237 , 248 , , , , , Atomistic Simulation Techniques in Front-End Processing , , Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2097 , CAP , null , , 279 , 0 , , , , , F+ Implants in Crystalline Si: The Si Interstitial Contribution , , Lopez, Pedro; Pelaz, Lourdes; Duffy, Ray; Meunier-Beillard, P.; Roozeboom, F.; van der Tak, K.; Breimer, P.; van Berkum, J. G. M.; Verheijen, M. A.; Kaiser, M. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP14683 , CAP , null , , 71 , 76 , , , , , Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation , , Santos, Ivan; Alberto Marques, Luis; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP98 , CAP , null , , 17 , 20 , , , , , Molecular dynamics modeling of octadecaborane implantation into Si , , Marques, Luis A.; Pelaz, L.; Santos, I.; Lopez, P.; Aboy, M. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP102 , CAP , null , , 21 , 0 , , , , , Atomistic simulation of damage accumulation during shallow B and As implant into Si , , Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan; Van den Berg, J. A. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP314 , CAP , null , , 29 , 0 , , , , , Boron electrical activation in SOI compared to bulk si substrates , , Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Montserrat, J.; Bermudez, F. J. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP104 , CAP , null , , 44 , 0 , , , , , Molecular dynamics simulation of octadecaborane implantation into silicon , , Marques, Luis A.; Pelaz, Lourdes; Santos, Iva; Lopez, Pedro; Aboy, Maria; Venezia, Vincent C. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP105 , CAP , null , , 37 , 0 , , , , , Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime , , Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP110 , CAP , null , , 5 , 0 , , , , , Physics based models for process optimization , , Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP14703 , CAP , null , , 284 , 0 , , , , , An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon , , Edmondson, P. D.; Birtcher, R. C.; Vishnyakov, V. M.; Lopez, P.; Pelaz, L.; Marques, L. A.; Donnelly, S. E. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP2096 , CAP , null , , 29 , 0 , , , , , Fluorine profile distortion upon annealing by the presence of a CVD grown boron box , , Lopez, P.; Pelaz, L.; Duffy, R.; Meunier-Beillarcf, P.; van der Tak, K.; Roozeboom, F.; Maas, G. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP312 , CAP , null , , 427 , 430 , , , , , Atomistic analysis of annealing behavior of amorphous regions , , Lopez, P; Pelaz, L; Marques, LA; Santos, I; Aboy, M; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP310 , CAP , null , , 431 , 434 , , , , , Boron redistribution in pre-amorphized Si during thermal annealing. , , Pelaz, L; Aboy, M; Duffy, R; Venezia, V; Marques, LA; Lopez, P; Santos, L; Hernandez, J; Bailon, LA; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP311 , CAP , null , , 447 , 450 , , , , , Morphology of As-implanted damage in silicon: A molecular dynamics study , , Santos, L; Marques, LA; Pelaz, L; Aboy, M; Lopez, P; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP315 , CAP , null , , 451 , 454 , , , , , Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions , , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Santos, I; Barbolla, J; Duffy, R , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP100 , CAP , null , , 307 , 312 , , , , , Atomistic analysis of the role of silicon interstitials in boron cluster dissolution , , Aboy, M; Pelaz, L; Marques, LA; Lopez, P; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP106 , CAP , null , , 431 , 436 , , , , , Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers. , , Pelaz, L; Marques, LA; Lopez, P; Santos, L; Aboy, M; Barbolla, J , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP308 , CAP , null , , 151 , 154 , , , , , Atomistic modeling of B activation and deactivation for ultra-shallow junction formation , , Aboy, M; Pelaz, L; Marques, LA; Barbolla, J; Mokhberi, A; Takamura, Y; Griffin, PB; Plummer, JD , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP97 , CAP , null , , 535 , 0 , , , , , Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices , , Pelaz, L.; Duffy, R.; Aboy, M.; Marques, L.; Lopez, P.; Santos, I.; Pawlak, B. J.; van Dal, M. J. H.; Duriez, B.; Merelle, T.; Doornbos, G.; Collaert, N.; Witters, L.; Rooyackers, R.; Vandervorst, W.; Jurczak, M.; Kaiser, M.; Weemaes, R. G. R.; van Berkum, J. G. M.; Breimer, P.; Lander, R. J. P. , S ) ) ) , PublicacionCapituloLibro ( PublicacionCapituloLibroComun ( Publicacion ( CAP94 , CAP , null , , 26 , 29 , , , , , The role of incomplete interstitial-vacancy recombination on silicon amorphization , , Marques, LA; Pelaz, L; Hernandez, J; Barbolla, J , S ) ) ) ][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@182edcc5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2ca015ea][][ Convenio ( ActivEquipo ( CNV3350 , CNV , , 2014-07-01 , 2016-07-31 , null , 60000 , S , ) ) ][][][ EstanciaInvestigacion ( Actividad: ( ESF58771 , ESF , 2006-09-21 , 2006-11-19 , null , , , , AYUDAS UVA A LA INVESTIGACION: ESTANCIA DE INVESTIGACION , , S , ) ) ][ EstanciaInvestigacion ( Actividad: ( ESF58771 , ESF , 2006-09-21 , 2006-11-19 , null , , , , AYUDAS UVA A LA INVESTIGACION: ESTANCIA DE INVESTIGACION , , S , ) ) ][][][][ Proyecto ( ActivEquipo ( PJI60182 , PJI , TEC2017-86150-P , 2018-01-01 , 2020-12-31 , null , 54450 , S , ) ) , Proyecto ( ActivEquipo ( PJI60138 , PJI , VA119G18 , 2018-06-05 , 2020-09-30 , null , 12000 , S , ) ) , Proyecto ( ActivEquipo ( PJI59863 , PJI , VA097P17 , 2017-07-26 , 2019-10-31 , null , 100950 , S , ) ) , Proyecto ( ActivEquipo ( PJI53196 , PJI , TEC2014-60694-P , 2015-01-01 , 2017-12-31 , 2018-12-31 , 62920 , S , ) ) , Proyecto ( ActivEquipo ( PJI53211 , PJI , VA331U14 , 2014-01-01 , 2017-12-31 , null , 15755 , S , ) ) , Proyecto ( ActivEquipo ( PJI54022 , PJI , TEC2011-27701 , 2012-01-01 , 2015-12-31 , 2015-12-31 , 87967 , S , ) ) , Proyecto ( ActivEquipo ( PJI49570 , PJI , VA011A09 , 2009-05-05 , 2010-12-31 , null , 16400 , S , ) ) , Proyecto ( ActivEquipo ( PJI52370 , PJI , TEC2008-06069/TEC , 2009-01-01 , 2011-12-31 , null , 86031 , S , ) ) , Proyecto ( ActivEquipo ( PJI49126 , PJI , TEC2005-05101 , 2005-10-15 , 2008-12-31 , null , 152558 , S , ) ) , Proyecto ( ActivEquipo ( PJI48864 , PJI , VA070A05 , 2005-06-16 , 2007-12-31 , null , 27300 , S , ) ) ][][][][]

AYUDA A LA INVESTIGACIÓN

PUBLICACIONES

Artículos de revista (55)

Marques, Luis A.; Aboy, Maria; Santos, Ivan; Lopez, Pedro; Cristiano, Fuccio; La Magna, Antonino; Huet, Karim; Tabata, Toshiyuki; Pelaz, Lourdes. Ultrafast Generation of Unconventional 001 Loops in Si. Physical Review Letters 2017; 119.
Enlace a la publicación
Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan. Improved physical models for advanced silicon device processing. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2017; 62: 62-79.
Enlace a la publicación
Santos, Ivan; Lopez, Pedro; Aboy, Maria; Marques, Luis A.; Pelaz, Lourdes. Characterization of amorphous Si generated through classical molecular dynamics simulations. PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) 2017.
Lopez, Pedro; Ruiz, D. C.; Santos, I.; Aboy, M.; Marques, L. A.; Trochet, M.; Mousseau, N.; Pelaz, L. Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique. PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) 2017.
Santos, Ivan; Aboy, Maria; Lopez, Pedro; Marques, Luis A.; Pelaz, Lourdes. Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations. JOURNAL OF PHYSICS D-APPLIED PHYSICS 2016; 49.
Enlace a la publicación
Ver Todos

Capítulos de libros (26)

Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria. Modeling of defect generation and dissolution in ion implanted semiconductors. En: Ion Implantation Technology 2010. 2011. p. 176-180.

Pelaz, Lourdes; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Santos, Ivan. Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization. En: Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009). 2009. p. 411-418.

Pelaz, L.; Marques, L.; Aboy, M.; Lopez, P.; Santos, I.; Duffy, R. Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices. En: Electron Devices Meeting (IEDM), 2009 IEEE International. 2009.

Lopez, Pedro; Pelaz, Lourdes; Marques, Luis Alberto; Aboy, Maria; Santos, Ivan. Atomistic simulations of the effect of implant parameters on Si damage. En: 2009. p. 12-15.

Aboy, Maria; Pelaz, Lourdes; Lopez, Pedro; Bruno, E.; Mirabella, S. Carrier mobility degradation in highly B-doped junctions. En: 2009.

Ver Todos
 

AYUDA A LA INVESTIGACIÓN

Proyectos (10)

MODELADO ATOMÍSTICO DE MECANISMOS DE CRECIMIENTO EPITAXIAL DE SIGE. PELAZ MONTES, MARIA LOURDES (IP). TEC2017-86150-P. MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD FONDOS FEDER 2018-2020
ESTUDIO DE PROCESOS TECNOLÓGICOS AVANZADOS PARA LA FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS NANOMÉTRICOS MEDIANTE TÉCNICAS DE SIMULACIÓN PREDICTIVA. MARQUES CUESTA, LUIS ALBERTO (IP). VA119G18. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2018-2020
MODELADO ATOMÍSTICO DE LOS MECANISMOS DE LIBERACIÓN DE TENSIÓN PARA EL CRECIMIENTO DE NANOESTRUCTURAS EN SIGE. PELAZ MONTES, MARIA LOURDES (IP). VA097P17. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2017-2019
INGENIERÍA DE DEFECTOS PARA EXPLORAR NUEVAS APLICACIONES EN SEMICONDUCTORES APOYADA EN LA SIMULACIÓN MULTIESCALA. PELAZ MONTES, MARIA LOURDES (IP). TEC2014-60694-P. MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD 2015-2018
EXPLORACIÓN MEDIANTE MODELADO DE ESTRATEGIAS DE INGENIERÍA DE DEFECTOS EN ESTRUCTURAS SEMICONDUCTORAS. PELAZ MONTES, MARIA LOURDES (IP). VA331U14. JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2014-2017
Ver Todos

Convenios (1)

Asesoramiento para el desarrollo de dispositivos tecnológicos para congresos, eventos y museos.. PELAZ MONTES, MARIA LOURDES . EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL 2014
Ver Todos
 

OTROS

Congresos (2)

AYUDAS UVA A LA INVESTIGACION: comunciacion: fluorine vehavior in crystalline si and its effects on b diffusion, ( ESTADOS UNIDOS DE AMÉRICA ) 06/05/2009
(Asistencia). LOPEZ MARTIN, PEDRO. AYUDAS UVA A LA INVESTIGACION: comunciacion: fluorine vehavior in crystalline si and its effects on b diffusion
AYUDAS UVA A LA INVESTIGACION: COMUNC. ORAL- FLOURINE PROFILE DISTORTION UPON ANNEALING BY THE PRESENCE OF A CVD GROWN BORON BOX, ( FRANCIA ) 08/06/2006
(Asistencia). LOPEZ MARTIN, PEDRO. AYUDAS UVA A LA INVESTIGACION: COMUNC. ORAL- FLOURINE PROFILE DISTORTION UPON ANNEALING BY THE PRESENCE OF A CVD GROWN BORON BOX
Ver Todos

Estancias de investigación (1)

AYUDAS UVA A LA INVESTIGACION: ESTANCIA DE INVESTIGACION. 21/09/2006 - 19/11/2006
     PHILIPS RESEARCH LEUVEN. LEUVEN ( BÉLGICA )
Ver Todos
Cargando información ...
Universidad de Valladolid - Copyright Universidad de Valladolid - Todos los derechos reservados