Inicio > ABOY CEBRIAN, MARIA

ABOY CEBRIAN, MARIA

PROFESORES TITULARES DE UNIVERSIDAD
Electricidad y Electrónica
Electronica
 
maria.aboy@uva.es

Índice H en Scopus: 17
Experto
  • Simulación atomística de procesos tecnológicos en electrónica
 

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75099]], camposKey:1359-6454 2022-12-01 Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75148]], camposKey:1369-8001 2022-12-01 Rapid thermal process driven intra-die device variations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65531]], camposKey:0168-583X 2022-01-01 Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons4248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65530]], camposKey:0168-583X 2022-01-01 Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism5459, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56852]], camposKey:0022-3093 2019-01-01 Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study2027, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56850]], camposKey:0168-583X 2019-01-01 On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon179183, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56851]], camposKey:1359-6454 2019-01-01 {001} loops in silicon unraveled192201, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56854]], camposKey:0361-5235 2018-01-01 Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation49554958, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=76841]], camposKey:2163-4971 2018-01-01 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56853]], camposKey:0361-5235 2018-01-01 W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations50455049, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=620]], camposKey:2163-4971 2017-01-01 Characterization of amorphous Si generated through classical molecular dynamics simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=630]], camposKey:2163-4971 2017-01-01 Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=600]], camposKey:1369-8001 2017-01-01 Improved physical models for advanced silicon device processing6279, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6420]], camposKey:0031-9007 2017-01-01 Ultrafast Generation of Unconventional {001 } Loops in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=631]], camposKey:1946-1569 2016-01-01 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion3537, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=596]], camposKey:0022-3727 2016-01-01 Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=599]], camposKey:1369-8001 2016-01-01 Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon235238, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6589]], camposKey:0168-583X 2015-01-01 A detailed approach for the classification and statistical analysis of irradiation induced defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=628]], camposKey:0168-583X 2015-01-01 Atomistic modeling of ion implantation technologies in silicon148151, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2694]], camposKey:1882-0778 2014-01-01 Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=567]], camposKey:0021-8979 2014-01-01 Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=612]], camposKey:1569-8025 2014-01-01 Modeling of defects, dopant diffusion and clustering in silicon4058, 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and future challenges for technologies beyond 32 nm00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=598]], camposKey:1434-6028 2009-12-01 Front-end process modeling in silicon323359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=621]], camposKey:1938-5862 2009-01-01 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization411418, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11426]], camposKey:0163-1918 2009-01-01 Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices10, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2699]], camposKey:0921-5107 2008-12-05 Atomistic modeling of FnVm complexes in pre-amorphized Si207210, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2698]], camposKey:0921-5107 2008-12-05 Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects247251, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11427]], camposKey:0163-1918 2008-12-01 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=609]], camposKey:0272-9172 2008-01-01 Atomistic Simulation Techniques in Front-End Processing237248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=595]], camposKey:1012-0394 2008-01-01 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation7176, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=606]], camposKey:2469-9950 2008-01-01 Structural transformations from point to extended defects in silicon: A molecular dynamics study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=625]], camposKey:2469-9950 2007-10-01 Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2693]], camposKey:0168-583X 2007-04-01 Boron diffusion and activation in SOI and bulk Si: The role of the buried interface152156, 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Damage-Dopant Interactions 978-1-5386-5779-92018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21531]},camposKey: 1 4 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential 978-1-5386-5779-92018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21554]},camposKey: 1 4 Atomistic process simulation for future generation nanodevices 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21552]},camposKey: 34 39 Modeling of advanced ion implantation technologies in semiconductors 978-1-61284-131-111th International Workshop on Junction Technology (IWJT) 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=99]},camposKey: 176 180 Modeling of defect generation and dissolution in ion implanted semiconductors 978-0-7354-0876-0Ion Implantation Technology 2010: 18th International Conference on Ion Implantation Technology IIT 2010 1 2011-01-01 AIP, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21553]},camposKey: 1 4 Molecular implants and cold implants: Two new strategies for junction formation of future Si devices 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21555]},camposKey: 1 4 Simulation study of ion implanted defects associated to luminescence centers in silicon 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=109]},camposKey: 411 418 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization 978-1-56677-740-7Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009) 1 2009-01-01 IOP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=313]},camposKey: 479 483 Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices 978-1-4244-5639-02009 IEEE International Electron Devices Meeting (IEDM) 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=108]},camposKey: 12 15 Atomistic simulations of the effect of implant parameters on Si damage 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=309]},camposKey: 34 0 Carrier mobility degradation in highly B-doped junctions 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=101]},camposKey: 50 53 Influence of Si surface on damage generation and recombination 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=97]},camposKey: 535 539 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices 978-1-4244-2377-42008 IEEE International Electron Devices Meeting 1 2008-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=103]},camposKey: 237 248 Atomistic Simulation Techniques in Front-End Processing 978-1-60511-040-0Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14683]},camposKey: 71 76 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation 978-3-908451-56-3Theory, Modeling and Numerical Simulation of Multi-Physics Materials Behavior 1 2008-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=314]},camposKey: 29 32 Boron electrical activation in SOI compared to bulk si substrates 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=98]},camposKey: 17 20 Molecular dynamics modeling of octadecaborane implantation into Si 978-3-211-72860-4Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=106]},camposKey: 431 436 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=308]},camposKey: 151 154 Atomistic modeling of B activation and deactivation for ultra-shallow junction formation 978-0-7803-7826-1International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=307]},camposKey: 489 492 Dopant redistribution effects in preamorphized silicon during low temperature annealing 978-0-7803-7872-8IEEE International Electron Devices Meeting 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1960]},camposKey: 31 40 Modeling of dopant and defect interactions in Si process simulators 978-3-908450-83-2Defect and Diffusion Forum 1 2003-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=96]},camposKey: 879 882 A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node 978-0-7803-7462-1Electron Devices Meeting 2002 International 1 2002-01-01 IEEE][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4a910979, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1632f751, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6d6c5e02, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4c36d061, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@e2ed25f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@fa724b4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@34f70c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7afb9ab3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@23f0399, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@348b05ee, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@13a018e4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@35282621, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4ff1c8d6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@233900b3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@30cd4b08, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@44a07a1e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@556bd24, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6e0119a5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@34ce8a66, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@73f9766b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@43f65aad, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@255cbf47][][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f5317][][][][][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@467bf3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f933], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414d41], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f73e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413345], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413670], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41250c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ffc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4605d5], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411e1e]][][][][][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@159e7, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15503][]

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Artículos de revista (70)

Lopez P.; Aboy M.; Santos I.; Marques L.A.; Ullan M.; Pelaz L. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study . ACTA MATERIALIA 2022; 241.

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Capítulos de libros (29)

Pedro López ; M. Aboy ; I. Muñoz ; I. Santos ; L. A. Marqués ; C. Couso ; M. Ullán ; L. Pelaz. ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions. En: 2018 Spanish Conference on Electron Devices (CDE). IEEE; 2018. p. 1-4.

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Proyectos (13)

MODELADO ATOMÍSTICO DE LA IRRADIACIÓN DE ALTA ENERGÍA EN SEMICONDUCTORES. Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); LOPEZ MARTIN, PEDRO (IP); SANTOS TEJIDO, IVAN; MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA. Equipo de Trabajo: MARTIN ENCINAR, LUIS. PID2020-115118GB-I00. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, 10.13039/501100011033, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/09/2021-31/08/2024

Mnisterio de Ciencia e InnovaciónAEI
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Convenios/Contratos OTC (1)

ASESORAMIENTO PARA EL DESARROLLO DE DISPOSITIVOS TECNOLÓGICOS PARA CONGRESOS, EVENTOS Y MUSEOS. . Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); LOPEZ MARTIN, PEDRO; MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA. Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL.. 01/07/2014

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OTROS

Congresos (22)

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca 14/11/2018 - 16/11/2018
(Ponencia). Martin L.; Santos I.; Lopez P.; Marques L.; Aboy M.; Pelaz L. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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Proyectos de innovación docente (2)

MENTUm: Mejora de un Sistema de Mentorización Integral Profesores Tutores-Alumnos Mentores en la E.T.S.I. Telecomunicación de la Universidad de Valladolid - PID2019/118. Universidad de Valladolid. 01/09/2019.
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