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CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21555]},camposKey: 1 4 Simulation study of ion implanted defects associated to luminescence centers in silicon 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=109]},camposKey: 411 418 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization 978-1-56677-740-7Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009) 1 2009-01-01 IOP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=313]},camposKey: 479 483 Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices 978-1-4244-5639-02009 IEEE International Electron Devices Meeting (IEDM) 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=108]},camposKey: 12 15 Atomistic simulations of the effect of implant parameters on Si damage 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=309]},camposKey: 34 0 Carrier mobility degradation in highly B-doped junctions 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=101]},camposKey: 50 53 Influence of Si surface on damage generation and recombination 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=97]},camposKey: 535 539 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices 978-1-4244-2377-42008 IEEE International Electron Devices Meeting 1 2008-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=103]},camposKey: 237 248 Atomistic Simulation Techniques in Front-End Processing 978-1-60511-040-0Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14683]},camposKey: 71 76 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation 978-3-908451-56-3Theory, Modeling and Numerical Simulation of Multi-Physics Materials Behavior 1 2008-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=314]},camposKey: 29 32 Boron electrical activation in SOI compared to bulk si substrates 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SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. 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SISPAD 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=307]},camposKey: 489 492 Dopant redistribution effects in preamorphized silicon during low temperature annealing 978-0-7803-7872-8IEEE International Electron Devices Meeting 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1960]},camposKey: 31 40 Modeling of dopant and defect interactions in Si process simulators 978-3-908450-83-2Defect and Diffusion Forum 1 2003-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=96]},camposKey: 879 882 A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node 978-0-7803-7462-1Electron Devices Meeting 2002 International 1 2002-01-01 IEEE][][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@75840393, 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