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ifccomptador=6964]], camposKey:1938-5862 2010-01-01 Electrical characterization of high-pressure reactive sputtered Sc2O3 films on silicon287297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3811]], camposKey:0167-9317 2009-07-01 Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors16891691, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3812]], camposKey:1071-1023 2009-02-19 Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics416420, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3813]], camposKey:1071-1023 2009-02-17 Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition 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of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32669]},camposKey: 223 226 Electrical characterization of high-k based MIS capacitors using flat-band voltage transients 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32667]},camposKey: 227 230 Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32668]},camposKey: 8 11 Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2061]},camposKey: 287 298 Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment 1402043651Defects in HIgh-k Gate Dielectric Stacks 1 2006-01-27 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1958]},camposKey: 435 437 Damage buildup model with dose rate and temperature dependence 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1959]},camposKey: 405 408 Study of the amorphous phase of silicon using molecular dynamics simulation techniques 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, 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