[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=60780]], camposKey:0022-0248 2006-02-02 Spatially resolved photoluminescence and Raman spectroscopy of bandgap gratings fabricated in GaAs/AlAs superlattice waveguide using quantum well intermixing5356, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51392]], camposKey:0272-9172 2004-12-01 Reversible ordering of a-Si1-xGex by the combined effect of light and temperature171176, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51395]], camposKey:0021-8979 2004-07-01 Reversible crystallization of a-Si1-xGex alloys under the combined effect of light and temperature155163, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51397]], camposKey:0013-4651 2004-06-18 Porous SiGe nanostructures formed by electrochemical etching of thin Poly-SiGe films00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51400]], camposKey:0272-9172 2003-07-25 Formation of SiGe nanoparticles by dry and steam thermal oxidation of thin polycrystalline layers511516, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51404]], camposKey:0377-0486 2002-07-02 Micro-Raman study of iridium silicides8083, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8155]], camposKey:0021-8979 2001-09-01 Nucleation site location and its influence on the microstructure of solid-phase crystallized SiGe films25442552, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=60781]], camposKey:0921-5107 2001-03-22 Packaging-induced stress distribution in high power A1GaAs laser diodes by photoluminescence mapping188192, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51411]], camposKey:0040-6090 2001-02-15 Metastable crystalline state induced in amorphous SiGe layers under cw visible laser illumination227229, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51415]], camposKey:0272-9172 2000-12-01 A raman study of a metastable crystalline state in amorphous sige layers under cw laser illumination: Influence of the temperature387392, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51416]], camposKey:0272-9172 2000-12-01 Influence of the alloy composition on the thermodynamic parameters of nucleation and growth of SiGe147152, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51419]], camposKey:0040-6090 2000-01-10 Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization5661, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8107]], camposKey:0272-9172 2000-01-01 Analysis of the crystallization kinetics and microstructure of polycrystalline SiGe films by optical techniques221226, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=60782]], camposKey:0277-786X 2000-01-01 Micro-photoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes308316, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51423]], camposKey:0884-2914 1999-05-01 Study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques17321743, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51432]], camposKey:0267-0836 1998-01-01 MicroRaman and phase stepping microscopy analysis of growth defects in GaAs/GaAs epilayers12861290, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51441]], camposKey:1155-4320 1997-01-01 Analysis of large impurity atmospheres at dislocations and associated point defect reactions in differently n-doped GaAs crystals23392360, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51443]], camposKey:1012-0394 1997-01-01 On the defect structures in Te-doped GaAs425430, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51447]], camposKey:0921-5107 1996-12-15 A study of dislocations in GaAs:Te using electron and optical beams225229, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8115]], camposKey:0921-4534 1996-01-10 Oxygen content of YBaCuO thin films291297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8102]], camposKey:0921-4534 1996-01-01 A microRaman study of the structural properties of PLD high T-c superconducting thin films144154, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8122]], camposKey:0272-9172 1996-01-01 Study of grain boundaries in YBCO thin films using microRaman spectroscopy405410, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51455]], camposKey:0255-5476 1995-12-01 Study of the dislocation atmospheres in n-type GaAs by DSL photoetching, EBIC and microraman measurements17911796, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51459]], camposKey:0272-9172 1995-01-01 Characterization of flame grown diamond films by luminescence and EPR811816, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51458]], camposKey:0025-5408 1995-01-01 Raman microprobe analysis of patterned high Tc superconductor (YBCO) thin films771778, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51461]], camposKey:0957-4522 1994-12-01 MicroRaman analysis of twin lamellae in undoped LEC InP315320, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51465]], camposKey:0272-9172 1994-01-01 Bulk homogeneity of iron doped InP7176, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51468]], camposKey:0021-8979 1993-12-01 Cathodoluminescence and microRaman analysis of oxygen loss in electron irradiated YBa2Cu3O7-x62896292, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51470]], camposKey:0921-5107 1993-06-30 Characterization of the homogeneity of semi-insulating InP by the spatially resolved photocurrent105108][][][Llibres{id=com.sigma.fs3.argos.domain.gpc.GpcLlibresPK[ifcactivitat=LLI, ifccomptador=117852],camposKey=978-84-1320-122-1Manual de resiliencia: superar, aprender y crecer 1 2021-01-01 Ediciones Universidad de Valladolid}][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5026bdfb, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@488be622, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@73f15495, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2414b460, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@41b80c7c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5695589f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2fb9fb24, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2e0ffd07, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2fd5cf56, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@53783b93, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@33f89a03][][][][][][][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413bd8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412412], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4608b7], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460780], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4608a4], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4120cd], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460761], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460743], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@46061a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4605cc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413d90], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460461], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411eac], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f3c6], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f3de], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f484], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f344]][][][][][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15fbe, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@136b6][]