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properties of atomic layer deposited hafnium-rich silicate films on n-type silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3822]], camposKey:0021-8979 2006-03-01 Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8947]], camposKey:1568-2609 2006-01-01 Disordered structure and density of gap states in high-permittivity thin solid films1230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8946]], camposKey:1568-2609 2006-01-01 Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment2870, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3823]], camposKey:0268-1242 2005-10-01 A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition10441051, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3824]], camposKey:0026-2714 2005-05-01 Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition949952, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3825]], camposKey:0040-6090 2005-03-01 Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates222229, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5370]], camposKey:0026-2714 2005-01-01 ON THE INFLUENCE OF SUBSTRATE CLEANING METHOD AND RAPID THERMAL ANNEALING CONDITIONS ON THE ELECTRICAL CHARACTERISTICS OF AL/SINX/SIO2/SI FABRICATED BY ECR-CVD978981, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3826]], camposKey:0268-1242 2004-09-01 The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon11411148, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3827]], camposKey:0021-8979 2004-08-01 Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon13651372, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6960]], camposKey:0272-9172 2004-01-01 On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2,Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films147152, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5382]], camposKey:0272-9172 2003-01-01 On the interface quality of MIS structures fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5¿Ta2O5¿Nb2O5 dielectric thin films00][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21718]},camposKey: 165 178 RRAM memories with ALD high-k dielectrics: electrical characterization and analytical modelling. 978-953-51-3067-3Thin Film Processes - Artifacts on Surface Phenomena and Technological Facets 1 2017-01-01 Intech, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21716]},camposKey: Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors 9781510805507Materials for End-of-Roadmap Devices in Logic, Power and Memory. 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