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damage accumulation model for ion implantation into silicon235239, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7765]], camposKey:0021-8979 2003-07-01 Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films163168, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7755]], camposKey:0168-583X 2003-04-01 Statistical 3D damage accumulation model for ion implant simulators138142, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7764]], camposKey:0038-1101 2002-09-01 Enhanced modelization of ion implant simulation in compound semiconductors13151324, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7747]], camposKey:0021-8979 2002-01-15 Improved binary collision approximation ion implant simulators658667, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7753]], camposKey:0168-583X 2001-05-01 Algorithm for statistical noise reduction in three-dimensional ion implant simulations433438, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57014]], camposKey:2469-9950 2001-01-01 Stability of defects in crystalline silicon and their role in amorphization19][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21566]},camposKey: 1 7 Project-based learning in Engineering of Electronic Systems: Portable Video Console 978-1-7281-6732-92020 XIV Technologies Applied to Electronics Teaching Conference (TAEE) 1 2020-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21561]},camposKey: 406 409 A parallel, CT-sigma delta based ADC for OFDM UWB receivers in 130 nm CMOS 978-1-4577-1845-82011 18th IEEE International Conference on Electronics, Circuits, and Systems 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1958]},camposKey: 435 437 Damage buildup model with dose rate and temperature dependence 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=94]},camposKey: 26 29 The role of incomplete interstitial-vacancy recombination on silicon amorphization 978-3-7091-7278-0 Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien][][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@74e184e0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@c9a585d, 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