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JIMENEZ LOPEZ, JUAN IGNACIO

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=80356]], camposKey:2475-9953 2023-10-01 Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=80839]], camposKey:0361-5235 2023-08-01 Comparison of Outdoor and Indoor PL and EL Images in Si Solar Cells and Panels for Defect Detection and Classification51895198, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81085]], camposKey:1996-1073 2023-07-01 Advanced Characterization of 1 eV GaInAs Inverted Metamorphic Solar Cells00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=80357]], camposKey:0798-4545 2023-06-16 CONTROLLING DOPING PROFILES OF 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CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32332]},camposKey: 309 312 Degradation signatures of high power laser diodes 9781467346689- 1 2013-04-08 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32331]},camposKey: 219 222 Modelling the thermal conductivity of semiconductor NWs; A step forward to the increase of the thermoelectric figure of merit 9781467346689- 1 2013-04-08 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=29712]},camposKey: 0 0 Modelling the thermal conductivity of semiconductor NWs; a step forward to the increase of the thermoelectric figure of merit 14673466672013 Spanish Conference on Electron Devices 1 2013-02-12 Universidad de Valladolid , CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1859]},camposKey: 313 316 Deep level defects on mono-like and polycrystalline silicon solar cells 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1975]},camposKey: 353 356 Low-Cost system for full-wafer photoluminescence characterization of photovoltaic silicon 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14647]},camposKey: 63 0 Cathodoluminescence Study of Ammonothermal GaN Crystals 131217370XThe Butler Project - ISBN 1 2012-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14646]},camposKey: 137 0 Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods 1471611450Ollie & Quentin ISBN 1 2012-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=22024]},camposKey: 457 461 Estudio mediante espectroscopia raman de nanohilos semiconductores del grupo IV 9788492522248XI Congreso Nacional de Materiales 1 2010-01-01 Universidad de Zaragoza, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14648]},camposKey: 19 0 InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells 1471611450Ollie & Quentin ISBN 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1969]},camposKey: 241 0 A Study of Conformal GaAs on Si Layers by Micro-Raman and Spectral Imaging Cathodoluminescence 978-1-60511-038-7- 1 2008-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1976]},camposKey: 193 0 Nanostructures with Group IV Nanocrystals Obtained by LPCVD and Thermal Annealing of SiGeO Layers 978-1-60511-036-3- 1 2008-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14644]},camposKey: 1527 0 Structural and optical characterization of pure ZnO films synthesised by thermal annealing on GaSb single crystals 1471611450Ollie & Quentin ISBN 1 2007-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=22422]},camposKey: 217 221 Microscopic Optical Interferometry Study of the Cottrell Atmospheres in Si-Doped GaAs 978-0-08-044648-6Recent Advances in Multidisciplinary Applied Physics: Proceedings of the First International Meeting on Applied Physics (APHYS-2003) 1 2005-01-01 Elsevier, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=22037]},camposKey: Assessment of the short and long range homogeneity of MOVPE-grown InGaN epilayers 88-8305-007-X10th European Workshop on MOVPE, Lecce (Italy) 8¿11 June 2003 1 2003-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1978]},camposKey: 538 541 Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL 0-7803-7704-4 International Conference on Indium Phosphide and Related Materials, 2003. 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1967]},camposKey: 417 422 Doping profiles of n-type GaAs layers grown on Si by the conformal method 1-55899-628-1Progress in Semiconductor Materials for Optoelectronic Applications: 1 2002-06-19 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1970]},camposKey: 74 81 Microcharacterization of Conformal GaAs on Si layers by spatially resolved optical techniques 3540433120Nanoscale Spectroscopy and Its Applications to Semiconductor Research 1 2002-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1966]},camposKey: 221 226 Analysis of the crystallization kinetics and microstructure of polycrystalline SiGe films by optical techniques 1-55899-496-3Optical microstructural characterization of semiconductors : symposium held November 29-30, 1999, Boston, Massachusetts, U.S.A. 1 2000-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1971]},camposKey: 405 410 Study of grain boundaries in YBCO thin films using microRaman spectroscopy 1-55899-304-5Epitaxial Oxide Thin Films II: 1 1996-03-29 -][][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61782]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63544]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61888]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63033]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62956]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62570]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=56895]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61782]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63544]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61888]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63033]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62956]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62570]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=56895]]][][][com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=30330]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145637721]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145637698]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145636272]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145632179]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145628618]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145628503]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=69406]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145627484]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145627017]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145627483]]][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3cac23b6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@86c8fbd, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@58513bfd, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@277ae65f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7a96d095, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@166bb91d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@47b4e6fe, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@378cb849, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7bd2d455, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@303a2963, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5059ba8c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2451e3e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6fd8025f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@e484ff6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@13d80969, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@39c641c2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@16a3765f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5a58ac82, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@99875e1, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@25bed41, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@fc772db, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1064e31d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5a99ab8d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@775647a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@33909fe5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4dbfe81, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1309e854, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3ff318fb, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@8abc757, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@53df1f35, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@f481652, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@28dbf380, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7e1c18b3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@559186f2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1aa4e094, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6d1457b3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@73531322, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2aacadac, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1731482d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@58d72cb7, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@33f6ee8c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7c78f493, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6195bb11, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@c69100, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4408d1a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3fa72d6d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@732644bb, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@47dc954e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4774f8f2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@413e7934, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7cfe34, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@23297d90, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@437ab26f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@71bf94ed, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@165549b0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7e787317, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@68074f7d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6592a66c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@59366ba7, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@64eb4b5d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@36c59c1a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4614fd68, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2c95cd5e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@121aca32, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@825b127, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@693be2f6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6bc62db2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2fc931a2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@ac011f5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3c5a7e09, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@66ab6f8d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@8906db, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@a4cf086, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@65097df0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@58e3a1db][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4b3a37c8][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5d3e28, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5d3dc9, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f6385, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5d3e5e, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f6567, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5d3dc8, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5d3e19, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5d3dc7, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f6894, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f5707, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f5b1c, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f5fc0, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f625b, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f5b3a, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@373dff, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@372521, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@372216, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@373071, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f609e][][][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=56831]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=56693]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=56712]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=56831]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=56693]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=56712]]][][com.sigma.fs3.argos.domain.gpc.GpcPatents[id=com.sigma.fs3.argos.domain.gpc.GpcPatentsPK[ifcactivitat=PAT, ifccomptador=1363]], com.sigma.fs3.argos.domain.gpc.GpcPatents[id=com.sigma.fs3.argos.domain.gpc.GpcPatentsPK[ifcactivitat=PAT, ifccomptador=1358]], com.sigma.fs3.argos.domain.gpc.GpcPatents[id=com.sigma.fs3.argos.domain.gpc.GpcPatentsPK[ifcactivitat=PAT, ifccomptador=1359]], com.sigma.fs3.argos.domain.gpc.GpcPatents[id=com.sigma.fs3.argos.domain.gpc.GpcPatentsPK[ifcactivitat=PAT, ifccomptador=1280]], com.sigma.fs3.argos.domain.gpc.GpcPatents[id=com.sigma.fs3.argos.domain.gpc.GpcPatentsPK[ifcactivitat=PAT, ifccomptador=1288]], com.sigma.fs3.argos.domain.gpc.GpcPatents[id=com.sigma.fs3.argos.domain.gpc.GpcPatentsPK[ifcactivitat=PAT, ifccomptador=1121]]][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@56fa83], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@56f25a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@5b956b], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@467c1f], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f35b], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4132ae], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4133a1], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41258a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41255b], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413bd8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412412], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@5be6cd], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460890], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460898], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4120cd], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4605cc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413d90], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460461], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411eac], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4124f8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412a1b], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411bed], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f3de], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413ddb], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413519], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f484], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412754], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413488], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4125df], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413d65], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f33f], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413b5e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413afe], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413556]][][][][][][][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=25951]},camposKey: 74 77 Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes 978166544452113th Spanish Conference on Electron Devices, CDE 2021 1 2021-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=22241]},camposKey: 1079 1080 Influence of large periods of DC current injection in c-Si photovoltaic panels 3-936338-60-436th European Photovoltaic Solar Energy Conference and Exhibition 1 2019-01-01 ]

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Kamath A.; Skibitzki O.; Spirito D.; Dadgostar S.; Martinez I.M.; Schmidbauer M.; Richter C.; Kwasniewski A.; Serrano J.; Jimenez J.; Golz C.; Schubert M.A.; Tomm J.W.; Niu G.; Hatami F. Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer . PHYSICAL REVIEW MATERIALS 2023; 7(10).

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Souto, J.; Pura, J.L.; Jiménez, J. Microscopic degradation and failure processes in high-power diode lasers. En: Institute of Electrical and Electronics Engineers,. Proceedings of the 2019 IEEE High Power Diode Lasers and Systems Conference. IEEE; 2019. p. 13-14.

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Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.;Campabadal F.; Garcia H. (2021). Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes. En -. 13th Spanish Conference on Electron Devices, CDE 2021. 1 ed. IEEE; 2021. p. 74-77.
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HACIA LA OBTENCIÓN DE CÉLULAS SOLARES DE ALTO RENDIMIENTO: CARACTERIZACIÓN CON RESOLUCIÓN NANOMÉTRICA DE MATERIALES AVANZADOS. Equipo Investigadores: SOUTO BARTOLOME, JORGE MANUEL (IP); SERRANO GUTIERREZ, JORGE (IP); JIMENEZ LOPEZ, JUAN IGNACIO; MARTINEZ SACRISTAN, OSCAR. Equipo de Trabajo: PURA RUIZ, JOSE LUIS; MEDIAVILLA MARTINEZ, IRENE; HINOJOSA CHASIQUIZA, VANESSA GISELLE. TED2021-130786B-I00. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, UNIÓN EUROPEA.-NEXT GENERATION UE, PLAN DE RECUPERACIÓN, TRANSFORMACIÓN Y RESILIENCIA, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/12/2022-30/11/2024

Next Generation-UEMnisterio de Ciencia e InnovaciónAEIPlan de Recuperación, transformación y Resiliencia
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ENERTIS II_M.A. REBOLLO. Equipo Investigadores: GONZALEZ REBOLLO, MIGUEL ANGEL (IP); MARTINEZ SACRISTAN, OSCAR; JIMENEZ LOPEZ, JUAN IGNACIO. Entidades Participantes: FUNDACIÓN PARQUE CIENTIFICO UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: SERVICIO TECNICO REPETITIVO.. 01/03/2021

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CONTRATO PREDOCTORAL JUNTA CASTILLA Y LEÓN DE IRENE MEDIAVILLA MARTINEZ:Mejora de la estabilidad y la eficiencia en células solaresavanzadas basadas en perovskitas y nanohilos semiconductores. JIMENEZ LOPEZ, JUAN IGNACIO (Director). MEDIAVILLA MARTINEZ, IRENE (Beneficiario). 20/09/2021 - 16/07/2025. 94.299,99 EUR.

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(Ponencia). Torres A.; Jimenez J.; Vega B.; de Saja J. NON-DEBYE BEHAVIOUR OF DIPOLAR RELAXATION IN SYSTEMS WITH DIPOLAR INTERACTION.
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CRECIMIENTO DE GRAN CALIDAD DE LEDS DE III-V SOBRE SILICIO POR EPITAXIA EN FASE LÍQUIDA DE VAPOR DE METALORGÁNICO., VALLADOLID ( ESPAÑA ) 01/03/1998 - 01/12/2000
Comité organizador.
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Patentes (6)

Ignacio Morales Aragonés, Sara Gallardo Saavedra, Angel Moretón Fernández, Luis Hernández Callejo, Victor Alonso Gómez, Miguel Ángel González Rebollo, Oscar Martinez Sacristán, Juan Jiménez López. SISTEMA DE COMUNICACIONES SOBRE CABLEADO DE CORRIENTE CONTINUA EN INSTALACIONES SOLARES FOTOVOLTAICAS. P202030280. 2020
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Estancias de investigación (3)

ACCIÓN INTEGRADA CON FRANCIA. SÍNTESIS Y CARACTERIZACIÓN DE MATERIALES NANOESTRUCTURADOS EN CAPAS DELGADAS PARA LA MICRO Y OPTOELECTRÓNICA.. 01/01/2005 - 31/12/2005
     INSTITUT DES MATERIAUX JEAN ROUXEL . NANTES ( FRANCIA )


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