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camposKey:0267-0836 1995-01-01 Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors10741078, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3857]], camposKey:0268-1242 1994-12-01 Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique16371648, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40608]], camposKey:0951-3248 1994-01-01 A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON4750, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6951]], camposKey:0021-8979 1992-07-15 INFLUENCE OF REFILLING EFFECTS ON DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS IN SE-DOPED ALXGA1-XAS525530, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6949]], camposKey:0038-1101 1992-03-01 ADMITTANCE SPECTROSCOPY IN JUNCTIONS285297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6955]], camposKey:0021-8979 1991-04-15 CHARACTERIZATION OF THE DX CENTERS IN ALGAAS-SI BY ADMITTANCE SPECTROSCOPY43004305, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3860]], camposKey:0021-8979 1990-12-01 Characterization of the EL2 center in GaAs by optical admittance spectroscopy63096314, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6950]], camposKey:0038-1101 1989-01-01 Constant-capacitance deep-level optical spectroscopy287293, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6957]], camposKey:0038-1101 1986-01-01 Electron thermal emission rates of nickel centers in silicon883884][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=30358]},camposKey: 0 0 Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux 16654671772022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) 1 2022-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28731]},camposKey: 0 0 The role of defects in solar cells: Control and detection defects in solar cells 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