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com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3839]], camposKey:0021-4922 2000-11-01 Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures62126215, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3840]], camposKey:0026-2714 1999-12-01 Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress659662, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3842]], camposKey:0021-8979 1999-12-01 Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced AI/SiNx:H/InP metal-insulator-semiconductor structures fabrication69246930, 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camposKey:0021-8979 1998-01-01 Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method600603, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3853]], camposKey:0021-8979 1997-01-01 Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP31433150, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3851]], camposKey:0021-8979 1997-01-01 Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs43384345, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3852]], camposKey:0003-6951 1997-01-01 Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures826828, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3854]], camposKey:0038-1101 1997-01-01 Thermal emission processes of DX centres in AlxGa1-xAs:Si103109, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5351]], camposKey:0951-3248 1996-01-01 Determination of three-dimensional deep level defect distribution by Capacitance-Voltage Transient Technique (CVTT121126, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3855]], camposKey:0021-8979 1996-01-01 Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions310315, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3856]], camposKey:0021-8979 1995-12-01 Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP53255330, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=12031]], camposKey:0267-0836 1995-01-01 Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors10741078, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3857]], camposKey:0268-1242 1994-12-01 Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique16371648, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3858]], camposKey:0168-583X 1993-01-01 Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon13621366, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6951]], camposKey:0021-8979 1992-07-15 INFLUENCE OF REFILLING EFFECTS ON DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS IN SE-DOPED ALXGA1-XAS525530, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6949]], camposKey:0038-1101 1992-03-01 ADMITTANCE SPECTROSCOPY IN JUNCTIONS285297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3859]], camposKey:0021-8979 1992-01-01 A study of metal-oxide-semiconductor capacitors fabricated on SF 6 and SF6+Cl2 reactive-ion-etched Si27102716, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=69147]], camposKey:0013-4651 1992-01-01 Characterization of the Electrical Damage due to Polysilicon RIE(SF6+ CL2Plasma) Etching193195, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6955]], camposKey:0021-8979 1991-04-15 CHARACTERIZATION OF THE DX CENTERS IN ALGAAS-SI BY ADMITTANCE SPECTROSCOPY43004305, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3860]], camposKey:0021-8979 1990-12-01 Characterization of the EL2 center in GaAs by optical admittance spectroscopy63096314, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3861]], camposKey:0038-1101 1990-01-01 Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance987992, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3862]], camposKey:0038-1101 1990-01-01 Rie-induced damage in MOS structures14191423, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6950]], camposKey:0038-1101 1989-01-01 Constant-capacitance deep-level optical spectroscopy287293, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6957]], camposKey:0038-1101 1986-01-01 Electron thermal emission rates of nickel centers in silicon883884][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=30358]},camposKey: 0 0 Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux 16654671772022 11th International 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Institute of Electrical and Electronics Engineers (IEEE ), CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1865]},camposKey: 285 288 Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1857]},camposKey: 349 352 Photocurrent measurements for solar cells characterization 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28728]},camposKey: 0 0 Photocurrent measurements for solar cells characterization 97814673466652013 Spanish Conference on Electron Devices (CDE 2013) 1 2013-01-01 Institute of Electrical and Electronics Engineers (IEEE ), CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1858]},camposKey: 301 304 The role of defects in solar cells: Control and detection Defects in solar cells 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28730]},camposKey: 91 94 Un clamor general 8461646649Espacio imagen palabra 1 2013-01-01 Instituto Núñez de Arce , CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21519]},camposKey: Electrical Characterization of High-K Dielectric Gates for Microelectronic Devices 9789535107644Dielectric Material 1 2012-01-01 IntechOpen, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21688]},camposKey: A study of tunneling assisted charge exchange on the inner interface of high-k dielectrics s tacks 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21687]},camposKey: Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1864]},camposKey: 349 359 Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics 978-1-56677-903-6- 1 2011-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21689]},camposKey: Negative-resistance effect in Al2O3 based and nanolaminated MIS structures 978-1-4244-7865-12011 Spanish 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com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134dc]][][][][][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@13577, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@1357a, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@13579, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@13578][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=25951]},camposKey: 74 77 Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes 978166544452113th Spanish Conference on Electron Devices, CDE 2021 1 2021-01-01 IEEE]