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SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=105]},camposKey: 37 40 Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1959]},camposKey: 405 408 Study of the amorphous phase of silicon using molecular dynamics simulation techniques 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=106]},camposKey: 431 436 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. 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SISPAD 2003 1 2003-01-01 IEEE][][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@330b7e79, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@38c0d5a5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@d2f32cc, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7b635a57, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@13730bf4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2d2099c2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@59ed77f8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@38bd2f70, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@331abf38, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1addde10, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@28bd3804, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@792a54cc, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1f2fc7ae, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6bf6a705, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2a4acf67, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1ed62d6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@601ed7f2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3e0e9a7b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@42c34b2a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@28d26a76, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3ee599d9, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@74f2013c][][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@61e2fb, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@6427d0][][][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=58323]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=59790]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=58323]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=59790]]][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@467bf3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f933], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414d41], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f73e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413345], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413670], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41250c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ffc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350]][][][][][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@171d4][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=33362]},camposKey: 1 4 First Principles Characterization of PnVm Clusters in Crystalline Silicon 979-8-3503-0240-0Proceedings of the 14th Spanish Conference on Electron Devices (CDE 2023) 1 2023-01-01 , CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=33363]},camposKey: 1 4 Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates 979-8-3503-0240-0Proceedings of the 14th Spanish Conference on Electron Devices (CDE 2023) 1 2023-01-01 ]