Inicio > PELAZ MONTES, MARIA LOURDES

PELAZ MONTES, MARIA LOURDES

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
Electronica
 
lourdes.pelaz@uva.es

Índice H en Scopus: 22
 

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75920]], camposKey:2513-0390 2023-01-01 Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75099]], camposKey:1359-6454 2022-12-01 Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75148]], camposKey:1369-8001 2022-12-01 Rapid thermal process driven intra-die device variations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75100]], camposKey:0003-6951 2022-08-01 Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65531]], camposKey:0168-583X 2022-01-01 Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons4248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65530]], camposKey:0168-583X 2022-01-01 Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism5459, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65532]], camposKey:1369-8001 2021-01-01 Achieving junction stability in heavily doped epitaxial Si:P00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56852]], camposKey:0022-3093 2019-01-01 Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study2027, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56850]], camposKey:0168-583X 2019-01-01 On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon179183, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56851]], camposKey:1359-6454 2019-01-01 {001} loops in silicon unraveled192201, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56854]], camposKey:0361-5235 2018-01-01 Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation49554958, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56853]], camposKey:0361-5235 2018-01-01 W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations50455049, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=620]], camposKey:2163-4971 2017-01-01 Characterization of amorphous Si generated through classical molecular dynamics simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=630]], camposKey:2163-4971 2017-01-01 Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=600]], camposKey:1369-8001 2017-01-01 Improved physical models for advanced silicon device processing6279, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6420]], camposKey:0031-9007 2017-01-01 Ultrafast Generation of Unconventional {001 } Loops in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=631]], camposKey:1946-1569 2016-01-01 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion3537, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=596]], camposKey:0022-3727 2016-01-01 Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=599]], camposKey:1369-8001 2016-01-01 Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon235238, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6589]], camposKey:0168-583X 2015-01-01 A detailed approach for the classification and statistical analysis of irradiation induced defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=628]], camposKey:0168-583X 2015-01-01 Atomistic modeling of ion implantation technologies in silicon148151, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9084]], camposKey:1569-8025 2014-01-01 Introduction: Special Issue on Process Modeling Introduction12, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2694]], camposKey:1882-0778 2014-01-01 Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=612]], camposKey:1569-8025 2014-01-01 Modeling of defects, dopant diffusion and clustering in silicon4058, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56910]], camposKey:1946-1569 2013-01-01 Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach3336, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9085]], camposKey:1099-0062 2012-01-01 Codiffusion of Phosphorus and Carbon in Preamorphized Ultrashallow Junctions00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9090]], camposKey:0094-243X 2012-01-01 Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes221224, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9099]], camposKey:1539-3755 2012-01-01 Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon111, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=593]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulation of the regrowth of nanometric multigate Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=623]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulations of damage production by thermal spikes in Ge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57031]], camposKey:0094-243X 2012-01-01 Preface: 19th International Conference on Ion Implantation Technology11, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=592]], camposKey:0094-243X 2012-01-01 Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study229232, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=624]], camposKey:2469-9950 2011-01-01 Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2695]], camposKey:0021-8979 2011-01-01 Kinetics of large B clusters in crystalline and preamorphized silicon114, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=578]], camposKey:0003-6951 2011-01-01 The curious case of thin-body Ge crystallization00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9083]], camposKey:0040-6090 2010-02-26 Symposium I: Silicon and germanium issues for future CMOS devices Preface22992300, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2696]], camposKey:0894-3370 2010-01-01 Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions266284, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=603]], camposKey:0094-243X 2010-01-01 Modeling of defect generation and dissolution in ion implanted semiconductors176180, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=629]], camposKey:2469-9950 2010-01-01 Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=601]], camposKey:1071-1023 2010-01-01 Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=598]], camposKey:1434-6028 2009-12-01 Front-end process modeling in silicon323359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=604]], camposKey:0021-8979 2009-04-15 Improved atomistic damage generation model for binary collision simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=621]], camposKey:1938-5862 2009-01-01 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization411418, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11426]], camposKey:0163-1918 2009-01-01 Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices10, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2699]], camposKey:0921-5107 2008-12-05 Atomistic modeling of FnVm complexes in pre-amorphized Si207210, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2698]], camposKey:0921-5107 2008-12-05 Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects247251, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11427]], camposKey:0163-1918 2008-12-01 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9106]], camposKey:0021-8979 2008-05-01 Si interstitial contribution of F(+) implants in crystalline Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=609]], camposKey:0272-9172 2008-01-01 Atomistic Simulation Techniques in Front-End Processing237248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9107]], camposKey:1071-1023 2008-01-01 Evolution of fluorine and boron profiles during annealing in crystalline Si377381, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9109]], camposKey:0272-9172 2008-01-01 F+ Implants in Crystalline Si: The Si Interstitial Contribution2790, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=615]], camposKey:0272-9172 2008-01-01 First Principles Study of Boron in Amorphous Silicon2230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=595]], camposKey:1012-0394 2008-01-01 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation7176, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=606]], camposKey:2469-9950 2008-01-01 Structural transformations from point to extended defects in silicon: A molecular dynamics study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=625]], camposKey:2469-9950 2007-10-01 Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=616]], camposKey:0021-8979 2007-05-01 Atomistic analysis of the annealing behavior of amorphous regions in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2693]], camposKey:0168-583X 2007-04-01 Boron diffusion and activation in SOI and bulk Si: The role of the buried interface152156, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=610]], camposKey:0168-583X 2007-02-01 Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models110113, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=575]], camposKey:0168-583X 2007-02-01 Molecular dynamics study of B18H22 cluster implantation into silicon242246, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=602]], camposKey:0168-583X 2007-02-01 Multiscale modeling of radiation damage and annealing in Si95100, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=574]], camposKey:1098-0121 2006-11-01 Characterization of octadecaborane implantation into Si using molecular dynamics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=581]], camposKey:1098-0121 2006-11-01 Modeling of damage generation mechanisms in silicon at energies below the displacement threshold00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=611]], camposKey:1071-1023 2006-09-01 Atomistic modeling of dopant implantation, diffusion, and activation24322436, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39864]], camposKey:0003-6951 2006-05-08 Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=613]], camposKey:1742-6588 2006-01-01 An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon2840, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2691]], camposKey:0018-9383 2006-01-01 Boron pocket and channel deactivation in nMOS transistors with SPER junctions7177, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9105]], camposKey:0094-243X 2006-01-01 Fluorine profile distortion upon annealing by the presence of a CVD grown boron box290, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6590]], camposKey:0168-583X 2006-01-01 Physical insight into ultra-shallow junction formation through atomistic modeling00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=582]], camposKey:0921-5107 2005-12-05 Amorphous layer depth dependence on implant parameters during Si self-implantation379382, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=622]], camposKey:0921-5107 2005-12-05 Atomistic simulations in Si processing: Bridging the gap between atoms and experiments7280, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2692]], camposKey:0921-5107 2005-12-05 Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth205209, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9091]], camposKey:0921-5107 2005-12-05 Boron diffusion in amorphous silicon245248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9093]], camposKey:0921-5107 2005-12-05 E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies12, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=627]], camposKey:0921-5107 2005-12-05 Molecular dynamics characterization of as-implanted damage in silicon372375, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=597]], camposKey:0021-8979 2005-05-15 Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=576]], camposKey:1098-0121 2005-02-01 Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=608]], camposKey:0003-6951 2005-01-17 Role of silicon interstitials in boron cluster dissolution00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=619]], camposKey:0927-0256 2005-01-01 A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework112117, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=617]], camposKey:0927-0256 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SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=105]},camposKey: 37 40 Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2096]},camposKey: 29 32 Fluorine profile distortion upon annealing by the presence of a CVD grown boron box 978-0-7354-0365-9Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 1 2006-01-01 AIP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1958]},camposKey: 435 437 Damage buildup model with dose rate and temperature dependence 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1959]},camposKey: 405 408 Study of the amorphous phase of silicon using molecular dynamics simulation techniques 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=106]},camposKey: 431 436 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=308]},camposKey: 151 154 Atomistic modeling of B activation and deactivation for ultra-shallow junction formation 978-0-7803-7826-1International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=307]},camposKey: 489 492 Dopant redistribution effects in preamorphized silicon during low temperature annealing 978-0-7803-7872-8IEEE International Electron Devices Meeting 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1960]},camposKey: 31 40 Modeling of dopant and defect interactions in Si process simulators 978-3-908450-83-2Defect and Diffusion Forum 1 2003-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=96]},camposKey: 879 882 A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node 978-0-7803-7462-1Electron Devices Meeting 2002 International 1 2002-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=94]},camposKey: 26 29 The role of incomplete interstitial-vacancy recombination on silicon amorphization 978-3-7091-7278-0 Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2094]},camposKey: 784 788 Defects and diffusion in MeV implanted silicon 978-1-56396-825-9Application of Accelerators in Research and Industry: Proceedings of the Fifteenth International Conference: Denton, Texas 1 1999-01-01 AIP Publishing , CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2092]},camposKey: 75 86 Dose, energy, and ion species dependence of the effective plusfactor for transient enhanced diffusion 978-1-56677-224-2Process Physics Modeling in Semi Conductor Technology: Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology 1 1999-01-01 The Electrochemical Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1929]},camposKey: 43 53 Atomistic modeling of point and extended defects in crystalline materials 978-1-55899-438-6Silicon Front-End Technology 1 1998-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2095]},camposKey: 1232 1240 Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation 978-1-56677-193-1Silicon Materials Science and Technology: Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology, Volume II 1 1998-01-01 The Electrochemical Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1925]},camposKey: 341 346 Atomistic model of transient enhanced diffusion and clustering of boron in silicon 978-1-55899-373-0Defects and Diffusion in Silicon Processing 1 1997-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2093]},camposKey: 467 470 Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions 978-0-7803-4100-5International Electron Devices Meeting. 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Artículos de revista (130)

Martin-Encinar L.; Marques L.A.; Santos I.; Lopez P.; Pelaz L. Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study. Advanced Theory and Simulations 2023; 0.

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Capítulos de libros (45)

Pedro López ; M. Aboy ; I. Muñoz ; I. Santos ; L. A. Marqués ; C. Couso ; M. Ullán ; L. Pelaz. ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions. En: 2018 Spanish Conference on Electron Devices (CDE). IEEE; 2018. p. 1-4.

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AYUDA A LA INVESTIGACIÓN

Proyectos (18)

MODELADO ATOMÍSTICO DE LA IRRADIACIÓN DE ALTA ENERGÍA EN SEMICONDUCTORES. Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); LOPEZ MARTIN, PEDRO (IP); SANTOS TEJIDO, IVAN; MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA. Equipo de Trabajo: MARTIN ENCINAR, LUIS. PID2020-115118GB-I00. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, 10.13039/501100011033, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/09/2021-31/08/2024

Mnisterio de Ciencia e InnovaciónAEI
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Convenios/Contratos OTC (1)

ASESORAMIENTO PARA EL DESARROLLO DE DISPOSITIVOS TECNOLÓGICOS PARA CONGRESOS, EVENTOS Y MUSEOS. . Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); LOPEZ MARTIN, PEDRO; MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA. Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL.. 01/07/2014

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Otras ayudas y becas (1)

AYUDAS PIF-FPI (2+2) DE MANUEL RUIZ PRIETO PARA LA REALIZACIÓN DE LA TESIS DOCTORAL. PELAZ MONTES, MARIA LOURDES (Director). RUIZ PRIETO, MANUEL (Beneficiario). 01/10/2013 - 30/09/2017. 71.121,00 EUR.

Ministerio de Economía y Competitividad
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OTROS

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Congresos (28)

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca 14/11/2018 - 16/11/2018
(Ponencia). Martin L.; Santos I.; Lopez P.; Marques L.; Aboy M.; Pelaz L. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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