Inicio > LOPEZ MARTIN, PEDRO

LOPEZ MARTIN, PEDRO

PROFESORES TITULARES DE UNIVERSIDAD
Electricidad y Electrónica
Electronica
 
pedrol@uva.es

Índice H en Scopus: 14
 

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75920]], camposKey:2513-0390 2023-01-01 Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75099]], camposKey:1359-6454 2022-12-01 Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65531]], camposKey:0168-583X 2022-01-01 Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons4248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65530]], camposKey:0168-583X 2022-01-01 Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism5459, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56852]], camposKey:0022-3093 2019-01-01 Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study2027, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56850]], camposKey:0168-583X 2019-01-01 On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon179183, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56851]], camposKey:1359-6454 2019-01-01 {001} loops in silicon unraveled192201, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56854]], camposKey:0361-5235 2018-01-01 Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation49554958, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=76841]], camposKey:2163-4971 2018-01-01 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56853]], camposKey:0361-5235 2018-01-01 W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations50455049, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=620]], camposKey:2163-4971 2017-01-01 Characterization of amorphous Si generated through classical molecular dynamics simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=630]], camposKey:2163-4971 2017-01-01 Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=600]], camposKey:1369-8001 2017-01-01 Improved physical models for advanced silicon device processing6279, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6420]], camposKey:0031-9007 2017-01-01 Ultrafast Generation of Unconventional {001 } Loops in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=631]], camposKey:1946-1569 2016-01-01 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion3537, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=596]], camposKey:0022-3727 2016-01-01 Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=599]], camposKey:1369-8001 2016-01-01 Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon235238, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6589]], camposKey:0168-583X 2015-01-01 A detailed approach for the classification and statistical analysis of irradiation induced defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=628]], camposKey:0168-583X 2015-01-01 Atomistic modeling of ion implantation technologies in silicon148151, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2694]], camposKey:1882-0778 2014-01-01 Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=612]], camposKey:1569-8025 2014-01-01 Modeling of defects, dopant diffusion and clustering in silicon4058, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56910]], camposKey:1946-1569 2013-01-01 Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach3336, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9090]], camposKey:0094-243X 2012-01-01 Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes221224, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9099]], camposKey:1539-3755 2012-01-01 Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon111, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=593]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulation of the regrowth of nanometric multigate Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=623]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulations of damage production by thermal spikes in Ge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=592]], camposKey:0094-243X 2012-01-01 Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study229232, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2696]], camposKey:0894-3370 2010-01-01 Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions266284, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=603]], camposKey:0094-243X 2010-01-01 Modeling of defect generation and dissolution in ion implanted semiconductors176180, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=601]], camposKey:1071-1023 2010-01-01 Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=598]], camposKey:1434-6028 2009-12-01 Front-end process modeling in silicon323359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=604]], camposKey:0021-8979 2009-04-15 Improved atomistic damage generation model for binary collision simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=621]], camposKey:1938-5862 2009-01-01 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization411418, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11426]], camposKey:0163-1918 2009-01-01 Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices10, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2699]], camposKey:0921-5107 2008-12-05 Atomistic modeling of FnVm complexes in pre-amorphized Si207210, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=2698]], camposKey:0921-5107 2008-12-05 Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects247251, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11427]], camposKey:0163-1918 2008-12-01 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9106]], camposKey:0021-8979 2008-05-01 Si interstitial contribution of F(+) implants in crystalline Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=609]], camposKey:0272-9172 2008-01-01 Atomistic Simulation Techniques in Front-End Processing237248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9107]], camposKey:1071-1023 2008-01-01 Evolution of fluorine and boron profiles during annealing in crystalline Si377381, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9109]], camposKey:0272-9172 2008-01-01 F+ Implants in Crystalline Si: The Si Interstitial Contribution2790, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=595]], camposKey:1012-0394 2008-01-01 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation7176, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=606]], camposKey:2469-9950 2008-01-01 Structural transformations from point to extended defects in silicon: A molecular dynamics study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=625]], camposKey:2469-9950 2007-10-01 Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=616]], camposKey:0021-8979 2007-05-01 Atomistic analysis of the annealing behavior of amorphous regions in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=610]], camposKey:0168-583X 2007-02-01 Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models110113, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=602]], camposKey:0168-583X 2007-02-01 Multiscale modeling of radiation damage and annealing in Si95100, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=611]], camposKey:1071-1023 2006-09-01 Atomistic modeling of dopant implantation, diffusion, and activation24322436, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39864]], camposKey:0003-6951 2006-05-08 Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=613]], camposKey:1742-6588 2006-01-01 An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon2840, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9105]], camposKey:0094-243X 2006-01-01 Fluorine profile distortion upon annealing by the presence of a CVD grown boron box290, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6590]], camposKey:0168-583X 2006-01-01 Physical insight into ultra-shallow junction formation through atomistic modeling00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=582]], camposKey:0921-5107 2005-12-05 Amorphous layer depth dependence on implant parameters during Si self-implantation379382, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=622]], camposKey:0921-5107 2005-12-05 Atomistic simulations in Si processing: Bridging the gap between atoms and experiments7280, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=627]], camposKey:0921-5107 2005-12-05 Molecular dynamics characterization of as-implanted damage in silicon372375, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=597]], camposKey:0021-8979 2005-05-15 Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=608]], camposKey:0003-6951 2005-01-17 Role of silicon interstitials in boron cluster dissolution00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=619]], camposKey:0927-0256 2005-01-01 A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework112117, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=617]], camposKey:0927-0256 2005-01-01 Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation92105, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=607]], camposKey:0168-583X 2005-01-01 Atomistic modeling of ion beam induced amorphization in silicon501505, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=594]], camposKey:0921-5107 2004-12-15 Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants8287, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=618]], camposKey:0921-5107 2004-12-15 The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles193197, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=590]], camposKey:0168-583X 2004-02-01 Atomistic modeling of ion beam induced amorphization in silicon4145, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=605]], camposKey:0272-9172 2004-01-01 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution307312, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=614]], camposKey:0272-9172 2004-01-01 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers.431436][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21530]},camposKey: 1 4 ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions 978-1-5386-5779-92018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21531]},camposKey: 1 4 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential 978-1-5386-5779-92018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21554]},camposKey: 1 4 Atomistic process simulation for future generation nanodevices 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21552]},camposKey: 34 39 Modeling of advanced ion implantation technologies in semiconductors 978-1-61284-131-111th International Workshop on Junction Technology (IWJT) 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=99]},camposKey: 176 180 Modeling of defect generation and dissolution in ion implanted semiconductors 978-0-7354-0876-0Ion Implantation Technology 2010: 18th International Conference on Ion Implantation Technology IIT 2010 1 2011-01-01 AIP, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21553]},camposKey: 1 4 Molecular implants and cold implants: Two new strategies for junction formation of future Si devices 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21555]},camposKey: 1 4 Simulation study of ion implanted defects associated to luminescence centers in silicon 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=109]},camposKey: 411 418 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization 978-1-56677-740-7Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009) 1 2009-01-01 IOP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=313]},camposKey: 479 483 Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices 978-1-4244-5639-02009 IEEE International Electron Devices Meeting (IEDM) 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=108]},camposKey: 12 15 Atomistic simulations of the effect of implant parameters on Si damage 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=309]},camposKey: 34 0 Carrier mobility degradation in highly B-doped junctions 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=101]},camposKey: 50 53 Influence of Si surface on damage generation and recombination 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=97]},camposKey: 535 539 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices 978-1-4244-2377-42008 IEEE International Electron Devices Meeting 1 2008-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=103]},camposKey: 237 248 Atomistic Simulation Techniques in Front-End Processing 978-1-60511-040-0Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2097]},camposKey: 279 0 F+ Implants in Crystalline Si: The Si Interstitial Contribution 978-1-60511-040-0Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14683]},camposKey: 71 76 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation 978-3-908451-56-3Theory, Modeling and Numerical Simulation of Multi-Physics Materials Behavior 1 2008-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=102]},camposKey: 21 24 Atomistic simulation of damage accumulation during shallow B and As implant into Si 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=314]},camposKey: 29 32 Boron electrical activation in SOI compared to bulk si substrates 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=98]},camposKey: 17 20 Molecular dynamics modeling of octadecaborane implantation into Si 978-3-211-72860-4Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=105]},camposKey: 37 40 Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2096]},camposKey: 29 32 Fluorine profile distortion upon annealing by the presence of a CVD grown boron box 978-0-7354-0365-9Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 1 2006-01-01 AIP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=106]},camposKey: 431 436 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=308]},camposKey: 151 154 Atomistic modeling of B activation and deactivation for ultra-shallow junction formation 978-0-7803-7826-1International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2003 1 2003-01-01 IEEE][][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63660]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63660]]][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5e78335, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@a2b8ae4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6e757d52, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5b6fccd0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@62a812a3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3402c8b8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7158ac87, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5474e730, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@766bda17, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@548e9b6a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@600629e8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@13b80fbf, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3b2bc4bd, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1bde4d79, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4ac66e83, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@19505593, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7cbb7428, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@15e75b43][][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f5317][][][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=58771]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=58771]]][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@467bf3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f933], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414d41], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f73e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413345], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413670], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41250c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ffc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a]][][][][][][][]

PUBLICACIONES

Artículos de revista (65)

Martin-Encinar L.; Marques L.A.; Santos I.; Lopez P.; Pelaz L. Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study. Advanced Theory and Simulations 2023; 0.

Enlace a la publicaciónTexto completo en acceso abierto
Ver Todos

Capítulos de libros (30)

Pedro López ; M. Aboy ; I. Muñoz ; I. Santos ; L. A. Marqués ; C. Couso ; M. Ullán ; L. Pelaz. ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions. En: 2018 Spanish Conference on Electron Devices (CDE). IEEE; 2018. p. 1-4.

Enlace a la publicaciónTexto completo en acceso abierto

Ver Todos
 

AYUDA A LA INVESTIGACIÓN

Proyectos (11)

MODELADO ATOMÍSTICO DE LA IRRADIACIÓN DE ALTA ENERGÍA EN SEMICONDUCTORES. Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); LOPEZ MARTIN, PEDRO (IP); SANTOS TEJIDO, IVAN; MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA. Equipo de Trabajo: MARTIN ENCINAR, LUIS. PID2020-115118GB-I00. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, 10.13039/501100011033, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/09/2021-31/08/2024

Mnisterio de Ciencia e InnovaciónAEI
Ver Todos

Convenios/Contratos OTC (1)

ASESORAMIENTO PARA EL DESARROLLO DE DISPOSITIVOS TECNOLÓGICOS PARA CONGRESOS, EVENTOS Y MUSEOS. . Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); LOPEZ MARTIN, PEDRO; MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA. Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL.. 01/07/2014

Ver Todos

Otras ayudas y becas (1)

CONTRATO DE GARANTIA JUVENIL JCYL TIPO B (TITULADO) DE FERNANDO MANSO SAN ISIDRO: - El diseño de simulaciones por ordenador para el estudio de materiales y procesos de interés en Nanoelectrónica.- La implementación de nuevos modelos para describir fenómenos físicos y la adaptación de los códigos de simulación existentes. - La ejecución y monitorización de las simulaciones de forma local o en un servidor de cálculo.- El análisis de la información obtenida de las simulaciones, que en la mayoría de los casos implica una cantidad ingente de datos. Para la gestión de esta información masiva se h. LOPEZ MARTIN, PEDRO (Director). MANSO SAN ISIDRO, FERNANDO (Beneficiario). 03/02/2021 - 01/12/2022. 37.000,00 EUR.

JCYL-2FSEIniciativa Empleo Juvenil-FSE
Ver Todos
 

OTROS

Congresos (18)

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca 14/11/2018 - 16/11/2018
(Ponencia). Martin L.; Santos I.; Lopez P.; Marques L.; Aboy M.; Pelaz L. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
Ver Todos

Estancias de investigación (1)

AYUDAS UVA A LA INVESTIGACION: ESTANCIA DE INVESTIGACION. 21/09/2006 - 19/11/2006
     PHILIPS RESEARCH LEUVEN. LEUVEN ( BÉLGICA )


Ver Todos
Cargando información ...
Universidad de Valladolid - Copyright Universidad de Valladolid - Todos los derechos reservados