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MARQUES CUESTA, LUIS ALBERTO

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
lmarques@ele.uva.es
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Índice H en Web of Science: 19
Índice H en Scopus: 18
 
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[com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=32]], com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=33]], com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=34]], com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=31]]][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56852]], camposKey:0022-3093 2019-01-01 Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study2027, 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camposKey:0927-0256 2003-03-01 The role of the bond defect on silicon amorphization: a molecular dynamics study69, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11429]], camposKey:0163-1918 2002-12-01 A physics based approach to ultra-shallow p+-junction formation at the 32 nm node879882, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11430]], camposKey:0272-9172 2001-12-01 Atomistic modeling of amorphization in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=580]], camposKey:0168-583X 2001-06-01 Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si1216, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, 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SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=105]},camposKey: 37 40 Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1958]},camposKey: 435 437 Damage buildup model with dose rate and temperature dependence 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1959]},camposKey: 405 408 Study of the amorphous phase of silicon using molecular dynamics simulation techniques 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=106]},camposKey: 431 436 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=308]},camposKey: 151 154 Atomistic modeling of B activation and deactivation for ultra-shallow junction formation International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1960]},camposKey: 31 40 Modeling of dopant and defect interactions in Si process simulators Defect and Diffusion Forum 1 2003-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=96]},camposKey: 879 882 A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node Electron Devices Meeting 2002 International 1 2002-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=94]},camposKey: 26 29 The role of incomplete interstitial-vacancy recombination on silicon amorphization Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=95]},camposKey: 3 13 Surface effects during ion beam processing of materials Ion-Solid Interactions for Materials Modification and Processing 1 1996-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21570]},camposKey: 363 368 Design of vertical power MOSFETs in SiC 1995 20th International Conference on Microelectronics: Proceedings of International Conference on Microelectronics 1 1995-01-01 IEEE][][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61617]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59807]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59806]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61617]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59807]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59806]]][][][com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145636667]]][][][][][com.sigma.fs3.argos.domain.gpc.GpcWorkingPapers[id=com.sigma.fs3.argos.domain.gpc.GpcWorkingPapersPK[ifcactivitat=WOP, ifccomptador=1]]][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6916044d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@24749121, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@60e42039, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@20ffafe1, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7273edb3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@18fabd79, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@75ad5fbe, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4968ef4d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@836cde2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4606b4a4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@623d9ee6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3b8b406d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3332d2a5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4da368e5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@233bba35, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@263dffa5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@305abd40, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@153ecd8d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4e28eee0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@615adc36, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@142f8f29, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3e5fd719, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@622ca4d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@560f8860, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@15c282c4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@15171d05, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@20723e14, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2c49a3b0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@16998e87, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3b5c4ca8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@28acc80a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@67811d62, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4db04204, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6ebe3c74, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@b731c79, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@325251ce, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3a78c531, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4eda31f4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5705b29d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@37118e0d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@618513b9, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@67d208b3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@e395505, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@55fcc28e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@454924bc, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@450ad62d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4a7347c4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@566cbb0b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7c6bfb80, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@154cd051, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@660080c3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2b05b686, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4122d7b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4567e853, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@28c5c4be, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4ff7aadb, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@cf238e1, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7274426a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2eb477da, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4a28a12a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@316cf26f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@67a06ec2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@55c7b7b4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2aedb66b][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6417cd6a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@56af1d7c][][com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=450]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=451]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=449]]][com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=450]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=451]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=449]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59897]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59899]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59898]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59897]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59899]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59898]]][com.sigma.fs3.argos.domain.gpc.GpcExpGestionId[id=com.sigma.fs3.argos.domain.gpc.GpcExpGestionIdPK[ifcactivitat=EXP, ifccomptador=175]]][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f933], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414d41], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f73e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413345], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413670], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ffc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41250c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4604c5], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411e1e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f3ad], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411cf2], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f436], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f464], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f346]][com.sigma.fs3.argos.domain.gpc.altres.NumTramsRecerca@12f75][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15502, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15047, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@14b69][]

AYUDA A LA INVESTIGACIÓN

PUBLICACIONES

Artículos de revista (84)

Santos I.; Aboy M.; Marques L.A.; Lopez P.; Pelaz L. Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study . JOURNAL OF NON-CRYSTALLINE SOLIDS 2019; 503-504(0): 2-27.
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Capítulos de libros (34)

Pedro López ; M. Aboy ; I. Muñoz ; I. Santos ; L. A. Marqués ; C. Couso ; M. Ullán ; L. Pelaz. ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions. En: 2018 Spanish Conference on Electron Devices (CDE). IEEE; 2018. p. 1-4.
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Working papers (1)

L.A. Marqués; . . CINECA Consorzio Interuniversitario; 2008.
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AYUDA A LA INVESTIGACIÓN

Proyectos (18)

ESTUDIO DE PROCESOS TECNOLÓGICOS AVANZADOS PARA LA FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS NANOMÉTRICOS MEDIANTE TÉCNICAS DE SIMULACIÓN PREDICTIVA. MARQUES CUESTA, LUIS ALBERTO (IP); SANTOS TEJIDO, IVAN; HERNANDEZ MANGAS, JESUS MANUEL; ARIAS ALVAREZ, JESUS; RUBIO GARCIA, JOSE EMILIANO; VICENTE ANTON, JOSE; RUIZ PRIETO, MANUEL; ENRIQUEZ GIRAUDO, MARIA LOURDES; PELAZ MONTES, MARIA LOURDES; ABOY CEBRIAN, MARIA; LOPEZ MARTIN, PEDRO; PINACHO GOMEZ, RUTH. VA119G18. UNIVERSIDAD DE VALLADOLID, JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2018-2020
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Otras ayudas y becas (3)

CONTRATO PREDOCTORAL UVa DE LUIS MARTÍN ENCINAR: MODELADO PREDICTIVO DE LA FORMACIÓN DE HETEROESTRUCTURAS CON INTERÉS EN NANO-ELECTRÓNICA. MARQUES CUESTA, LUIS ALBERTO (Director). MARTIN ENCINAR, LUIS (Beneficiario). 01/09/2020 - 31/08/2024. 71.134,18 EUR.
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OTROS

Tesis doctorales (1)

SANTOS TEJIDO, IVAN MULTISCALE MODELING OF DOPANT IMPLANTATION AND DIFFUSION IN CRYSTALLINE AND AMORPHOUS SILICON. Universidad de Valladolid; 2010.
 
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Congresos (64)

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca 14/11/2018 - 16/11/2018
(Ponencia). Martin L.; Santos I.; Lopez P.; Marques L.; Aboy M.; Pelaz L. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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Organización de actos (2)

9ª Conferencia de Dispositivos Electronicos, Valladolid ( ESPAÑA ) 12/02/2013 - 14/02/2013
Otros.
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Estancias de investigación (3)

Paralelización de un código de dinámica molecular clásica para semiconductores. 01/10/2007 - 21/12/2007
     UNIVERSIDAD DE EDIMBURGO. Edimburgo ( GRAN BRETAÑA )
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Cursos y seminarios impartidos (3)

Ion Implantation Science and Technology School: Modeling Ion Implantation and Annealing in Silicon. PORTLAND 28/06/2014 - 28/06/2014
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Experiencia en gestión de I+D (1)

Grupo de Investigación Reconocido de Electrónica, Otros, 01/01/2010
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Otras actividades (4)

Premio Extraordinario de Licenciatura. Universidad de Valladolid curso 92-93. .
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