Inicio > MARQUES CUESTA, LUIS ALBERTO

MARQUES CUESTA, LUIS ALBERTO

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
lmarques@uva.es

Índice H en Web of Science: 19
Índice H en Scopus: 19
 

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com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56850]], camposKey:0168-583X 2019-01-01 On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon179183, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56851]], camposKey:1359-6454 2019-01-01 {001} loops in silicon unraveled192201, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56854]], camposKey:0361-5235 2018-01-01 Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation49554958, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56853]], camposKey:0361-5235 2018-01-01 W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations50455049, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=620]], camposKey:2163-4971 2017-01-01 Characterization of amorphous Si generated through classical molecular dynamics simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=630]], camposKey:2163-4971 2017-01-01 Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=600]], camposKey:1369-8001 2017-01-01 Improved physical models for advanced silicon device processing6279, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6420]], camposKey:0031-9007 2017-01-01 Ultrafast Generation of Unconventional {001 } Loops in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=631]], camposKey:1946-1569 2016-01-01 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion3537, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=596]], camposKey:0022-3727 2016-01-01 Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=599]], camposKey:1369-8001 2016-01-01 Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon235238, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6589]], camposKey:0168-583X 2015-01-01 A detailed approach for the classification and statistical analysis of irradiation induced defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=628]], camposKey:0168-583X 2015-01-01 Atomistic modeling of ion implantation technologies in silicon148151, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=567]], camposKey:0021-8979 2014-01-01 Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=612]], camposKey:1569-8025 2014-01-01 Modeling of defects, dopant diffusion and clustering in silicon4058, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=563]], camposKey:0031-9007 2013-01-01 Sub-angstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=593]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulation of the regrowth of nanometric multigate Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=623]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulations of damage production by thermal spikes in Ge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=592]], camposKey:0094-243X 2012-01-01 Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study229232, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=624]], camposKey:2469-9950 2011-01-01 Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=578]], camposKey:0003-6951 2011-01-01 The curious case of thin-body Ge crystallization00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=603]], camposKey:0094-243X 2010-01-01 Modeling of defect generation and dissolution in ion implanted semiconductors176180, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=629]], camposKey:2469-9950 2010-01-01 Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=601]], camposKey:1071-1023 2010-01-01 Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=598]], camposKey:1434-6028 2009-12-01 Front-end process modeling in silicon323359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=604]], camposKey:0021-8979 2009-04-15 Improved atomistic damage generation model for binary collision simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=621]], camposKey:1938-5862 2009-01-01 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization411418, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11426]], camposKey:0163-1918 2009-01-01 Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices10, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11427]], camposKey:0163-1918 2008-12-01 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=609]], camposKey:0272-9172 2008-01-01 Atomistic Simulation Techniques in Front-End Processing237248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=615]], camposKey:0272-9172 2008-01-01 First Principles Study of Boron in Amorphous Silicon2230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=595]], camposKey:1012-0394 2008-01-01 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation7176, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=606]], camposKey:2469-9950 2008-01-01 Structural transformations from point to extended defects in silicon: A molecular dynamics study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=625]], camposKey:2469-9950 2007-10-01 Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=616]], camposKey:0021-8979 2007-05-01 Atomistic analysis of the annealing behavior of amorphous regions in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=610]], camposKey:0168-583X 2007-02-01 Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models110113, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=575]], camposKey:0168-583X 2007-02-01 Molecular dynamics study of B18H22 cluster implantation into silicon242246, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=602]], camposKey:0168-583X 2007-02-01 Multiscale modeling of radiation damage and annealing in Si95100, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=574]], camposKey:1098-0121 2006-11-01 Characterization of octadecaborane implantation into Si using molecular dynamics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=581]], camposKey:1098-0121 2006-11-01 Modeling of damage generation mechanisms in silicon at energies below the displacement threshold00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=611]], camposKey:1071-1023 2006-09-01 Atomistic modeling of dopant implantation, diffusion, and activation24322436, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39864]], camposKey:0003-6951 2006-05-08 Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=613]], camposKey:1742-6588 2006-01-01 An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon2840, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6590]], camposKey:0168-583X 2006-01-01 Physical insight into ultra-shallow junction formation through atomistic modeling00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=582]], camposKey:0921-5107 2005-12-05 Amorphous layer depth dependence on implant parameters during Si self-implantation379382, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=622]], camposKey:0921-5107 2005-12-05 Atomistic simulations in Si processing: Bridging the gap between atoms and experiments7280, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=627]], camposKey:0921-5107 2005-12-05 Molecular dynamics characterization of as-implanted damage in silicon372375, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=597]], camposKey:0021-8979 2005-05-15 Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=576]], camposKey:1098-0121 2005-02-01 Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=608]], camposKey:0003-6951 2005-01-17 Role of silicon interstitials in boron cluster dissolution00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=619]], camposKey:0927-0256 2005-01-01 A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework112117, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=617]], camposKey:0927-0256 2005-01-01 Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation92105, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=607]], camposKey:0168-583X 2005-01-01 Atomistic modeling of ion beam induced amorphization in silicon501505, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=562]], camposKey:0168-583X 2005-01-01 Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon235239, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=594]], camposKey:0921-5107 2004-12-15 Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants8287, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=618]], camposKey:0921-5107 2004-12-15 The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles193197, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=573]], camposKey:0021-8979 2004-12-01 Ion-beam-induced amorphization and recrystallization in silicon59475976, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=583]], camposKey:0168-583X 2004-02-01 Atomistic analysis of the ion beam induced defect evolution100104, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=590]], camposKey:0168-583X 2004-02-01 Atomistic modeling of ion beam induced amorphization in silicon4145, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=588]], camposKey:0168-583X 2004-02-01 The laser annealing induced phase transition in silicon: a molecular dynamics study5761, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=605]], camposKey:0272-9172 2004-01-01 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution307312, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=614]], camposKey:0272-9172 2004-01-01 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers.431436, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3270]], camposKey:1012-0386 2003-12-01 Modeling of dopant and defect interactions in Si process simulators3140, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=584]], camposKey:0003-6951 2003-11-17 Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles41664168, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=586]], camposKey:0031-9007 2003-09-26 Microscopic description of the irradiation-induced amorphization in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=589]], camposKey:0021-8979 2003-07-15 Atomistic analysis of defect evolution and transient enhanced diffusion in silicon10131018, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=579]], camposKey:0003-6951 2003-03-31 Atomistic modeling of amorphization and recrystallization in silicon20382040, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=585]], camposKey:0927-0256 2003-03-01 Monte Carlo modeling of amorphization resulting from ion implantation in Si15, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=577]], camposKey:0927-0256 2003-03-01 The role of the bond defect on silicon amorphization: a molecular dynamics study69, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11429]], camposKey:0163-1918 2002-12-01 A physics based approach to ultra-shallow p+-junction formation at the 32 nm node879882, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11430]], camposKey:0272-9172 2001-12-01 Atomistic modeling of amorphization in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=580]], camposKey:0168-583X 2001-06-01 Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si1216, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57014]], camposKey:2469-9950 2001-01-01 Stability of defects in crystalline silicon and their role in amorphization19, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=572]], camposKey:0267-0836 1997-11-01 Molecular dynamics simulations of ion bombardment processes893896, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=571]], camposKey:0021-8979 1997-02-01 Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation14881494, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=566]], camposKey:0021-8979 1996-12-01 Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study61606169, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11432]], camposKey:1098-0121 1996-01-01 Ion-beam processing of silicon at keV energies: A molecular-dynamics study1668316695, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11431]], camposKey:0272-9172 1996-01-01 Molecular dynamics studies of the ion beam induced crystallization in silicon201206, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=591]], camposKey:0168-583X 1996-01-01 Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions156159, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=569]], camposKey:0272-9172 1996-01-01 Surface effects during ion beam processing of materials313, 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Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21531]},camposKey: 1 4 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential 978-1-5386-5779-92018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21554]},camposKey: 1 4 Atomistic process simulation for future generation nanodevices 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21552]},camposKey: 34 39 Modeling of advanced ion implantation technologies in semiconductors 978-1-61284-131-111th International Workshop on Junction Technology (IWJT) 1 2011-01-01 IEEE, 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SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=105]},camposKey: 37 40 Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1958]},camposKey: 435 437 Damage buildup model with dose rate and temperature dependence 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1959]},camposKey: 405 408 Study of the amorphous phase of silicon using molecular dynamics simulation techniques 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. 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SISPAD 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1960]},camposKey: 31 40 Modeling of dopant and defect interactions in Si process simulators 978-3-908450-83-2Defect and Diffusion Forum 1 2003-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=96]},camposKey: 879 882 A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node 978-0-7803-7462-1Electron Devices Meeting 2002 International 1 2002-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=94]},camposKey: 26 29 The role of incomplete interstitial-vacancy recombination on silicon amorphization 978-3-7091-7278-0 Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=95]},camposKey: 3 13 Surface effects during ion beam processing of materials 978-1-55899-299-3Ion-Solid Interactions for Materials Modification and Processing 1 1996-01-01 MRS. 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PUBLICACIONES

Artículos de revista (84)

Santos I.; Aboy M.; Marques L.A.; Lopez P.; Pelaz L. Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study . Journal of Non-Crystalline Solids 2019; 503-504: 20-27.

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Capítulos de libros (34)

Pedro López ; M. Aboy ; I. Muñoz ; I. Santos ; L. A. Marqués ; C. Couso ; M. Ullán ; L. Pelaz. ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions. En: 2018 Spanish Conference on Electron Devices (CDE). IEEE; 2018. p. 1-4.

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Working papers y preprints (1)

L.A. Marqués; . Parallelization of a classical molecular dynamics code for semiconductors. CINECA Consorzio Interuniversitario; 2008.

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AYUDA A LA INVESTIGACIÓN

Proyectos (19)

MODELADO ATOMÍSTICO DE LA IRRADIACIÓN DE ALTA ENERGÍA EN SEMICONDUCTORES. Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); LOPEZ MARTIN, PEDRO (IP); SANTOS TEJIDO, IVAN; MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA. Equipo de Trabajo: MARTIN ENCINAR, LUIS. PID2020-115118GB-I00. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, 10.13039/501100011033. 01/09/2021-31/08/2024

AEI
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Convenios (1)

ASESORAMIENTO PARA EL DESARROLLO DE DISPOSITIVOS TECNOLÓGICOS PARA CONGRESOS, EVENTOS Y MUSEOS. . Equipo Investigadores: PELAZ MONTES, MARIA LOURDES (IP); MARQUES CUESTA, LUIS ALBERTO; ABOY CEBRIAN, MARIA; LOPEZ MARTIN, PEDRO. Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: EVENTO ORGANIZAC. DE SERVICIOS PLENOS,SL.. 2014-07-01

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Otras ayudas y becas (3)

CONTRATO PREDOCTORAL UVA DE LUIS MARTÍN ENCINAR: MODELADO PREDICTIVO DE LA FORMACIÓN DE HETEROESTRUCTURAS CON INTERÉS EN NANO-ELECTRÓNICA. MARQUES CUESTA, LUIS ALBERTO (Director). MARTIN ENCINAR, LUIS (Beneficiario). 01/09/2020 - 31/08/2024. 71.134,18 EUR.

Banco SantanderUniversidad de Valladolid
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OTROS

Tesis doctorales (1)


 
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Congresos (119)

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca 14/11/2018 - 16/11/2018
(Ponencia). Martin L.; Santos I.; Lopez P.; Marques L.; Aboy M.; Pelaz L. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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Organización de actos (2)

9ª Conferencia de Dispositivos Electronicos, Valladolid ( ESPAÑA ) 12/02/2013 - 14/02/2013
Otros.
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Estancias de investigación (3)

Paralelización de un código de dinámica molecular clásica para semiconductores. 01/10/2007 - 21/12/2007
     UNIVERSIDAD DE EDIMBURGO. Edimburgo ( GRAN BRETAÑA )


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Cursos y seminarios impartidos (3)

Ion Implantation Science and Technology School: Modeling Ion Implantation and Annealing in Silicon. PORTLAND 28/06/2014 - 28/06/2014
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Experiencia en gestión de I+D (1)

Grupo de Investigación Reconocido de Electrónica, Otros, 01/01/2010
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Otras actividades (4)

Premio Extraordinario de Licenciatura. Universidad de Valladolid curso 92-93. .
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