[com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=32]], com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=33]], com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=34]], com.sigma.fs3.argos.domain.gpc.AltresActivPers[id=com.sigma.fs3.argos.domain.gpc.GpcAltresActivPersPK[ifcactivitat=AAP, ifccomptador=31]]][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75920]], camposKey:2513-0390 2023-01-01 Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75099]], camposKey:1359-6454 2022-12-01 Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65531]], camposKey:0168-583X 2022-01-01 Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons4248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65530]], camposKey:0168-583X 2022-01-01 Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism5459, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56852]], camposKey:0022-3093 2019-01-01 Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study2027, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56850]], camposKey:0168-583X 2019-01-01 On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon179183, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56851]], camposKey:1359-6454 2019-01-01 {001} loops in silicon unraveled192201, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56854]], camposKey:0361-5235 2018-01-01 Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation49554958, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56853]], camposKey:0361-5235 2018-01-01 W and X Photoluminescence Centers in Crystalline Si: Chasing Candidates at Atomic Level Through Multiscale Simulations50455049, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=620]], camposKey:2163-4971 2017-01-01 Characterization of amorphous Si generated through classical molecular dynamics simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=630]], camposKey:2163-4971 2017-01-01 Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=600]], camposKey:1369-8001 2017-01-01 Improved physical models for advanced silicon device processing6279, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6420]], camposKey:0031-9007 2017-01-01 Ultrafast Generation of Unconventional {001 } Loops in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=631]], camposKey:1946-1569 2016-01-01 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion3537, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=596]], camposKey:0022-3727 2016-01-01 Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=599]], camposKey:1369-8001 2016-01-01 Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon235238, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6589]], camposKey:0168-583X 2015-01-01 A detailed approach for the classification and statistical analysis of irradiation induced defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=628]], camposKey:0168-583X 2015-01-01 Atomistic modeling of ion implantation technologies in silicon148151, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=567]], camposKey:0021-8979 2014-01-01 Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=612]], camposKey:1569-8025 2014-01-01 Modeling of defects, dopant diffusion and clustering in silicon4058, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=563]], camposKey:0031-9007 2013-01-01 Sub-angstrom Experimental Validation of Molecular Dynamics for Predictive Modeling of Extended Defect Structures in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=593]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulation of the regrowth of nanometric multigate Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=623]], camposKey:0021-8979 2012-01-01 Molecular dynamics simulations of damage production by thermal spikes in Ge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=592]], camposKey:0094-243X 2012-01-01 Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study229232, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=624]], camposKey:2469-9950 2011-01-01 Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=578]], camposKey:0003-6951 2011-01-01 The curious case of thin-body Ge crystallization00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=603]], camposKey:0094-243X 2010-01-01 Modeling of defect generation and dissolution in ion implanted semiconductors176180, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=629]], camposKey:2469-9950 2010-01-01 Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=601]], camposKey:1071-1023 2010-01-01 Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=598]], camposKey:1434-6028 2009-12-01 Front-end process modeling in silicon323359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=604]], camposKey:0021-8979 2009-04-15 Improved atomistic damage generation model for binary collision simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=621]], camposKey:1938-5862 2009-01-01 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization411418, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11426]], camposKey:0163-1918 2009-01-01 Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices10, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11427]], camposKey:0163-1918 2008-12-01 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=609]], camposKey:0272-9172 2008-01-01 Atomistic Simulation Techniques in Front-End Processing237248, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=615]], camposKey:0272-9172 2008-01-01 First Principles Study of Boron in Amorphous Silicon2230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=595]], camposKey:1012-0394 2008-01-01 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation7176, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=606]], camposKey:2469-9950 2008-01-01 Structural transformations from point to extended defects in silicon: A molecular dynamics study00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=625]], camposKey:2469-9950 2007-10-01 Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=616]], camposKey:0021-8979 2007-05-01 Atomistic analysis of the annealing behavior of amorphous regions in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=610]], camposKey:0168-583X 2007-02-01 Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models110113, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=575]], camposKey:0168-583X 2007-02-01 Molecular dynamics study of B18H22 cluster implantation into silicon242246, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=602]], camposKey:0168-583X 2007-02-01 Multiscale modeling of radiation damage and annealing in Si95100, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=574]], camposKey:1098-0121 2006-11-01 Characterization of octadecaborane implantation into Si using molecular dynamics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=581]], camposKey:1098-0121 2006-11-01 Modeling of damage generation mechanisms in silicon at energies below the displacement threshold00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=611]], camposKey:1071-1023 2006-09-01 Atomistic modeling of dopant implantation, diffusion, and activation24322436, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39864]], camposKey:0003-6951 2006-05-08 Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=613]], camposKey:1742-6588 2006-01-01 An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon2840, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6590]], camposKey:0168-583X 2006-01-01 Physical insight into ultra-shallow junction formation through atomistic modeling00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=582]], camposKey:0921-5107 2005-12-05 Amorphous layer depth dependence on implant parameters during Si self-implantation379382, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=622]], camposKey:0921-5107 2005-12-05 Atomistic simulations in Si processing: Bridging the gap between atoms and experiments7280, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=627]], camposKey:0921-5107 2005-12-05 Molecular dynamics characterization of as-implanted damage in silicon372375, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=597]], camposKey:0021-8979 2005-05-15 Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=576]], camposKey:1098-0121 2005-02-01 Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=608]], camposKey:0003-6951 2005-01-17 Role of silicon interstitials in boron cluster dissolution00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=619]], camposKey:0927-0256 2005-01-01 A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework112117, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=617]], camposKey:0927-0256 2005-01-01 Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation92105, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=607]], camposKey:0168-583X 2005-01-01 Atomistic modeling of ion beam induced amorphization in silicon501505, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=562]], camposKey:0168-583X 2005-01-01 Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon235239, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=594]], camposKey:0921-5107 2004-12-15 Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants8287, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=618]], camposKey:0921-5107 2004-12-15 The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles193197, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=573]], camposKey:0021-8979 2004-12-01 Ion-beam-induced amorphization and recrystallization in silicon59475976, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=583]], camposKey:0168-583X 2004-02-01 Atomistic analysis of the ion beam induced defect evolution100104, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=590]], camposKey:0168-583X 2004-02-01 Atomistic modeling of ion beam induced amorphization in silicon4145, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=588]], camposKey:0168-583X 2004-02-01 The laser annealing induced phase transition in silicon: a molecular dynamics study5761, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=605]], camposKey:0272-9172 2004-01-01 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution307312, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=614]], camposKey:0272-9172 2004-01-01 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers.431436, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3270]], camposKey:1012-0386 2003-12-01 Modeling of dopant and defect interactions in Si process simulators3140, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=584]], camposKey:0003-6951 2003-11-17 Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles41664168, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=586]], camposKey:0031-9007 2003-09-26 Microscopic description of the irradiation-induced amorphization in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=589]], camposKey:0021-8979 2003-07-15 Atomistic analysis of defect evolution and transient enhanced diffusion in silicon10131018, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=579]], camposKey:0003-6951 2003-03-31 Atomistic modeling of amorphization and recrystallization in silicon20382040, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=585]], camposKey:0927-0256 2003-03-01 Monte Carlo modeling of amorphization resulting from ion implantation in Si15, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=577]], camposKey:0927-0256 2003-03-01 The role of the bond defect on silicon amorphization: a molecular dynamics study69, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11429]], camposKey:0163-1918 2002-12-01 A physics based approach to ultra-shallow p+-junction formation at the 32 nm node879882, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11430]], camposKey:0272-9172 2001-12-01 Atomistic modeling of amorphization in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=580]], camposKey:0168-583X 2001-06-01 Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si1216, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57014]], camposKey:2469-9950 2001-01-01 Stability of defects in crystalline silicon and their role in amorphization19, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=572]], camposKey:0267-0836 1997-11-01 Molecular dynamics simulations of ion bombardment processes893896, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=571]], camposKey:0021-8979 1997-02-01 Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation14881494, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=566]], camposKey:0021-8979 1996-12-01 Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study61606169, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11432]], camposKey:1098-0121 1996-01-01 Ion-beam processing of silicon at keV energies: A molecular-dynamics study1668316695, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11431]], camposKey:0272-9172 1996-01-01 Molecular dynamics studies of the ion beam induced crystallization in silicon201206, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=591]], camposKey:0168-583X 1996-01-01 Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions156159, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=569]], camposKey:0272-9172 1996-01-01 Surface effects during ion beam processing of materials313, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=587]], camposKey:0267-0836 1995-11-01 Detailed computer simulation of ion implantation processes into crystals11911193, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=568]], camposKey:0168-583X 1995-01-01 An improved molecular dynamics scheme for ion bombardment simulations711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=570]], camposKey:0168-583X 1995-01-01 Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions301304][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21530]},camposKey: 1 4 ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions 978-1-5386-5779-92018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21531]},camposKey: 1 4 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential 978-1-5386-5779-92018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21554]},camposKey: 1 4 Atomistic process simulation for future generation nanodevices 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21552]},camposKey: 34 39 Modeling of advanced ion implantation technologies in semiconductors 978-1-61284-131-111th International Workshop on Junction Technology (IWJT) 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=99]},camposKey: 176 180 Modeling of defect generation and dissolution in ion implanted semiconductors 978-0-7354-0876-0Ion Implantation Technology 2010: 18th International Conference on Ion Implantation Technology IIT 2010 1 2011-01-01 AIP, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21553]},camposKey: 1 4 Molecular implants and cold implants: Two new strategies for junction formation of future Si devices 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21555]},camposKey: 1 4 Simulation study of ion implanted defects associated to luminescence centers in silicon 978-1-4244-7863-7Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=109]},camposKey: 411 418 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization 978-1-56677-740-7Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009) 1 2009-01-01 IOP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=313]},camposKey: 479 483 Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices 978-1-4244-5639-02009 IEEE International Electron Devices Meeting (IEDM) 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=108]},camposKey: 12 15 Atomistic simulations of the effect of implant parameters on Si damage 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=101]},camposKey: 50 53 Influence of Si surface on damage generation and recombination 978-1-4244-2838-02009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=97]},camposKey: 535 539 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices 978-1-4244-2377-42008 IEEE International Electron Devices Meeting 1 2008-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=103]},camposKey: 237 248 Atomistic Simulation Techniques in Front-End Processing 978-1-60511-040-0Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=107]},camposKey: 223 223 First Principles Study of Boron in Amorphous Silicon 978-1-60511-040-0Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14683]},camposKey: 71 76 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation 978-3-908451-56-3Theory, Modeling and Numerical Simulation of Multi-Physics Materials Behavior 1 2008-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=102]},camposKey: 21 24 Atomistic simulation of damage accumulation during shallow B and As implant into Si 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=98]},camposKey: 17 20 Molecular dynamics modeling of octadecaborane implantation into Si 978-3-211-72860-4Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=105]},camposKey: 37 40 Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 978-1-4244-0868-92007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1958]},camposKey: 435 437 Damage buildup model with dose rate and temperature dependence 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1959]},camposKey: 405 408 Study of the amorphous phase of silicon using molecular dynamics simulation techniques 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=106]},camposKey: 431 436 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers 978-1-55899-760-8Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=308]},camposKey: 151 154 Atomistic modeling of B activation and deactivation for ultra-shallow junction formation 978-0-7803-7826-1International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2003 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1960]},camposKey: 31 40 Modeling of dopant and defect interactions in Si process simulators 978-3-908450-83-2Defect and Diffusion Forum 1 2003-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=96]},camposKey: 879 882 A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node 978-0-7803-7462-1Electron Devices Meeting 2002 International 1 2002-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=94]},camposKey: 26 29 The role of incomplete interstitial-vacancy recombination on silicon amorphization 978-3-7091-7278-0 Simulation of Semiconductor Processes and Devices 2001: SISPAD 01 1 2001-01-01 Springer-Verlag Wien, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=95]},camposKey: 3 13 Surface effects during ion beam processing of materials 978-1-55899-299-3Ion-Solid Interactions for Materials Modification and Processing 1 1996-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21570]},camposKey: 363 368 Design of vertical power MOSFETs in SiC 978-0-7803-2786-31995 20th International Conference on Microelectronics: Proceedings of International Conference on Microelectronics 1 1995-01-01 IEEE][][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62218]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59807]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59806]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62218]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59807]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=59806]]][][][com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145636667]]][][][][][com.sigma.fs3.argos.domain.gpc.GpcWorkingPapers[id=com.sigma.fs3.argos.domain.gpc.GpcWorkingPapersPK[ifcactivitat=WOP, ifccomptador=1]]][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@40271736, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1fa0fdce, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@61160c73, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4ff93d61, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@379f1d0f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2f49d8bf, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7e6d2cb1, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@78791428, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@37c1194d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@56acb32a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@413305ea, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@71db81b0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4eeff5b7, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7d692aa3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@24ac7cb1, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@9d7af95, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@38a4b155, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@c2ca8d0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4b221410, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7fbdb1e6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@620e895d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@b0dd7e4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@50d4d001, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4274797c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@54a6540e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@31f10b89, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@47d3816e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@268daf71, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@406d998a, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@79797f4d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@227a49fd, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@69479ce4, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@45cae98f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@777b656c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7beefdf, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@52cbf370, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@40dffe37, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6ca3a345, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1c937919, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@114e4988, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2edf23d0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5f1704c5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@584bf58f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3b2ae507, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6cbc9011, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@bea906f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@c8aeb10, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6064355b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@68500d5e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@37e691d3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6c6f2e54, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2d60006f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4532d260, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4659ab1c, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5351200d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7e9f2170, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2d6d5d11, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@266712eb, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7c6c0f62, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7b7f353e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3cbd7a95, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2253d7a3, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3e58cb94, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3c8ccfa4][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@57c5c9, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@535df016][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@5f93cd][com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=450]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=451]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=449]]][com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=450]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=451]], com.sigma.fs3.argos.domain.gpc.GpcCursosSeminaris[id=com.sigma.fs3.argos.domain.gpc.GpcCursosSeminarisPK[ifcactivitat=CUR, ifccomptador=449]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59897]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59899]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59898]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59897]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59899]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=59898]]][com.sigma.fs3.argos.domain.gpc.GpcExpGestionId[id=com.sigma.fs3.argos.domain.gpc.GpcExpGestionIdPK[ifcactivitat=EXP, ifccomptador=175]]][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@467bf3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f933], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414d41], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f73e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413345], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413670], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ffc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41250c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4604c5], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411e1e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f3ad], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411cf2], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f436], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f464], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f346]][][][][][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@159e4, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15502, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15047, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@14b69][]
