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camposKey:2079-9292 2021-01-01 Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices28160, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=67165]], camposKey:1932-6203 2021-01-01 Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures02570470, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65135]], camposKey:2162-8769 2021-01-01 Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65137]], camposKey:1938-6737 2021-01-01 Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications2935, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65136]], camposKey:1938-6737 2021-01-01 Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications4559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52711]], camposKey:0021-8979 2018-01-01 Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39917]], camposKey:1063-6897 2014-01-01 OmniOrder: Directory-Based Conflict Serialization of Transactions421432, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39916]], camposKey:1063-6897 2014-01-01 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Ossorio G.; Vinuesa G.; Garcia H.; Sahelices B.; Dueñas S.; Castan H.; Ritala M.; Leskela¿ M.; Kemell M.; Kukli K. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications . Solid-State Electronics 2021; 186.

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Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.;Campabadal F.; Garcia H. (2021). Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes. En -. 13th Spanish Conference on Electron Devices, CDE 2021. 1 ed. IEEE; 2021. p. 74-77.
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FABRICACIÓN, CARACTERIZACIÓN, SIMULACIÓN, MODELADO Y APLICACIONES DE DISPOSITIVOS DE CONMUTACIÓN RESISTIVA.. Equipo Investigadores: CASTAN LANASPA, MARIA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP); GARCIA GARCIA, HECTOR; SAHELICES FERNANDEZ, BENJAMIN. Equipo de Trabajo: GONZALEZ OSSORIO, OSCAR; KUKLI ,, KAUPO; AARIK ,, JAAN; TAMM ,, AILE. Personal Contratado: VINUESA SANZ, GUILLERMO. TEC2017-84321-C4-2-R. Entidades colaboradoras AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS (CSIC), UNIVERSIDAD AUTONOMA DE BARCELONA , UNIVERSIDAD DE GRANADA. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: FONDOS FEDER, MINISTERIO DE ECONOMIA Y COMPETITIVIDAD . 01/01/2018-30/09/2021

FEDERMinisterio de Economía y Competitividad
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El Sector del Comercio en Castilla y León.. Equipo Investigadores: SALVADOR INSUA, JOSE ANTONIO (IP); GONZALEZ OSSORIO, OSCAR; BEDATE CENTENO, ANA MARIA; INGELMO PALOMARES, MARTA MARIA; DUEÑAS CARAZO, SALVADOR; TEMPRANO GARCIA, VICTOR; SAHELICES FERNANDEZ, BENJAMIN; S PHABMIXAY S PHABMIXAY, CHANTHALY. Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. 2022-06-13

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Congresos (29)

Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, Sevilla 09/06/2021 - 11/06/2021
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
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