Inicio > RUBIO GARCIA, JOSE EMILIANO

RUBIO GARCIA, JOSE EMILIANO

PROFESORES TITULARES DE UNIVERSIDAD
Electricidad y Electrónica
Electronica
 
emirub@uva.es

Índice H en Scopus: 14
 

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Experimental and DFT Study54805495, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7184]], camposKey:0022-3263 2017-04-07 A DFT-Based Computational-Experimental Methodology for Synthetic Chemistry: Example of Application to the Catalytic Opening of Epoxides by Titanocene37603766, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7220]], camposKey:1463-9076 2017-01-01 Rotational spectra of tetracyclic quinolizidine alkaloids: does a water molecule flip sparteine?1755317559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7779]], camposKey:0021-8979 2011-05-15 Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7786]], camposKey:0040-6090 2010-02-26 Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures24482453, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7767]], camposKey:0921-5107 2008-12-05 The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy260263, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7771]], camposKey:0021-8979 2008-01-01 Comprehensive model of damage accumulation in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50503]], camposKey:0163-1918 2007-12-01 Current capabilities and future prospects of atomistic process simulation951954, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7760]], camposKey:1930-8876 2007-01-01 Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D3380, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7783]], camposKey:0168-583X 2006-12-01 Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo6367, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7788]], camposKey:0272-9172 2006-01-01 Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk99104, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7790]], camposKey:0921-5107 2005-12-05 Bimodal distribution of damage morphology generated by ion implantation389391, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7791]], camposKey:0921-5107 2005-12-05 Comprehensive modeling of ion-implant amorphization in silicon383385, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7773]], camposKey:0921-5107 2005-12-05 Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations392396, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39684]], camposKey:0921-5107 2005-12-05 Ion-implant simulations: The effect of defect spatial correlation on damage accumulation386388, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7772]], camposKey:0921-5107 2005-12-05 Physically based modeling of dislocation loops in ion implantation processing in silicon404408, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7774]], camposKey:0021-8979 2005-09-01 Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7789]], camposKey:0021-8979 2005-08-15 Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7781]], camposKey:1098-0121 2005-07-01 Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7780]], camposKey:0003-6951 2005-06-20 Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7787]], camposKey:0921-5107 2004-12-15 A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations345348, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7782]], camposKey:0921-5107 2004-12-15 Comprehensive, physically based modelling of As in Si135140, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39685]], camposKey:0921-5107 2004-12-15 Physical modeling of Fermi-level effects for decanano device process simulations284289, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7776]], camposKey:0921-5107 2004-12-15 Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation151155, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7785]], camposKey:0003-6951 2004-06-14 Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features49624964, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7765]], camposKey:0021-8979 2003-07-01 Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films163168, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7770]], camposKey:1369-8001 2000-03-01 Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data5963, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7762]], camposKey:0272-9172 1998-01-01 Atomistic modeling of point and extended defects in crystalline materials4353, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7740]], camposKey:0272-9172 1998-01-01 Monte Carlo atomistic simulation of polycrystalline aluminum deposition127132, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=572]], camposKey:0267-0836 1997-11-01 Molecular dynamics simulations of ion bombardment processes893896, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=571]], camposKey:0021-8979 1997-02-01 Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation14881494, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=591]], camposKey:0168-583X 1996-01-01 Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions156159, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=587]], camposKey:0267-0836 1995-11-01 Detailed computer simulation of ion implantation processes into crystals11911193, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=568]], camposKey:0168-583X 1995-01-01 An improved molecular dynamics scheme for ion bombardment simulations711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=570]], camposKey:0168-583X 1995-01-01 Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions301304, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7758]], camposKey:0168-583X 1993-01-01 Computer simulation of point-defect distributions generated by ion implantation172175, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50502]], camposKey:0013-4651 1993-01-01 In-Diffusion and Annealing Kinetics of Palladium in Silicon868870, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7763]], camposKey:0021-8979 1991-01-01 Optical capture cross sections of palladium in silicon298301, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6950]], camposKey:0038-1101 1989-01-01 Constant-capacitance deep-level optical spectroscopy287293, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1933]},camposKey: 9 12 Atomistic modeling of defect diffusion in SiGe 978-3-211-72860-4Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1934]},camposKey: 99 0 Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk 978-1-55899-868-1Doping engineering for device fabrication 1 2006-01-01 Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1932]},camposKey: 951 954 Current capabilities and future prospects of atomistic process simulation 978-1-4244-1507-62007 IEEE International Electron Devices Meeting 1 2003-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1929]},camposKey: 43 53 Atomistic modeling of point and extended defects in crystalline materials 978-1-55899-438-6Silicon Front-End Technology 1 1998-01-01 Cambridge][][][][][][][][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6f1590, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5b256244, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1766693f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@46a3c353][][][][][][][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@56f265], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@465b0c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f821], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412fd3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412445], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4604ba], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411e1e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411c29], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411cf2], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f464], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f436], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f346], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134dc]][][][][][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@159e1, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@154fd, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15046, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@14b68, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@14819][]

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Artículos de revista (48)

Saragi R.T.; Calabrese C.; Juanes M.; Pinacho R.; Rubio J.E.; Perez C.; Lesarri A. pi-Stacking Isomerism in Polycyclic Aromatic Hydrocarbons: The 2-Naphthalenethiol Dimer . JOURNAL OF PHYSICAL CHEMISTRY LETTERS 2022; 0: 207-213.

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Capítulos de libros (4)

Castrillo, P.; Pinacho, R.; Rubio, J. E.; Vega, L. M.; Jaraiz, M. Atomistic modeling of defect diffusion in SiGe. En: Tibor Grasser; [et al.]. Simulation of Semiconductor Processes and Devices. SISPAD 2007. Springer; 2007. p. 9-12.

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Proyectos (17)

DESARROLLO DE NUEVAS TÉCNICAS MULTIFOTÓNICAS, MARCADO NO COVALENTE Y CELDA CRIOGÉNICA DE GAS AMORTIGUADOR PARA DETECCIÓN ROTACIONAL QUIRAL DE BANDA ANCHA. Equipo Investigadores: LESARRI GOMEZ, ALBERTO EUGENIO (IP); PEREZ CUADRADO, CRISTOBAL (IP); RUBIO GARCIA, JOSE EMILIANO; ENRIQUEZ GIRAUDO, MARIA LOURDES; JARAIZ MALDONADO, MARTIN; PINACHO GOMEZ, RUTH. Equipo de Trabajo: GRABOW, JENS UWE; JUANES SAN JOSE, MARCOS; SARAGI, RIZALINA TAMA; LI , WENQIN; STEBER, AMANDA LEE; PATTERSON ., DAVID; HERAS ELVIRA, DOMINGO; FENG , GANG; SAJEEV HUSSAIN, FARHA; MATA LOPEZ, SANTIAGO. PID2021-125015NB-I00. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, FONDOS FEDER, UNION EUROPEA, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/09/2022-31/08/2025

FEDERUnión EuropeaMnisterio de Ciencia e InnovaciónAEI
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Congresos (4)

Technical Digest - International Electron Devices Meeting, IEDM, 10/12/2007 - 12/12/2007
(Ponencia). Jaraiz M.; Castrillo P.; Pinacho R.; Rubio J. Technical Digest - International Electron Devices Meeting, IEDM
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Proyectos de innovación docente (5)

MENTUm: Mejora de un Sistema de Mentorización Integral Profesores Tutores-Alumnos Mentores en la E.T.S.I. Telecomunicación de la Universidad de Valladolid - PID2019/118. Universidad de Valladolid. 01/09/2019.
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