Inicio > GARCIA GARCIA, HECTOR

GARCIA GARCIA, HECTOR

Cargo
PROFESORES TITULARES DE UNIVERSIDAD
Departamento
Electricidad y Electrónica
Grupos de investigación
Grupo de Caracterización de Materiales y Dispositivos Electrónicos ( Electronic Materials and Devices Characterization Group, GCME)
 
Correo electrónico
hector.garcia.garcia@uva.es

Índice H en Scopus: 17
 

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81893]], camposKey:1369-8001 2024-01-01 A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81892]], camposKey:0167-577X 2024-01-01 Impact of the temperature on the conductive filament morphology in HfO2-based RRAM00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=86533]], camposKey:2079-9292 2024-01-01 On the Asymmetry of Resistive Switching Transitions00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=86532]], camposKey:1369-8001 2024-01-01 Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=77893]], camposKey:0022-3727 2023-01-01 Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75337]], camposKey:0167-9317 2023-01-01 Variability and power enhancement of current controlled resistive switching devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75055]], camposKey:0021-8979 2022-11-21 Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=68686]], camposKey:0960-0779 2022-07-01 An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71430]], camposKey:2079-9292 2022-02-01 Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71431]], camposKey:1996-1944 2022-02-01 Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=68685]], camposKey:0038-1101 2022-01-01 Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65132]], camposKey:0038-1101 2021-01-01 Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=67164]], camposKey:2079-9292 2021-01-01 Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices28160, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65135]], camposKey:2162-8769 2021-01-01 Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65137]], camposKey:1938-6737 2021-01-01 Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications2935, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65133]], camposKey:0038-1101 2021-01-01 Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65136]], camposKey:1938-6737 2021-01-01 Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications4559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55346]], camposKey:1938-6737 2020-01-01 Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications1720, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57061]], camposKey:2168-6734 2020-01-01 Current Pulses to Control the Conductance in RRAM Devices291296, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55347]], camposKey:1938-6737 2020-01-01 Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films36, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57159]], camposKey:2168-6734 2020-01-01 Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52709]], camposKey:0167-9317 2019-01-01 Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52710]], camposKey:0167-9317 2019-01-01 Controlling the intermediate conductance states in RRAM devices for synaptic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52708]], camposKey:0167-9317 2019-01-01 Dynamics of set and reset processes on resistive switching memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52711]], camposKey:0021-8979 2018-01-01 Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11939]], camposKey:2190-4286 2018-01-01 Atomic layer deposition and properties of ZrO2/Fe2O3 thin films119128, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40100]], camposKey:0361-5235 2018-01-01 Electrical Characterization of Defects Created by gamma-Radiation in HfO2-Based MIS Structures for RRAM Applications50135018, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40101]], camposKey:0361-5235 2018-01-01 Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals49934997, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11079]], camposKey:0361-5235 2018-01-01 The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal Insulator Metal (MIM) Devices for Memory Applications49384943, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3787]], camposKey:0167-9317 2017-06-25 A physically based model for resistive memories including a detailed temperature and variability description2629, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39977]], camposKey:2163-4971 2017-01-01 A Physically Based Model to describe Resistive Switching in different RRAM technologies00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39976]], camposKey:2163-4971 2017-01-01 Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3785]], camposKey:0741-3106 2017-01-01 Experimental observation of negative susceptance in HfO2-based RRAM devices12161219, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3786]], camposKey:0167-9317 2017-01-01 Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices3033, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3789]], camposKey:0018-9383 2016-05-01 Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors18771883, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11942]], camposKey:1938-5862 2016-01-01 A complete suite of experimental techniques for electrical characterization of conventional and incoming high-k dielectric-based devices153165, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11941]], camposKey:0160-8371 2016-01-01 Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications5257, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3788]], camposKey:1931-7573 2016-01-01 Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11080]], camposKey:1938-5862 2016-01-01 Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors335342, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3790]], camposKey:0021-8979 2015-12-30 A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3791]], camposKey:0167-9317 2015-11-01 Charge and current hysteresis in dysprosium-doped zirconium oxide thin films5558, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3792]], camposKey:2166-2746 2015-05-01 Hole trap distribution on 2 MeV electron irradiated high-k dielectrics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3793]], camposKey:0268-1242 2015-03-01 Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3794]], camposKey:0268-1242 2015-03-01 Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3797]], camposKey:0948-1907 2015-01-01 Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films181187, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3796]], camposKey:0040-6090 2015-01-01 Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition5559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6958]], camposKey:2163-4971 2015-01-01 Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3795]], camposKey:0003-6951 2015-01-01 Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11081]], camposKey:0272-9172 2014-01-01 Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3799]], camposKey:0026-2714 2014-01-01 Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors17071711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3800]], camposKey:0268-1242 2013-05-10 Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3801]], camposKey:0040-6090 2013-05-01 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon482487, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3802]], camposKey:0021-8979 2013-01-14 Experimental verification of intermediate band formation on titanium-implanted silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6954]], camposKey:2163-4971 2013-01-01 Deep level defects on mono-like and polycrystalline silicon solar cells313316, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3804]], camposKey:0734-2101 2013-01-01 Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6963]], camposKey:2163-4971 2013-01-01 Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes285288, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3803]], camposKey:2166-2746 2013-01-01 Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6952]], camposKey:2163-4971 2013-01-01 Photocurrent measurements for solar cells characterization349352, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6953]], camposKey:2163-4971 2013-01-01 The role of defects in solar cells: Control and detection Defects in solar cells301304, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3805]], camposKey:0038-1101 2013-01-01 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics6574, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6961]], camposKey:0094-243X 2012-01-01 Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation189192, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3806]], camposKey:0040-6090 2011-01-31 Electrical characterization of high-pressure reactive sputtered ScO x films on silicon22682272, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3808]], camposKey:2166-2746 2011-01-01 Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3807]], camposKey:2166-2746 2011-01-01 Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6962]], camposKey:1938-5862 2011-01-01 Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics349359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3809]], camposKey:2166-2746 2011-01-01 Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3810]], camposKey:0021-8979 2010-06-01 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6964]], camposKey:1938-5862 2010-01-01 Electrical characterization of high-pressure reactive sputtered Sc2O3 films on silicon287297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3811]], camposKey:0167-9317 2009-07-01 Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors16891691, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3812]], camposKey:1071-1023 2009-02-19 Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics416420, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3813]], camposKey:1071-1023 2009-02-17 Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors389393, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3814]], camposKey:0021-8979 2008-11-25 Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3815]], camposKey:0013-4651 2008-10-01 Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3817]], camposKey:0022-3093 2008-01-15 Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices393398, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3816]], camposKey:0022-3093 2008-01-15 Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films404408, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11944]], camposKey:0272-9172 2007-12-01 Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording169174, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3818]], camposKey:0268-1242 2007-12-01 Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics13441351, 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com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3823]], camposKey:0268-1242 2005-10-01 A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition10441051, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3824]], camposKey:0026-2714 2005-05-01 Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition949952, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3825]], camposKey:0040-6090 2005-03-01 Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates222229, 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Maldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A., García, H.; González, M. B.; Jiménez-Molinos, F.; Campabadal, F.; Miranda, E.; Dueñas, S.; Castán, H.; Roldán, J.B. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2024; 169: num: 107878

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García, Héctor; Ossorio, Óscar G.; Dueñas, Salvador; Castán, Helena. Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices. IEEE; 2020
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Capítulos de libros (25)

Castán, H.; Dueñas, S.; Sardiña, A.; García García, Héctor; et al. RRAM memories with ALD high-k dielectrics: electrical characterization and analytical modelling.. En: VV.AA. Thin Film Processes - Artifacts on Surface Phenomena and Technological Facets. Intech; 2017. p. 165-178

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Cruz Gonzalez C.S., Sahelices B., Jimenez J., Ossorio O.G., Castan H., Gonzalez M.B., Vinuesa G., Duenas S.,Campabadal F., Garcia H. (2021). Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes. En -. 13th Spanish Conference on Electron Devices, CDE 2021. 1 ed. IEEE; 2021. p. 74-77
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Proyectos (8)

CARACTERIZACIÓN ELÉCTRICA AVANZADA DE DISPOSITIVOS MEMRISTIVOS. Equipo personal investigador: CASTAN LANASPA, MARÍA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP); GARCIA GARCIA, HECTOR; VINUESA SANZ, GUILLERMO. Equipo de Trabajo: GARCIA OCHOA, EDUARDO; GONZALEZ OSSORIO, OSCAR; VINUESA SANZ, GUILLERMO; TAMM ,, AILE; KALAM ., KRISTJAN; KUKLI ., KAUPO. Personal Contratado: DEL VAL DE LA FUENTE, TERESA. PID2022-139586NB-C43. Entidades colaboradoras AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS (CSIC), UNIVERSIDAD DE GRANADA, UNIVERSIDAD AUTONOMA DE BARCELONA . Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, FONDOS FEDER, UNION EUROPEA, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/09/2023-31/08/2026

FEDERUnión EuropeaMnisterio de Ciencia e InnovaciónAEI
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Congresos (43)

13th Spanish Conference on Electron Devices, CDE 2021, Sevilla ( ESPAÑA ) 09/06/2021 - 11/06/2021
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Jimenez-Molinos F.; Garcia H.; Gonzalez M.B.; Duenas S.; Castan H.; Miranda E.; Campabadal F.; Roldan J.B. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Jimenez-Molinos F.; Garcia H.; Gonzalez M.B.; Duenas S.; Castan H.; Miranda E.; Campabadal F.; Roldan J.B. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Jimenez-Molinos F.; Garcia H.; Gonzalez M.B.; Duenas S.; Castan H.; Miranda E.; Campabadal F.; Roldan J.B. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
(Ponencia). Jimenez-Molinos F.; Garcia H.; Gonzalez M.B.; Duenas S.; Castan H.; Miranda E.; Campabadal F.; Roldan J.B. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
(Ponencia). Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.; Campabadal F.; Garcia H. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
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