[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65887]], camposKey:1932-6203 2021-09-14 Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65184]], camposKey:1541-7026 2021-03-01 Optimized programming algorithms for multilevel RRAM in hardware neural networks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65132]], camposKey:0038-1101 2021-01-01 Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=67164]], camposKey:2079-9292 2021-01-01 Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices28160, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65135]], camposKey:2162-8769 2021-01-01 Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65137]], camposKey:1938-6737 2021-01-01 Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications2935, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65133]], camposKey:0038-1101 2021-01-01 Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65136]], camposKey:1938-6737 2021-01-01 Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications4559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65185]], camposKey:0018-9383 2020-11-01 Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays46114615, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55346]], camposKey:1938-6737 2020-01-01 Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications1720, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57061]], camposKey:2168-6734 2020-01-01 Current Pulses to Control the Conductance in RRAM Devices291296, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55347]], camposKey:1938-6737 2020-01-01 Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films36, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57060]], camposKey:2079-9292 2020-01-01 Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays8640, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57063]], camposKey:1930-8876 2019-09-01 Low-energy inference machine with multilevel HfO2 RRAM arrays174177, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52710]], camposKey:0167-9317 2019-01-01 Controlling the intermediate conductance states in RRAM devices for synaptic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52708]], camposKey:0167-9317 2019-01-01 Dynamics of set and reset processes on resistive switching memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57062]], camposKey:2166-532X 2019-01-01 Multilevel HfO2-based RRAM devices for low-power neuromorphic networks0811200, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52711]], camposKey:0021-8979 2018-01-01 Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11079]], camposKey:0361-5235 2018-01-01 The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal Insulator Metal (MIM) Devices for Memory Applications49384943, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3785]], camposKey:0741-3106 2017-01-01 Experimental observation of negative susceptance in HfO2-based RRAM devices12161219][][][][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63917]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62152]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62942]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63917]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62152]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=62942]]][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@200cdc8b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@700bda84, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@45de14b2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@413e9bda, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@710fff2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@29e1ca6e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1c2f2064, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@297a8870][][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@648298, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@648278, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@6480a3][][][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=60571]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=60570]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=60571]], com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.commons.ArgosPK[act=ESF, cont=60570]]][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@5bc572], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f93f]][][][][][][][]