Inicio > JARAIZ MALDONADO, MARTIN

JARAIZ MALDONADO, MARTIN

CATEDRATICOS DE UNIVERSIDAD
Electricidad y Electrónica
GRUPO DE ESPECTROSCOPÍA DE PLASMAS Y CHORROS SUPERSÓNICOS
 
mjaraiz@ele.uva.es
0

Índice H en Web of Science: 20
Índice H en Scopus: 22
 

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=59748]], camposKey:0022-3263 2021-01-15 Molecular Rotation Spectrum of Tetracyclic Quinolizidines: Observation of trans-Matrine and the Elusive cis-Matrine18611867, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52950]], camposKey:2041-6520 2020-02-28 Rational selection of co-catalysts for the deaminative hydrogenation of amides22252230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50505]], camposKey:0022-3263 2019-11-01 Mimicking Halimane Synthases: Monitoring a Cascade of Cyclizations and Rearrangements from Epoxypolyprenes1376413779, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52951]], camposKey:0268-2605 2019-07-01 Reduction of furfural by Mn/2,4,6-Coll.HCl/H2O: Mechanistic aspects of this reaction00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50500]], camposKey:2155-5435 2019-01-01 An Efficient Microkinetic Modeling Protocol: Start with Only the Dominant Mechanisms, Adjust All Parameters, and Build the Complete Model Incrementally48044809, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=49985]], camposKey:1089-5639 2019-01-01 Rotational Spectrum, Tunneling Motions, and Intramolecular Potential Barriers in Benzyl Mercaptan84358440, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52952]], camposKey:0079-6425 2018-01-01 Kinetic Monte Carlo simulation for semiconductor processing: A review132, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=38483]], camposKey:0947-6539 2018-01-01 Sulfur Hydrogen Bonding in Isolated Monohydrates: Furfuryl Mercaptan versus Furfuryl Alcohol65646571, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50501]], camposKey:0022-3263 2018-01-01 15-Hydroxygermacranolides as Sources of Structural Diversity: Synthesis of Sesquiterpene Lactones by Cyclization and Rearrangement Reactions. Experimental and DFT Study54805495, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7184]], camposKey:0022-3263 2017-04-07 A DFT-Based Computational-Experimental Methodology for Synthetic Chemistry: Example of Application to the Catalytic Opening of Epoxides by Titanocene37603766, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7220]], camposKey:1463-9076 2017-01-01 Rotational spectra of tetracyclic quinolizidine alkaloids: does a water molecule flip sparteine?1755317559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50506]], camposKey:2193-5807 2016-08-01 Cover Picture: Ti-Mediated Efficient Reductive Dehalogenation of Carbon¿Halogen Bonds (Asian J. Org. Chem. 8/2016)00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7775]], camposKey:2193-5807 2016-08-01 Ti-Mediated Efficient Reductive Dehalogenation of Carbon-Halogen Bonds9911001, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7777]], camposKey:1477-0520 2015-01-01 Homocoupling versus reduction of radicals: an experimental and theoretical study of Ti(III)-mediated deoxygenation of activated alcohols34623469, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7778]], camposKey:0947-6539 2013-05-01 Structural Diversity from the Transannular Cyclizations of Natural Germacrone and Epoxy Derivatives: A TheoreticalExperimental Study65986612, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7779]], camposKey:0021-8979 2011-05-15 Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7786]], camposKey:0040-6090 2010-02-26 Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures24482453, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7752]], camposKey:0921-5107 2008-12-05 Long and double hop kinetic Monte Carlo: Techniques to speed up atomistic modeling without losing accuracy202206, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7767]], camposKey:0921-5107 2008-12-05 The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy260263, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7768]], camposKey:0038-1101 2008-09-01 From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon14301436, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7735]], camposKey:0272-9172 2008-01-01 Atomistic Simulation and Subsequent Optimization of Boron USJ Using Pre-Amorphization and High Ramp Rates Annealing2290, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7771]], camposKey:0021-8979 2008-01-01 Comprehensive model of damage accumulation in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7751]], camposKey:0094-243X 2008-01-01 The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study2090, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50503]], camposKey:0163-1918 2007-12-01 Current capabilities and future prospects of atomistic process simulation951954, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7738]], camposKey:0018-9383 2007-09-01 Predictive simulation of advanced Nano-CMOS devices based on kMC process simulation21552163, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7760]], camposKey:1930-8876 2007-01-01 Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D3380, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7766]], camposKey:1930-8876 2007-01-01 From point defects to dislocation loops: a comprehensive TCAD model for self-interstitial defects in silicon3340, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7783]], camposKey:0168-583X 2006-12-01 Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo6367, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52953]], camposKey:0163-1918 2006-01-01 Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39683]], camposKey:2380-9248 2006-01-01 Design and optimization of nanoCMOS devices using predictive atomistic physicsbased process modeling1160, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7788]], camposKey:0272-9172 2006-01-01 Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthk99104, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7790]], camposKey:0921-5107 2005-12-05 Bimodal distribution of damage morphology generated by ion implantation389391, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7791]], camposKey:0921-5107 2005-12-05 Comprehensive modeling of ion-implant amorphization in silicon383385, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7773]], camposKey:0921-5107 2005-12-05 Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations392396, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39684]], camposKey:0921-5107 2005-12-05 Ion-implant simulations: The effect of defect spatial correlation on damage accumulation386388, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7772]], camposKey:0921-5107 2005-12-05 Physically based modeling of dislocation loops in ion implantation processing in silicon404408, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7774]], camposKey:0021-8979 2005-09-01 Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7789]], camposKey:0021-8979 2005-08-15 Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7781]], camposKey:1098-0121 2005-07-01 Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7780]], camposKey:0003-6951 2005-06-20 Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7787]], camposKey:0921-5107 2004-12-15 A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations345348, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7782]], camposKey:0921-5107 2004-12-15 Comprehensive, physically based modelling of As in Si135140, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39685]], camposKey:0921-5107 2004-12-15 Physical modeling of Fermi-level effects for decanano device process simulations284289, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7776]], camposKey:0921-5107 2004-12-15 Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation151155, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7733]], camposKey:0374-4884 2004-12-01 Atomistic modeling and simulation of boron diffusion in crystalline materials: KMC00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7785]], camposKey:0003-6951 2004-06-14 Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features49624964, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7769]], camposKey:1098-0121 2003-11-01 Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7765]], camposKey:0021-8979 2003-07-01 Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films163168, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7755]], camposKey:0168-583X 2003-04-01 Statistical 3D damage accumulation model for ion implant simulators138142, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7764]], camposKey:0038-1101 2002-09-01 Enhanced modelization of ion implant simulation in compound semiconductors13151324, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7784]], camposKey:0021-8979 2002-08-01 Carbon in silicon: Modeling of diffusion and clustering mechanisms15821587, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7747]], camposKey:0021-8979 2002-01-15 Improved binary collision approximation ion implant simulators658667, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52954]], camposKey:1930-8876 2002-01-01 Exploring methods for adequate simulation of sub-100nm devices299302, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=580]], camposKey:0168-583X 2001-06-01 Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si1216, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7753]], camposKey:0168-583X 2001-05-01 Algorithm for statistical noise reduction in three-dimensional ion implant simulations433438, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52956]], camposKey:0272-9172 2000-12-01 Atomistic modeling of complex silicon processing scenarios00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52955]], camposKey:0272-9172 2000-12-01 The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7727]], camposKey:0883-7694 2000-06-01 Simulation of defects and diffusion phenomena in silicon4550, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7770]], camposKey:1369-8001 2000-03-01 Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data5963, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7754]], camposKey:1369-8001 1999-12-01 Cluster ripening and transient enhanced diffusion in silicon369376, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52957]], camposKey:0163-1918 1999-12-01 Fundamental diffusion issues for deep-submicron device processing333336, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7744]], camposKey:0003-6951 1999-08-02 Activation and deactivation of implanted B in Si662664, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7742]], camposKey:0003-6951 1999-06-14 B cluster formation and dissolution in Si: A scenario based on atomistic modeling36573659, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7745]], camposKey:0031-9007 1999-05-31 Energetics of self-interstitial clusters in Si44604463, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7756]], camposKey:0003-6951 1999-04-05 Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion20172019, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7743]], camposKey:0272-9172 1999-01-01 Ostwald ripening of {113} defects precursors and transient enhanced diffusion163168, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7757]], camposKey:0003-6951 1998-09-07 Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model14211423, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7746]], camposKey:0021-8979 1998-06-01 Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model61826184, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7762]], camposKey:0272-9172 1998-01-01 Atomistic modeling of point and extended defects in crystalline materials4353, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7740]], camposKey:0272-9172 1998-01-01 Monte Carlo atomistic simulation of polycrystalline aluminum deposition127132, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=572]], camposKey:0267-0836 1997-11-01 Molecular dynamics simulations of ion bombardment processes893896, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7749]], camposKey:0021-8979 1997-05-01 Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon60316050, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7748]], camposKey:0003-6951 1997-04-28 B diffusion and clustering in ion implanted Si: The role of B cluster precursors22852287, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=571]], camposKey:0021-8979 1997-02-01 Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation14881494, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7750]], camposKey:0272-9172 1997-01-01 Atomistic model of transient enhanced diffusion and clustering of boron in silicon341346, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7729]], camposKey:0003-6951 1996-04-22 Simulation of cluster evaporation and transient enhanced diffusion in silicon23952397, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7730]], camposKey:0921-5107 1996-02-01 Simulations of thin film deposition from atomic and cluster beams17, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7732]], camposKey:0003-6951 1996-01-15 Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena409411, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7741]], camposKey:0272-9172 1996-01-01 Atomic scale simulations of arsenic ion implantation and annealing in silicon4550, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=591]], camposKey:0168-583X 1996-01-01 Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions156159, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52958]], camposKey:0163-1918 1995-12-01 Ion implantation and transient enhanced diffusion7780, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=587]], camposKey:0267-0836 1995-11-01 Detailed computer simulation of ion implantation processes into crystals11911193, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7728]], camposKey:0168-583X 1995-08-01 DEFECTS FROM IMPLANTATION IN SILICON BY LINKED MARLOWE-MOLECULAR DYNAMICS CALCULATIONS180182, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7731]], camposKey:0168-583X 1995-08-01 DIFFUSION AND INTERACTIONS OF POINT-DEFECTS IN SILICON - MOLECULAR-DYNAMICS SIMULATIONS247255, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7739]], camposKey:0168-583X 1995-08-01 POINT-DEFECT ACCUMULATION IN SILICON IRRADIATED BY ENERGETIC PARTICLES - A MOLECULAR-DYNAMICS SIMULATION207210, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=568]], camposKey:0168-583X 1995-01-01 An improved molecular dynamics scheme for ion bombardment simulations711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52959]], camposKey:0168-583X 1995-01-01 Defects from implantation in silicon by linked Marlow-molecular dynamics calculations180182, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7759]], camposKey:0168-583X 1995-01-01 Low energy ion implantation simulation using a modified binary collision approximation code228231, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=570]], camposKey:0168-583X 1995-01-01 Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions301304, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7761]], camposKey:0272-9172 1994-01-01 On the forward conduction mechanisms in SiC P-N junctions151156, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7737]], camposKey:0042-207X 1993-03-01 DETAILED COMPUTER-SIMULATION OF DAMAGE ACCUMULATION IN ION IRRADIATED CRYSTALLINE TARGETS321323, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7758]], camposKey:0168-583X 1993-01-01 Computer simulation of point-defect distributions generated by ion implantation172175, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7734]], camposKey:0021-8979 1992-05-15 INTERWELL ENHANCEMENT OF THE PHOTOLUMINESCENCE EFFICIENCY IN GAAS/ALGAAS QUANTUM-WELLS51365139, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7763]], camposKey:0021-8979 1991-01-01 Optical capture cross sections of palladium in silicon298301, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=7736]], camposKey:0013-4651 1986-09-01 A NON-FICKIAN MODEL OF THE BORON IN SILICON DIFFUSION FROM BN SOURCES18951900, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6957]], camposKey:0038-1101 1986-01-01 Electron thermal emission rates of nickel centers in silicon883884, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23310]], camposKey:0210-2064 1986-01-01 Transporte magnético de 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Singer, Julien; Wacquant, Francois; Villanueva, Davy; Salvetti, Frederic; Laviron, Cyrille; Cueto, Olga; Rivallin, Pierrette; Jaraiz, Martin; Poncet, Alain. Atomistic Simulation and Subsequent Optimization of Boron USJ Using Pre-Amorphization and High Ramp Rates Annealing . En: B. J. Pawlak; [et al.]. Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A.. Materials Research Society; 2008. p. 229-0


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ESPECTROSCOPÍA Y DINÁMICA EN EXPANSIONES SUPERSÓNICAS: INTERACCIONES NO COVALENTES EN MOLÉCULAS BIOLÓGICAS Y PREBIÓTICAS. Equipo Investigadores: JARAIZ MALDONADO, MARTIN (IP); LESARRI GOMEZ, ALBERTO EUGENIO (IP); RUBIO GARCIA, JOSE EMILIANO; ENRIQUEZ GIRAUDO, MARIA LOURDES; PINACHO GOMEZ, RUTH. Equipo de Trabajo: JUANES SAN JOSE, MARCOS; SARAGI ., RIZALINA TAMA. PGC2018-098561-B-C22. Entidades colaboradoras UNIVERSIDAD DEL PAIS VASCO/EUSKAL HERRIKO UNIBERTSITATEA. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, FONDOS FEDER. 01/01/2019-31/12/2021
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DIFFUSION OF ATOMISTIC DEFECTS OBJECT-ORIENTED SIMULATOR. Equipo Investigadores: JARAIZ MALDONADO, MARTIN (IP). Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: FREESCALE SEMICONDUCTOR INC.. 2006-10-01
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MARTIN BRAGADO, IGNACIO SIMULACIÓN ATOMÍSTICA DE PROCESOS PARA MICROELECTRÓNICA. Universidad de Valladolid; 2004

 
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AIP Conference Proceedings, Monterey 08/06/2008 - 13/06/2008
(Ponencia). Sekowski M.; Burenkov A.; Hernandez-Mangas J.; Martinez-Limia A.; Ryssel H. AIP Conference Proceedings
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