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JIMENEZ LOPEZ, JUAN IGNACIO

CATEDRATICOS DE UNIVERSIDAD
Física de la Materia Condensada, Cristalografía y Mineralogía
MATERIALES SEMICONDUCTORES Y NANOESTRUCTURAS PARA LA OPTOELECTRÓNICA
 
juanignacio.jimenez@uva.es
0

Índice H en Web of Science: 3
Índice H en Scopus: 20
 

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57476]], camposKey:0361-5235 2020-01-01 A Cathodoluminescence Study on the Diffusion Length in AlGaInP/InGaP/AlInP Solar Cell Heterostructures51845189, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57480]], camposKey:2050-0505 2020-01-01 Daylight luminescence system for silicon solar panels based on a bias switching method38393853, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57479]], camposKey:1938-6737 2020-01-01 Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence and cathodoluminescence4355, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57478]], camposKey:0146-9592 2020-01-01 Effect of thermal lensing and the micrometric degraded regions on the catastrophic optical damage process of high-power laser diodes00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57477]], camposKey:0361-5235 2020-01-01 Electrical Activity of Crystal Defects in Multicrystalline Si50915096, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51301]], camposKey:0957-4484 2019-09-03 Fourier transform study of the complex electric field induced on axially heterostructured nanowires00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=41566]], camposKey:0277-786X 2019-01-01 A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: Role of the strained QWs00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51302]], camposKey:0021-8979 2019-01-01 Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51642]], camposKey:2159-3930 2019-01-01 Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth14881500, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=41565]], camposKey:0022-3727 2019-01-01 Thermomechanical issues of high power laser diode catastrophic optical damage00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51304]], camposKey:0361-5235 2018-09-01 Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry49644969, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51303]], camposKey:1862-6300 2018-01-01 About the Interaction Between a Laser Beam and Group IV Nanowires: A Study of the Electromagnetic Field Enhancement in Homogeneous and Heterostructured Nanowires00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51278]], camposKey:0361-5235 2018-01-01 Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys50615067, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57534]], camposKey:2059-8521 2018-01-01 Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques33593365, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39318]], camposKey:0021-8979 2018-01-01 Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51306]], camposKey:0957-4484 2018-01-01 Growth dynamics of SiGe nanowires by the vapour-liquid-solid method and its impact on SiGe/Si axial heterojunction abruptness00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51305]], camposKey:0146-9592 2018-01-01 Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces35053508, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=50488]], camposKey:0361-5235 2018-01-01 Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells50775082, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51307]], camposKey:0277-786X 2018-01-01 Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=42454]], camposKey:2159-6859 2018-01-01 Thermal and mechanical issues of high-power laser diode degradation995999, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=10999]], camposKey:0277-786X 2017-01-01 About the impact of the materials properties in the catastrophic degradation of high power GaAs based laser diodes00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11948]], camposKey:0022-3727 2017-01-01 Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: Influence on the catastrophic optical 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Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes627630, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51282]], camposKey:0957-4484 2016-01-01 Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods957060, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51308]], camposKey:0734-2101 2016-01-01 Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51280]], camposKey:0749-6036 2016-01-01 Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells4553, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51281]], camposKey:0003-6951 2016-01-01 GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11949]], camposKey:0957-4484 2016-01-01 Local electric field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51283]], camposKey:0022-2313 2016-01-01 New strategies invonving upconverting nanoparticles for determining moderate temperatures by luminescence thermometry711716, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8770]], camposKey:0277-786X 2016-01-01 Sequential Description of the Catastrophic Optical Damage of High Power Laser Diodes00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57536]], camposKey:0957-4484 2016-01-01 Spectrally and spatially resolved cathodoluminescence of undoped/Mg-doped GaN core-shell nanowires: a local probe into activation of Mg acceptors in non-polar and semi-polar crystal faces0957060, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51310]], camposKey:0272-9172 2015-01-01 Enhanced signal micro-raman study of SiGe nanowires and SiGe/Si nanowire axial heterojunctions grown using Au and Ga-Au catalysts16, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51311]], camposKey:0026-2714 2015-01-01 Evidence of chlorine ion 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com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51313]], camposKey:0947-8396 2014-03-01 Raman spectrum of Si nanowires: Temperature and phonon confinement effects13211331, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51315]], camposKey:2158-5849 2014-02-01 Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth4153, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51314]], camposKey:1882-0778 2014-02-01 Electron density gradients in ammonothermally grown Si-doped GaN00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51319]], camposKey:1062-7995 2014-01-01 About the origin of low wafer performance and crystal defect generation on seed-cast growth 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camposKey:1862-6351 2012-07-01 Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation16511654, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51325]], camposKey:0038-7010 2012-03-01 Quantitative determination of gaseous phase compositions in fluid inclusions by raman microspectrometry156160, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=42016]], camposKey:0038-7010 2012-01-01 Analysis of the residuals in grave goods from the vaccaea era at the necropolis of "las ruedas" in pintia141145, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=51287]], camposKey:0272-9172 2012-01-01 Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals5358, 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Artículos de revista (327)

Dadgostar, S.; Belloso Casuso, C.; Martínez, O.; Hinojosa, M.; García, I.; Jiménez, J. A Cathodoluminescence Study on the Diffusion Length in AlGaInP/InGaP/AlInP Solar Cell Heterostructures. Journal of Electronic Materials 2020; 49(9): 5184-5189.

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Capítulos de libros (18)

Souto, J.; Pura, J.L.; Jiménez, J. Microscopic degradation and failure processes in high-power diode lasers. En: Institute of Electrical and Electronics Engineers,. Proceedings of the 2019 IEEE High Power Diode Lasers and Systems Conference. IEEE; 2019. p. 13-14

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Moretón Fernández, Angel; Gallardo Saavedra, Sara; Jiménez Martín, Marta María; Alonso Gómez, Víctor; Hernández Callejo, Luis; Morales Aragonés, José Ignacio; Martínez Sacristán, Oscar; González Rebollo, Miguel Ángel; Jiménez López, Juan. Influence of large periods of DC current injection in c-Si photovoltaic panels. En WIP Renewable Energies. 36th European Photovoltaic Solar Energy Conference and Exhibition. 1 ed. 2019. p. 1079-1080
Moretón Fernández, Angel; Gallardo Saavedra, Sara; Jiménez Martín, Marta María; Alonso Gómez, Víctor; Hernández Callejo, Luis; Morales Aragonés, José Ignacio; Martínez Sacristán, Oscar; González Rebollo, Miguel Ángel; Jiménez López, Juan (2019). Influence of large periods of DC current injection in c-Si photovoltaic panels. En WIP Renewable Energies. 36th European Photovoltaic Solar Energy Conference and Exhibition. 1 ed. 2019. p. 1079-1080
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Proyectos (31)

ADQUISICIÓN DE EQUIPO RAMAN AFM. Equipo Investigadores: JIMENEZ LOPEZ, JUAN IGNACIO (IP). IR2020-1-UVA09. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: FONDOS FEDER, JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN. 13/11/2020-30/10/2021
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Convenios (13)

ESTUDIO DE SEMICONDUCTORES MEDIANTE TÉCNICAS ESPECTROSCÓPICAS: RAMAN Y LUMINISCENCIA.. Equipo Investigadores: JIMENEZ LOPEZ, JUAN IGNACIO (IP). Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: FUNDACION GENERAL DE LA UVA.. 2021-01-01
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Otras ayudas y becas (6)

CONTRATO PREDOCTORAL JUNTA CASTILLA Y LEÓN DE IRENE MEDIAVILLA MARTINEZ:Mejora de la estabilidad y la eficiencia en células solaresavanzadas basadas en perovskitas y nanohilos semiconductores. JIMENEZ LOPEZ, JUAN IGNACIO (Director). MEDIAVILLA MARTINEZ, IRENE (Beneficiario). 20/09/2021 - 16/07/2025. 94.299,99 EUR.
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(Ponencia). Torres A.; Jimenez J.; Vega B.; de Saja J. NON-DEBYE BEHAVIOUR OF DIPOLAR RELAXATION IN SYSTEMS WITH DIPOLAR INTERACTION.
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Patentes (6)

Ignacio Morales Aragonés, Sara Gallardo Saavedra, Angel Moretón Fernández, Luis Hernández Callejo, Victor Alonso Gómez, Miguel Ángel González Rebollo, Oscar Martinez Sacristán, Juan Jiménez López. SISTEMA DE COMUNICACIONES SOBRE CABLEADO DE CORRIENTE CONTINUA EN INSTALACIONES SOLARES FOTOVOLTAICAS. P202030280. 2020
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ACCIÓN INTEGRADA CON FRANCIA. SÍNTESIS Y CARACTERIZACIÓN DE MATERIALES NANOESTRUCTURADOS EN CAPAS DELGADAS PARA LA MICRO Y OPTOELECTRÓNICA.. 01/01/2005 - 31/12/2005
     INSTITUT DES MATERIAUX JEAN ROUXEL . NANTES ( FRANCIA )
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