[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81893]], camposKey:1369-8001 2024-01-01 A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81892]], camposKey:0167-577X 2024-01-01 Impact of the temperature on the conductive filament morphology in HfO2-based RRAM00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=86533]], camposKey:2079-9292 2024-01-01 On the Asymmetry of Resistive Switching Transitions00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=86532]], camposKey:1369-8001 2024-01-01 Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=77893]], camposKey:0022-3727 2023-01-01 Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75337]], camposKey:0167-9317 2023-01-01 Variability and power enhancement of current controlled resistive switching devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75055]], camposKey:0021-8979 2022-11-21 Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71429]], camposKey:2079-4991 2022-08-01 Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=68686]], camposKey:0960-0779 2022-07-01 An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=75469]], camposKey:2079-9292 2022-06-01 Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71430]], camposKey:2079-9292 2022-02-01 Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71431]], camposKey:1996-1944 2022-02-01 Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=68685]], camposKey:0038-1101 2022-01-01 Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66588]], camposKey:1936-0851 2021-11-23 Standards for the Characterization of Endurance in Resistive Switching Devices1721417231, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66007]], camposKey:0957-4484 2021-08-13 Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71432]], camposKey:2574-0970 2021-05-28 Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media51525163, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65132]], camposKey:0038-1101 2021-01-01 Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=67164]], camposKey:2079-9292 2021-01-01 Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices28160, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65135]], camposKey:2162-8769 2021-01-01 Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65137]], camposKey:1938-6737 2021-01-01 Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications2935, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65133]], camposKey:0038-1101 2021-01-01 Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65136]], camposKey:1938-6737 2021-01-01 Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications4559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66008]], camposKey:0925-8388 2020-12-15 Properties of atomic layer deposited iron oxide and bismuth oxide chloride structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66009]], camposKey:0734-2101 2020-12-01 Structure and behavior of ZrO2-graphene-ZrO2stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=66010]], camposKey:0734-2101 2020-07-01 Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55351]], camposKey:0957-4484 2020-02-25 Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55346]], camposKey:1938-6737 2020-01-01 Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications1720, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=57061]], camposKey:2168-6734 2020-01-01 Current Pulses to Control the Conductance in RRAM Devices291296, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=55347]], camposKey:1938-6737 2020-01-01 Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films36, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52709]], camposKey:0167-9317 2019-01-01 Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52710]], camposKey:0167-9317 2019-01-01 Controlling the intermediate conductance states in RRAM devices for synaptic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52708]], camposKey:0167-9317 2019-01-01 Dynamics of set and reset processes on resistive switching memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40934]], camposKey:0040-6090 2019-01-01 Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates294300, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=52711]], camposKey:0021-8979 2018-01-01 Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11939]], camposKey:2190-4286 2018-01-01 Atomic layer deposition and properties of ZrO2/Fe2O3 thin films119128, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40100]], camposKey:0361-5235 2018-01-01 Electrical Characterization of Defects Created by gamma-Radiation in HfO2-Based MIS Structures for RRAM Applications50135018, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40101]], camposKey:0361-5235 2018-01-01 Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals49934997, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40099]], camposKey:2162-8769 2018-01-01 Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11079]], camposKey:0361-5235 2018-01-01 The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal Insulator Metal (MIM) Devices for Memory Applications49384943, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3787]], camposKey:0167-9317 2017-06-25 A physically based model for resistive memories including a detailed temperature and variability description2629, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39977]], camposKey:2163-4971 2017-01-01 A Physically Based Model to describe Resistive Switching in different RRAM technologies00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=39976]], camposKey:2163-4971 2017-01-01 Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3785]], camposKey:0741-3106 2017-01-01 Experimental observation of negative susceptance in HfO2-based RRAM devices12161219, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3786]], camposKey:0167-9317 2017-01-01 Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices3033, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3789]], camposKey:0018-9383 2016-05-01 Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors18771883, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11942]], camposKey:1938-5862 2016-01-01 A complete suite of experimental techniques for electrical characterization of conventional and incoming high-k dielectric-based devices153165, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11941]], camposKey:0160-8371 2016-01-01 Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications5257, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3788]], camposKey:1931-7573 2016-01-01 Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11080]], camposKey:1938-5862 2016-01-01 Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors335342, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3790]], camposKey:0021-8979 2015-12-30 A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3791]], camposKey:0167-9317 2015-11-01 Charge and current hysteresis in dysprosium-doped zirconium oxide thin films5558, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3792]], camposKey:2166-2746 2015-05-01 Hole trap distribution on 2 MeV electron irradiated high-k dielectrics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3793]], camposKey:0268-1242 2015-03-01 Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3794]], camposKey:0268-1242 2015-03-01 Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3797]], camposKey:0948-1907 2015-01-01 Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films181187, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23698]], camposKey:1888-8860 2015-01-01 Blue led: una nueva luz para el planeta azul8899, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3796]], camposKey:0040-6090 2015-01-01 Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition5559, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6958]], camposKey:2163-4971 2015-01-01 Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3795]], camposKey:0003-6951 2015-01-01 Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11081]], camposKey:0272-9172 2014-01-01 Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3799]], camposKey:0026-2714 2014-01-01 Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors17071711, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3800]], camposKey:0268-1242 2013-05-10 Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3801]], camposKey:0040-6090 2013-05-01 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon482487, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3802]], camposKey:0021-8979 2013-01-14 Experimental verification of intermediate band formation on titanium-implanted silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6954]], camposKey:2163-4971 2013-01-01 Deep level defects on mono-like and polycrystalline silicon solar cells313316, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23695]], camposKey:2255-5943 2013-01-01 El Parque Científico UVa con la transferencia Universidad-Empresa57, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3804]], camposKey:0734-2101 2013-01-01 Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6963]], camposKey:2163-4971 2013-01-01 Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes285288, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3803]], camposKey:2166-2746 2013-01-01 Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6952]], camposKey:2163-4971 2013-01-01 Photocurrent measurements for solar cells characterization349352, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6953]], camposKey:2163-4971 2013-01-01 The role of defects in solar cells: Control and detection Defects in solar cells301304, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3805]], camposKey:0038-1101 2013-01-01 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics6574, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6961]], camposKey:0094-243X 2012-01-01 Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation189192, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3806]], camposKey:0040-6090 2011-01-31 Electrical characterization of high-pressure reactive sputtered ScO x films on silicon22682272, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3808]], camposKey:2166-2746 2011-01-01 Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3807]], camposKey:2166-2746 2011-01-01 Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6962]], camposKey:1938-5862 2011-01-01 Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics349359, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3809]], camposKey:2166-2746 2011-01-01 Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23697]], camposKey:1888-8860 2011-01-01 Steve Jobs y la tecnología emocional3335, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3810]], camposKey:0021-8979 2010-06-01 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6964]], camposKey:1938-5862 2010-01-01 Electrical characterization of high-pressure reactive sputtered Sc2O3 films on silicon287297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3811]], camposKey:0167-9317 2009-07-01 Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors16891691, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3812]], camposKey:1071-1023 2009-02-19 Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics416420, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3813]], camposKey:1071-1023 2009-02-17 Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors389393, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3814]], camposKey:0021-8979 2008-11-25 Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3815]], camposKey:0013-4651 2008-10-01 Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3817]], camposKey:0022-3093 2008-01-15 Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices393398, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3816]], camposKey:0022-3093 2008-01-15 Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films404408, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11944]], camposKey:0272-9172 2007-12-01 Electrical characterization of high-k dielectrics by means of flat-band voltage transient recording169174, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3818]], camposKey:0268-1242 2007-12-01 Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics13441351, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3819]], camposKey:0013-4651 2007-08-31 Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3820]], camposKey:0026-2714 2007-04-01 Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics653656, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3821]], camposKey:0021-8979 2006-11-23 Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3822]], camposKey:0021-8979 2006-03-01 Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8947]], camposKey:1568-2609 2006-01-01 Disordered structure and density of gap states in high-permittivity thin solid films1230, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=8946]], camposKey:1568-2609 2006-01-01 Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment2870, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=23696]], camposKey:0213-2060 2006-01-01 Revisión de la incidencia de la Peste Negra (1348) en Navarra a través de un modelo matemático de población275314, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3823]], camposKey:0268-1242 2005-10-01 A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition10441051, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3824]], camposKey:0026-2714 2005-05-01 Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition949952, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3825]], camposKey:0040-6090 2005-03-01 Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates222229, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5370]], camposKey:0026-2714 2005-01-01 ON THE INFLUENCE OF SUBSTRATE CLEANING METHOD AND RAPID THERMAL ANNEALING CONDITIONS ON THE ELECTRICAL CHARACTERISTICS OF AL/SINX/SIO2/SI FABRICATED BY ECR-CVD978981, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3826]], camposKey:0268-1242 2004-09-01 The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon11411148, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3827]], camposKey:0021-8979 2004-08-01 Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon13651372, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5360]], camposKey:0272-9172 2004-01-01 Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6956]], camposKey:0272-9172 2004-01-01 Conductance transient comparative analysis of ECR-PECVD deposited SiNx,SiO2/SiNx and SiOxN gamma dielectric films on silicon substrates8387, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3828]], camposKey:0021-4922 2004-01-01 Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates6670, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6960]], camposKey:0272-9172 2004-01-01 On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2,Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films147152, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3829]], camposKey:0038-1101 2003-10-01 Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films16231629, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3830]], camposKey:0021-4922 2003-08-01 Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films49784981, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3832]], camposKey:0957-4522 2003-05-01 A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide375378, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3831]], camposKey:0957-4522 2003-05-01 Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films287290, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5382]], camposKey:0272-9172 2003-01-01 On the interface quality of MIS structures fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5¿Ta2O5¿Nb2O5 dielectric thin films00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3833]], camposKey:0021-4922 2002-11-01 Experimental verification of direct tunneling assisted electron capture of disordered-induced gap states in metal-insulator-semiconductor structures00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5380]], camposKey:0272-9172 2002-01-01 Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures.231236, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5364]], camposKey:0272-9172 2002-01-01 Radio-Frequency impedance analysis of anodic tantalum pentoxide thin films185190, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3834]], camposKey:0038-1101 2001-08-01 Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: An inexpensive and thermally stable high k dielectric14411450, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3835]], camposKey:0021-4922 2001-07-01 Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques44794484, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3837]], camposKey:0957-4522 2001-04-01 C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface263267, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3836]], camposKey:0957-4522 2001-04-01 DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films317321, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5361]], camposKey:1071-1023 2001-01-01 INFLUENCE OF ELECTRON CYCLOTRON RESONANCE NITROGEN PLASMA EXPOSURE ON THE ELECTRICAL CHARACTERISTICS OF SiNx:H/InP STRUCTURES186191, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11946]], camposKey:0734-211X 2001-01-01 Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx:H/InP structures186191, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3838]], camposKey:0026-2714 2000-12-01 Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx:H/InP and A1/SiNx:H/ in0.53Ga0.47As structures by DLTS and conductance transient techniques845848, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3839]], camposKey:0021-4922 2000-11-01 Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures62126215, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3840]], camposKey:0026-2714 1999-12-01 Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress659662, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3842]], camposKey:0021-8979 1999-12-01 Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced AI/SiNx:H/InP metal-insulator-semiconductor structures fabrication69246930, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3841]], camposKey:0734-2101 1999-12-01 Thermally induced improvements on SiNx:H/lnP devices21782182, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3844]], camposKey:0021-8979 1999-01-01 Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions79787980, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3846]], camposKey:0957-4522 1999-01-01 Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions413418, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3847]], camposKey:0957-4522 1999-01-01 Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication373377, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3843]], camposKey:0021-8979 1999-01-01 Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions48554860, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5357]], camposKey:0272-9172 1999-01-01 Fabrication on Ta2O5 thin films by anodic oxidation of tantalum nitride and tantalum silicide: growing mechanisms electrical characterization and ULSI M-I-M capacitor performances371378, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3845]], camposKey:0957-4522 1999-01-01 Use of anodic tantalum pentoxide for high-density capacitor fabrication379384, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5369]], camposKey:0272-9172 1998-01-01 Conductance transient study of Slow Traps in Al/SiNx:H/Si and Al/SiNx:H/InP metal-insulator-semiconductor structures8792, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3850]], camposKey:0021-8979 1998-01-01 Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures332338, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3848]], camposKey:0268-1242 1998-01-01 Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions389393, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3849]], camposKey:0021-8979 1998-01-01 Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method600603, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3853]], camposKey:0021-8979 1997-01-01 Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP31433150, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3851]], camposKey:0021-8979 1997-01-01 Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs43384345, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3852]], camposKey:0003-6951 1997-01-01 Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures826828, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3854]], camposKey:0038-1101 1997-01-01 Thermal emission processes of DX centres in AlxGa1-xAs:Si103109, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=5351]], camposKey:0951-3248 1996-01-01 Determination of three-dimensional deep level defect distribution by Capacitance-Voltage Transient Technique (CVTT121126, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3855]], camposKey:0021-8979 1996-01-01 Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions310315, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3856]], camposKey:0021-8979 1995-12-01 Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP53255330, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=12031]], camposKey:0267-0836 1995-01-01 Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors10741078, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3857]], camposKey:0268-1242 1994-12-01 Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique16371648, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40608]], camposKey:0951-3248 1994-01-01 A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON4750, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6951]], camposKey:0021-8979 1992-07-15 INFLUENCE OF REFILLING EFFECTS ON DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS IN SE-DOPED ALXGA1-XAS525530, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6949]], camposKey:0038-1101 1992-03-01 ADMITTANCE SPECTROSCOPY IN JUNCTIONS285297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6955]], camposKey:0021-8979 1991-04-15 CHARACTERIZATION OF THE DX CENTERS IN ALGAAS-SI BY ADMITTANCE SPECTROSCOPY43004305, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3860]], camposKey:0021-8979 1990-12-01 Characterization of the EL2 center in GaAs by optical admittance spectroscopy63096314, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6950]], camposKey:0038-1101 1989-01-01 Constant-capacitance deep-level optical spectroscopy287293, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6957]], camposKey:0038-1101 1986-01-01 Electron thermal emission rates of nickel centers in silicon883884][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=30358]},camposKey: 0 0 Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux 16654671772022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) 1 2022-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28731]},camposKey: 0 0 The role of defects in solar cells: Control and detection defects in solar cells 14673466672013 Spanish Conference on Electron Devices 1 2013-02-12 Universidad de Valladolid , CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1859]},camposKey: 313 316 Deep level defects on mono-like and polycrystalline silicon solar cells 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1865]},camposKey: 285 288 Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1857]},camposKey: 349 352 Photocurrent measurements for solar cells characterization 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28728]},camposKey: 0 0 Photocurrent measurements for solar cells characterization 97814673466652013 Spanish Conference on Electron Devices (CDE 2013) 1 2013-01-01 Institute of Electrical and Electronics Engineers (IEEE ), CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1858]},camposKey: 301 304 The role of defects in solar cells: Control and detection Defects in solar cells 978-1-4673-4784-62012 International Symposium on Telecommunication Technologies (ISTT) 26-28 Nov. 2012, Kuala Lumpur, Malaysia 1 2013-01-01 Piscataway, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21519]},camposKey: Electrical Characterization of High-K Dielectric Gates for Microelectronic Devices 9789535107644Dielectric Material 1 2012-01-01 IntechOpen, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21688]},camposKey: A study of tunneling assisted charge exchange on the inner interface of high-k dielectrics s tacks 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21687]},camposKey: Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1864]},camposKey: 349 359 Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics 978-1-56677-903-6- 1 2011-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21689]},camposKey: Negative-resistance effect in Al2O3 based and nanolaminated MIS structures 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32666]},camposKey: 1 4 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32669]},camposKey: 223 226 Electrical characterization of high-k based MIS capacitors using flat-band voltage transients 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32667]},camposKey: 227 230 Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32668]},camposKey: 8 11 Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2061]},camposKey: 287 298 Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment 1402043651Defects in HIgh-k Gate Dielectric Stacks 1 2006-01-27 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2063]},camposKey: 29 32 A comparative study of atomic layer deposited advanced high-k dielectrics 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2064]},camposKey: 45 48 Electrical characterization of atomic-layer-depo sited hafnium silicate for alternative gate dielectric application 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21523]},camposKey: Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application 0-7803-88 10-0Spanish Conference on Electron Devices = 5ª Conferencia de Dispositivos Electronicos (Tarragona, 2005) 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2065]},camposKey: 49 52 Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon 978-0-7803-8810-92005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21522]},camposKey: Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon 0-7803-88 10-0Spanish Conference on Electron Devices = 5ª Conferencia de Dispositivos Electronicos (Tarragona, 2005) 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1860]},camposKey: 83 87 Conductance transient comparative analysis of ECR-PECVD deposited SiNx,SiO2/SiNx and SiOxN gamma dielectric films on silicon substrates 1558997245Fundamentals of novel oxide/semiconductor interfaces 1 2004-03-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1863]},camposKey: 147 152 On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2,Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films 1558997245Fundamentals of novel oxide/semiconductor interfaces 1 2004-03-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1862]},camposKey: 231 236 Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures 1558996354Electrically Based Microstructural Characterization III 1 2002-09-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1855]},camposKey: 185 190 Radio-frequency impedance analysis of anodic tantalum pentoxide thin films 1558996354Electrically Based Microstructural Characterization III 1 2002-09-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1856]},camposKey: 371 378 Fabrication of Ta2O5 thin films by anodic oxidation of tantalum nitride and tantalum silicide: Growing mechanisms, electrical characterization and ULSI M-I-M capacitor performances 1558994742Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: 1 1999-09-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=1861]},camposKey: 87 92 Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures 155899405XElectrically Based Microstructural Characterization II: 1 1998-11-09 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14673]},camposKey: 121 126 Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT) 978-0-7503-0372-9 Defect Recognition and Image Processing in Semiconductors 1995: Proceedings of the Sixth International Conference held in Boulder, Colorado, 3-6 December 1995 1 1996-01-01 Taylor & Francis, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14745]},camposKey: 47 50 A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON 0-7503-0294-1Defect Recognition and Image Processing in Semiconductors and Devices 1 1994-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=24859]},camposKey: 41 42 Caracterización del centro EL2 del GaAs por espectroscopia óptica de la admitancia ISBN-0853XXI Reunión bienal de la Real Sociedad española de Física programa, Salamanca 4 al 10 de octubre, 1987 1 1987-01-01 Real Sociedad Española de Fisica][][Llibres{id=com.sigma.fs3.argos.domain.gpc.GpcLlibresPK[ifcactivitat=LLI, ifccomptador=117174],camposKey=978-1-7281-1044-8Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices 1 2020-01-01 IEEE}][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=64578]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63163]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63374]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=64578]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63163]], com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63374]]][][][com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=30828]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=30746]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145639706]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=2145630375]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=69397]], com.sigma.fs3.argos.domain.gpc.GpcTesis[id=com.sigma.fs3.argos.domain.gpc.GpcTesisPK[ifcactivitat=TES, ifccomptador=69398]]][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@67247373, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@17b45878, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@86d2daf, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6b56b42f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2fadeddd, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1a6f07c8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7b8e417f, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@25a775ed, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6524a781, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@797adaa, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@e1b919e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@108d85ad, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@50552092, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6a152dcf, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3850c672, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@440c8c38, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3da4759b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7e9c5cb5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@40416642, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@608c5f3e, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7e9af619, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@627f748b, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@29c76df0, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2bb0b259, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@233a308, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1bf144e9][][com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@62d178, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@62cf82, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@62d0e7, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@37316e, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@373a99, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@62d81d, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@62d291, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@62d26f, com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ConvenisPPC@373df3][][][][][][com.sigma.fs3.argos.domain.gpc.GpcPatents[id=com.sigma.fs3.argos.domain.gpc.GpcPatentsPK[ifcactivitat=PAT, ifccomptador=1141]]][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@5bc572], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f93f], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f744], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ee3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41258c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412f0e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@460872], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4604ba], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411e1e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411c29], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@411cf2], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f463], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@4134c8], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41347e]][][CatedrasConvenios{id=15, codigoPersona=com.sigma.fs3.argos.domain.gpc.PersonalGPC[ifcidPers=12674], codigoTipo=CAT, codigoContable=null, titulo=CÁTEDRA TELEFÓNICA DE TECNOLOGÍAS MÓVILES APLICADAS A LA EDUCACIÓN
, fechaInicio=2011-05-17, fechaFin=null, importe=45000.0, visiblePortal=1, visibleCvn=1, visibleMemoria=1, validado=S}][][][][][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=25951]},camposKey: 74 77 Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes 978166544452113th Spanish Conference on Electron Devices, CDE 2021 1 2021-01-01 IEEE]