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DUEÑAS CARAZO, SALVADOR

[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81893]], camposKey:1369-8001 2024-01-01 A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81892]], camposKey:0167-577X 2024-01-01 Impact of the temperature on the conductive filament morphology in HfO2-based RRAM00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=86533]], camposKey:2079-9292 2024-01-01 On the Asymmetry of Resistive Switching Transitions00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=86532]], camposKey:1369-8001 2024-01-01 Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate 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camposKey:0957-4484 2021-08-13 Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=71432]], camposKey:2574-0970 2021-05-28 Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media51525163, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=65132]], camposKey:0038-1101 2021-01-01 Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=67164]], camposKey:2079-9292 2021-01-01 Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices28160, 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camposKey:0267-0836 1995-01-01 Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors10741078, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3857]], camposKey:0268-1242 1994-12-01 Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique16371648, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=40608]], camposKey:0951-3248 1994-01-01 A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON4750, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6951]], camposKey:0021-8979 1992-07-15 INFLUENCE OF REFILLING EFFECTS ON DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS IN SE-DOPED ALXGA1-XAS525530, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6949]], camposKey:0038-1101 1992-03-01 ADMITTANCE SPECTROSCOPY IN JUNCTIONS285297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6955]], camposKey:0021-8979 1991-04-15 CHARACTERIZATION OF THE DX CENTERS IN ALGAAS-SI BY ADMITTANCE SPECTROSCOPY43004305, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3860]], camposKey:0021-8979 1990-12-01 Characterization of the EL2 center in GaAs by optical admittance spectroscopy63096314, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6950]], camposKey:0038-1101 1989-01-01 Constant-capacitance deep-level optical spectroscopy287293, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6959]], camposKey:0021-8979 1987-01-01 Optical admittance spectroscopy: A new method for deep level characterization25412545, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6957]], camposKey:0038-1101 1986-01-01 Electron thermal emission rates of nickel centers in silicon883884][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=30358]},camposKey: 0 0 Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux 16654671772022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) 1 2022-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28731]},camposKey: 0 0 The role of defects in solar cells: Control and detection defects in solar cells 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Maldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A., García, H.; González, M. B.; Jiménez-Molinos, F.; Campabadal, F.; Miranda, E.; Dueñas, S.; Castán, H.; Roldán, J.B. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2024; 169: num: 107878

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García, Héctor; Ossorio, Óscar G.; Dueñas, Salvador; Castán, Helena. Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices. IEEE; 2020
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Al Chawa M.M.; De Benito C.; Castan H.; Duenas S.; Stavrinides S.G.; Tetzlaff R.; Picos R. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux . En: -. 2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST). -; 2022. p. 0-0

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Cruz Gonzalez C.S.; Sahelices B.; Jimenez J.; Ossorio O.G.; Castan H.; Gonzalez M.B.; Vinuesa G.; Duenas S.;Campabadal F.; Garcia H. (2021). Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes. En -. 13th Spanish Conference on Electron Devices, CDE 2021. 1 ed. IEEE; 2021. p. 74-77
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CARACTERIZACIÓN ELÉCTRICA AVANZADA DE DISPOSITIVOS MEMRISTIVOS. Equipo Investigadores: CASTAN LANASPA, MARÍA HELENA (IP); DUEÑAS CARAZO, SALVADOR (IP); GARCIA GARCIA, HECTOR. Equipo de Trabajo: GARCIA OCHOA, EDUARDO; GONZALEZ OSSORIO, OSCAR; VINUESA SANZ, GUILLERMO; TAMM ,, AILE; KALAM ., KRISTJAN; KUKLI ., KAUPO. Personal Contratado: DEL VAL DE LA FUENTE, TERESA. PID2022-139586NB-C43. Entidades colaboradoras AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS (CSIC), UNIVERSIDAD DE GRANADA, UNIVERSIDAD AUTONOMA DE BARCELONA . Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: AGENCIA ESTATAL DE INVESTIGACIÓN, FONDOS FEDER, UNION EUROPEA, MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/09/2023-31/08/2026

FEDERUnión EuropeaMnisterio de Ciencia e InnovaciónAEI
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Convenios/Contratos OTC (9)

El Sector del Comercio en Castilla y León.. Equipo Investigadores: SALVADOR INSUA, JOSE ANTONIO (IP); GONZALEZ OSSORIO, OSCAR; DUEÑAS CARAZO, SALVADOR; S PHABMIXAY S PHABMIXAY, CHANTHALY; TEMPRANO GARCIA, VICTOR; INGELMO PALOMARES, MARTA MARIA; SAHELICES FERNÁNDEZ, BENJAMÍN; BEDATE CENTENO, ANA MARIA. Entidades Participantes: FUNDACION GENERAL DE LA UNIVERSIDAD DE VALLADOLID.. Entidades Financiadoras: CONSEJO ECONOMICO Y SOCIAL CASTILLA LEON.. 13/06/2022

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Otras ayudas y becas (3)

CONTRATO INVESTIGO JCYL: MEDIDAS EXPERIMENTALES DE CARACTERIZACIÓN ELÉCTRICA PARA EL DESARROLLO DE CÉLULAS SOLARES. DUEÑAS CARAZO, SALVADOR (Director). CARRO ARDILA, YUMAR (Beneficiario). 18/12/2023 - 17/12/2024. 33.108,92 EUR.

Next Generation-UEMINISTERIO DE TRABAJO Y ECONOMÍA SOCIALPlan de Recuperación, transformación y ResilienciaSERVICIO PUBLICO ESTATAL DE EMPLEO (SEPE)SERVICIO PUBLICO DE EMPLEO DE CASTILLA Y LEON (ECYL)
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OTROS

Tesis doctorales (6)


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Congresos (54)

2022 11th International Conference on Modern Circuits and Systems Technologies, MOCAST 2022, Bremen 08/06/2022 - 10/06/2022
(Ponencia). Al Chawa M.M.; De Benito C.; Castan H.; Duenas S.; Stavrinides S.G.; Tetzlaff R.; Picos R. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux
(Ponencia). Al Chawa M.M.; De Benito C.; Castan H.; Duenas S.; Stavrinides S.G.; Tetzlaff R.; Picos R. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux
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Patentes (1)

Salvador Dueñas. Sistema de Energía Solar. P-201130646/PCT/ES2012/070279. 2011.
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Cátedras (1)

CÁTEDRA TELEFÓNICA DE TECNOLOGÍAS MÓVILES APLICADAS A LA EDUCACIÓN. Comisión Mixta Seguimiento: BAEYENS LAZARO, ENRIQUE (Director); DUEÑAS CARAZO, SALVADOR (Director). Entidades Participantes: TELEFÓNICA, S.A.. 17/05/2011
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