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[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=63266]], camposKey:1852-4249 2018-01-01 Smartphones on the air track. Examples and difficulties00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3803]], camposKey:2166-2746 2013-01-01 Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3805]], camposKey:0038-1101 2013-01-01 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics6574, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3806]], camposKey:0040-6090 2011-01-31 Electrical characterization of high-pressure reactive sputtered ScO x films on silicon22682272, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3808]], camposKey:2166-2746 2011-01-01 Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3807]], camposKey:2166-2746 2011-01-01 Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3809]], camposKey:2166-2746 2011-01-01 Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3810]], camposKey:0021-8979 2010-06-01 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=81494]], camposKey:0022-2720 2010-01-01 Analysis of damaged region of carbon implanted alumina359363, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6964]], camposKey:1938-5862 2010-01-01 Electrical characterization of high-pressure reactive sputtered Sc2O3 films on silicon287297, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3811]], camposKey:0167-9317 2009-07-01 Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors16891691, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3812]], camposKey:1071-1023 2009-02-19 Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics416420, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3813]], camposKey:1071-1023 2009-02-17 Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors389393, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3814]], camposKey:0021-8979 2008-11-25 Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3815]], camposKey:0013-4651 2008-10-01 Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3818]], camposKey:0268-1242 2007-12-01 Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics13441351, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=11945]], camposKey:0272-9172 2007-12-01 Study of atomic layer deposited gadolinium oxide thin films on silicon133138, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=3819]], camposKey:0013-4651 2007-08-31 Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics00][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=28726]},camposKey: 587 588 Aprendizaje Cooperativo y Co-Evaluación en el aula de ingeniería.: Caso práctico. Mecánica para Máquinas y Mecanismos. 978-84-608-7349-5Proyectos de Innovación Docente de la Universidad de Valladolid (UVa): de los años 2013-2014 y 2014-2015 1 2015-01-01 Universidad de Valladolid. Área de Formación Permanente e Innovación Docente, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21688]},camposKey: A study of tunneling assisted charge exchange on the inner interface of high-k dielectrics s tacks 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21687]},camposKey: Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21689]},camposKey: Negative-resistance effect in Al2O3 based and nanolaminated MIS structures 978-1-4244-7865-12011 Spanish Conference on Electron Devices Proceedings 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32666]},camposKey: 1 4 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32669]},camposKey: 223 226 Electrical characterization of high-k based MIS capacitors using flat-band voltage transients 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32667]},camposKey: 227 230 Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=32668]},camposKey: 8 11 Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors 1424428394Proceedings of the 2009 Spanish Conference on Electron Devices, CDE 09 1 2009-01-01 -][][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63374]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=63374]]][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7cd54121, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@71a013ab, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@2f9dc929][][][][][][][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ee3], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41258c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412f0e]][][][][][][com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@17014, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@16d61, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15c6f, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15768, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@15282, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@1526d, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@14eac, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@14ec1, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@14363, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@13a22, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@148b2, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@13851, com.sigma.fs3.argos.domain.gpc.altres.ProjecteInnovacio@143b9][]

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Artículos de revista (18)

GONZALEZ REBOLLO, MIGUEL ANGEL. Smartphones on the air track. Examples and difficulties . PAPERS IN PHYSICS 2018; 10.

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Capítulos de libros (8)

Gomez Bravo, Alfonso. Aprendizaje Cooperativo y Co-Evaluación en el aula de ingeniería.: Caso práctico. Mecánica para Máquinas y Mecanismos. . En: Cardeñoso Payo, Valentín; Corell Almuzara, Alfredo. Proyectos de Innovación Docente de la Universidad de Valladolid (UVa): de los años 2013-2014 y 2014-2015. Universidad de Valladolid. Área de Formación Permanente e Innovación Docente; 2015. p. 587-588.


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FABRICACIÓN Y CARACTERIZACIÓN DE CAPAS DE DIELÉCTRICOS DE ALTA PERMITIVIDAD DEPOSITADAS POR ALD SOBRE SISLICIO Y SOBRE GRAFENO . Equipo Investigadores: CASTAN LANASPA, MARÍA HELENA (IP); GOMEZ BRAVO, ALFONSO; GARCIA GARCIA, HECTOR; PEREZ DIEZ, EDUARDO; BAILON VEGA, LUIS ALBERTO; DUEÑAS CARAZO, SALVADOR. TEC2011-27292-C02-01. Entidades Participantes: UNIVERSIDAD DE VALLADOLID (UVa). Entidades Financiadoras: MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN . 01/01/2012-31/12/2015

Mnisterio de Ciencia e Innovación
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Otras ayudas y becas (1)

AYUDAS PIF-UVA (2+2) DE ALFONSO GÓMEZ BRAVO PARA LA REALIZACIÓN DE LA TESIS DOCTORAL. DUEÑAS CARAZO, SALVADOR (Director). GOMEZ BRAVO, ALFONSO (Beneficiario). 12/09/2008 - 30/09/2008. 633,33 EUR.

Banco SantanderUniversidad de Valladolid
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Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 08/02/2011 - 11/02/2011
(Ponencia). Aboy M.; Santos I.; Pelaz L.; Marques L.; Lopez P. Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Proyectos de innovación docente (13)

Flipped Learning, Gamificación y BYOD dentro de la enseñanza científico-técnica universitaria - PID2022/53. Universidad de Valladolid. 01/09/2022.
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