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LOPEZ MARTIN, PEDRO

PROFESORES TITULARES DE UNIVERSIDAD
Electricidad y Electrónica
ELECTRONICA
 
pedrol@ele.uva.es
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Índice H en Web of Science: 12
Índice H en Scopus: 13
 
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[][com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56852]], camposKey:0022-3093 2019-01-01 Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study2027, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56850]], camposKey:0168-583X 2019-01-01 On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon179183, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56851]], camposKey:1359-6454 2019-01-01 {001} loops in silicon unraveled192201, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56854]], camposKey:0361-5235 2018-01-01 Identification of 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technique00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=600]], camposKey:1369-8001 2017-01-01 Improved physical models for advanced silicon device processing6279, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=6420]], camposKey:0031-9007 2017-01-01 Ultrafast Generation of Unconventional {001 } Loops in Si00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=631]], camposKey:1946-1569 2016-01-01 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion3537, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=596]], camposKey:0022-3727 2016-01-01 Insights on the atomistic 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camposKey:1882-0778 2014-01-01 Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing00, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=612]], camposKey:1569-8025 2014-01-01 Modeling of defects, dopant diffusion and clustering in silicon4058, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=56910]], camposKey:1946-1569 2013-01-01 Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach3336, com.sigma.fs3.argos.domain.gpc.GpcArticlesRev[id=com.sigma.fs3.argos.domain.gpc.GpcArticlesRevPK[ifcactivitat=ARE, ifccomptador=9090]], camposKey:0094-243X 2012-01-01 Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes221224, 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point defects to continuous amorphous layers.431436][CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21530]},camposKey: 1 4 ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions 2018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21531]},camposKey: 1 4 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential 2018 Spanish Conference on Electron Devices (CDE) 1 2018-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21554]},camposKey: 1 4 Atomistic process simulation for future generation nanodevices Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21552]},camposKey: 34 39 Modeling of advanced ion implantation technologies in semiconductors 11th International Workshop on Junction Technology (IWJT) 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=99]},camposKey: 176 180 Modeling of defect generation and dissolution in ion implanted semiconductors Ion Implantation Technology 2010: 18th International Conference on Ion Implantation Technology IIT 2010 1 2011-01-01 AIP, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21553]},camposKey: 1 4 Molecular implants and cold implants: Two new strategies for junction formation of future Si devices Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=21555]},camposKey: 1 4 Simulation study of ion implanted defects associated to luminescence centers in silicon Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 1 2011-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=109]},camposKey: 411 418 Atomistic Modeling of Junction Formation: Tools for Physics Understanding and Process Optimization Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009) 1 2009-01-01 IOP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=313]},camposKey: 479 483 Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices 2009 IEEE International Electron Devices Meeting (IEDM) 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=108]},camposKey: 12 15 Atomistic simulations of the effect of implant parameters on Si damage 2009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=309]},camposKey: 34 0 Carrier mobility degradation in highly B-doped junctions 2009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=101]},camposKey: 50 53 Influence of Si surface on damage generation and recombination 2009 Spanish Conference on Electron Devices 1 2009-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=97]},camposKey: 535 539 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices 2008 IEEE International Electron Devices Meeting 1 2008-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=103]},camposKey: 237 248 Atomistic Simulation Techniques in Front-End Processing Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2097]},camposKey: 279 0 F+ Implants in Crystalline Si: The Si Interstitial Contribution Doping Engineering for Front-End Processing: Symposium Held March 25-27, 2008, San Francisco, California, U.S.A. 1 2008-01-01 Materials Research Society, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=14683]},camposKey: 71 76 Physics mechanisms involved in the formation and recrystallization of amorphous regions in Si through ion irradiation Theory, Modeling and Numerical Simulation of Multi-Physics Materials Behavior 1 2008-01-01 Trans Tech Publications, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=102]},camposKey: 21 24 Atomistic simulation of damage accumulation during shallow B and As implant into Si 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=314]},camposKey: 29 32 Boron electrical activation in SOI compared to bulk si substrates 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=98]},camposKey: 17 20 Molecular dynamics modeling of octadecaborane implantation into Si Simulation of Semiconductor Processes and Devices. SISPAD 2007 1 2007-01-01 Springer, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=104]},camposKey: 44 47 Molecular dynamics simulation of octadecaborane implantation into silicon 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=105]},camposKey: 37 40 Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=110]},camposKey: 5 8 Physics based models for process optimization 2007 Spanish Conference on Electron Devices: 6a Conferencia de Dispositivos Electronicos: Proceedings 1 2007-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=2096]},camposKey: 29 32 Fluorine profile distortion upon annealing by the presence of a CVD grown boron box Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 1 2006-01-01 AIP Publishing, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=312]},camposKey: 427 430 Atomistic analysis of annealing behavior of amorphous regions 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=310]},camposKey: 431 434 Boron redistribution in pre-amorphized Si during thermal annealing. 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=311]},camposKey: 447 450 Morphology of As-implanted damage in silicon: A molecular dynamics study 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=315]},camposKey: 451 454 Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions 2005 Spanish Conference on Electron Devices 1 2005-01-01 IEEE, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=100]},camposKey: 307 312 Atomistic analysis of the role of silicon interstitials in boron cluster dissolution Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=106]},camposKey: 431 436 Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers Silicon Front-End Junction Formation - Physics and Technology 1 2004-01-01 MRS. Cambridge, CapitolsLlib{id=com.sigma.fs3.argos.domain.gpc.GpcCapitolsLlibPK[ifcactivitat=CAP, ifccomptador=308]},camposKey: 151 154 Atomistic modeling of B activation and deactivation for ultra-shallow junction formation International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2003 1 2003-01-01 IEEE][][][][][][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61294]]][com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBeca[id=com.sigma.fs3.argos.domain.gpc.GpcAltresAjutsBecaPK[ifcactivitat=AAB, ifccomptador=61294]]][][][][][][][][][][][com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7ccf24c5, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@3774187, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@a6f07d8, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7f6bfb41, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@a3ca9c2, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@14ad04ce, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6b167afc, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@10e46d51, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@4c4e981, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@1bbe1699, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@5cbda509, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@269e2170, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@57a553de, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@272540c6, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@7ebf9b3d, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@556902cd, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@61370c89, com.sigma.investigacion.cawdos.utilidades.CongresoYSusAsociaciones@6518283b][][][][][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=58771]]][com.sigma.fs3.argos.domain.gpc.EstadesFora[id=com.sigma.fs3.argos.domain.gpc.GpcEstadesForaPK[ifcactivitat=ESF, ifccomptador=58771]]][][][][com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414e54], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f933], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@414d41], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@45f73e], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413345], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@413670], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412ffc], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41250c], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@412350], com.sigma.investigacion.cawdos.entities.ayudaInvestigacion.ProjectesPPC[id=com.sigma.fs3.argos.domain.gpc.ayudasrecerca.ProjectesPPCId@41224a]][][][][]

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Artículos de revista (60)

Santos I.; Aboy M.; Marques L.A.; Lopez P.; Pelaz L. Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study . JOURNAL OF NON-CRYSTALLINE SOLIDS 2019; 503-504(0): 2-27.
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Capítulos de libros (30)

Pedro López ; M. Aboy ; I. Muñoz ; I. Santos ; L. A. Marqués ; C. Couso ; M. Ullán ; L. Pelaz. ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions. En: 2018 Spanish Conference on Electron Devices (CDE). IEEE; 2018. p. 1-4.
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AYUDA A LA INVESTIGACIÓN

Proyectos (10)

ESTUDIO DE PROCESOS TECNOLÓGICOS AVANZADOS PARA LA FABRICACIÓN DE DISPOSITIVOS ELECTRÓNICOS NANOMÉTRICOS MEDIANTE TÉCNICAS DE SIMULACIÓN PREDICTIVA. MARQUES CUESTA, LUIS ALBERTO (IP); SANTOS TEJIDO, IVAN; HERNANDEZ MANGAS, JESUS MANUEL; ARIAS ALVAREZ, JESUS; RUBIO GARCIA, JOSE EMILIANO; VICENTE ANTON, JOSE; RUIZ PRIETO, MANUEL; ENRIQUEZ GIRAUDO, MARIA LOURDES; PELAZ MONTES, MARIA LOURDES; ABOY CEBRIAN, MARIA; LOPEZ MARTIN, PEDRO; PINACHO GOMEZ, RUTH. VA119G18. UNIVERSIDAD DE VALLADOLID, JUNTA DE CASTILLA Y LEÓN -CONSEJERÍA DE EDUCACIÓN 2018-2020
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Otras ayudas y becas (1)

CONTRATO DE GARANTIA JUVENIL JCYL TIPO B (TITULADO) DE FERNANDO MANSO SAN ISIDRO: - El diseño de simulaciones por ordenador para el estudio de materiales y procesos de interés en Nanoelectrónica.- La implementación de nuevos modelos para describir fenómenos físicos y la adaptación de los códigos de simulación existentes. - La ejecución y monitorización de las simulaciones de forma local o en un servidor de cálculo.- El análisis de la información obtenida de las simulaciones, que en la mayoría de los casos implica una cantidad ingente de datos. Para la gestión de esta información masiva se h. LOPEZ MARTIN, PEDRO (Director). MANSO SAN ISIDRO, FERNANDO (Beneficiario). 03/02/2021 - 01/12/2022. 37.000,00 EUR.
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OTROS

Congresos (18)

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018, Salamanca 14/11/2018 - 16/11/2018
(Ponencia). Martin L.; Santos I.; Lopez P.; Marques L.; Aboy M.; Pelaz L. Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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Estancias de investigación (1)

AYUDAS UVA A LA INVESTIGACION: ESTANCIA DE INVESTIGACION. 21/09/2006 - 19/11/2006
     PHILIPS RESEARCH LEUVEN. LEUVEN ( BÉLGICA )
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